• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.589-594
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• 2009

We have studied electro-optic characteristics as a function of passivation thickness existing between common electrode and pixel electrodes in the fringe-field switching (FFS) mode using the LC with positive dielectric anisotropy. A steep increase in the transmission is observed with increase in the passivation layer from $0.29{\mu}m$ to $1.09{\mu}m$ and thereafter it almost saturates over the $1.09{\mu}m$ of passivation layer. This saturation is mainly associated with correlation between transmittance at the center region of pixel electrode and at the center region between pixel electrodes. From the results, optimal thickness of passivation layer can be defined.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.859-862
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• 2008

We present a new tool to measure precisely the emissive properties of displays at the pixel level with submicrometric spatial resolution. It is useful to check the technological defects and their impact on the emissive properties of the displays. Backlight films and transflective and reflective displays are measured.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.873-877
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• 2005

Recent developments in Dual Select Diode (DSD) AMLCD technology are described. They include a novel array design and drive method with shared select lines, which leads to higher aperture ratio and a further reduction of module cost. A Color-On-Array DSD process and pixel layout compatible with In-Plane-Switching is also proposed.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.936-939
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• 2005

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.203-204
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• 2000

We have developed 14.1" XGA transflective panel for both transmissive mode and reflective mode. We designed new panel structure, optimized optical films and adopted pixel with high aperture and high transmittance color filter. This can be applied for mobile tool and sub-note without regard to environment.

• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.140-141
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• 2005

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.1-5
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• 2009

A new pixel circuit for Active Matrix Organic Light Emitting Diodes (AMOLEDs), based on the polycrystalline silicon thin film transistors (Poly-Si TFTs), was proposed and verified by SMART SPICE simulation. One driving and six switching TFTs and one storage capacitor were used to improve display image uniformity without any additional control signal line. The proposed pixel circuit compensates an inevitable threshold voltage variation of Poly-Si TFTs and also compensates the degradation of OLED at low power supply voltage($V_{DD}$). The simulation results show that the proposed pixel circuit successfully compensates the variation of OLED driving current within 0.8% compared with 20% of the conventional pixel circuit.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.3
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• pp.279-284
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• 2014

This paper proposes a novel OLED pixel circuit to compensate the threshold voltage variation of p-channel low temperature polycrystalline silicon thin-film transistors (LTPS TFTs). The proposed 5-TFT OLED pixel circuit consists of 4 switching TFTs, 1 OLED driving TFT and 1 capacitor. One frame of the proposed pixel circuit is divided into initialization period, threshold voltage sensing and data programming period, data holding period and emission period. SmartSpice simulation results show that the maximum error rate of OLED current is -4.06% when the threshold voltage of driving TFT varies by ${\pm}0.25V$ and that of OLED current is 9.74% when the threshold voltage of driving TFT varies by ${\pm}0.50V$. Thus, the proposed 5T1C pixel circuit can realize uniform OLED current with high immunity to the threshold voltage variation of p-channel poly-Si TFT.

• Journal of Sensor Science and Technology
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• v.21 no.6
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• pp.413-419
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• 2012

A dynamic range extension technique is proposed based on a 3-transistor active pixel sensor (APS) with gate/body-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector using a feedback structure. The new APS consists of a pseudo 3-transistor APS and an additional gate/body-tied PMOSFET-type photodetector, and to extend the dynamic range, an NMOSFET switch is proposed. An additional detector and an NMOSFET switch are integrated into the APS to provide negative feedback. The proposed APS and pseudo 3-transistor APS were designed and fabricated using a $0.35-{\mu}m$ 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) process. Afterwards, their optical responses were measured and characterized. Although the proposed pixel size increased in comparison with the pseudo 3-transistor APS, the proposed pixel had a significantly extended dynamic range of 98 dB compared to a pseudo 3-transistor APS, which had a dynamic range of 28 dB. We present a proposed pixel that can be switched between two operating modes depending on the transfer gate voltage. The proposed pixel can be switched between two operating modes depending on the transfer gate voltage: normal mode and WDR mode. We also present an imaging system using the proposed APS.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.1291-1296
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• 2005

In this paper, we prevent a display quality drop for image of characteristics brightness ununiformity depend on LED use to LED vision. It is about that method also a control system development equipped with brightness compensation function of LED vision which is done easily for LED set up of LED vision. Generally, It is calculate driving current value is attended by each brightness to brightness characteristics mathematical function establish by "Y=aX+b", When is doing brightness value for "Y", driving current value for "X", brightness compensation value by using time for "b", characteristics value for "a" ground with characteristics curve of LED. So much, First It is create brightness data of each pixel take a photograph red, green and blue of LED vision. Second It is get average error about each pixel which get average brightness value of entire. Last, It is handle a complicated for about gradationally regulation to color and brightness of image send to LED vision. Also It raise the whole average brightness value of vision adjust for "b" value to solve brightness drop problem of LED using the long time.