Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electro-Optic Characteristics of the Fringe Field Switching (FFS) Mode Depending on Thickness of Passivation Layer between Pixel and Common Electrodes

FFS 모드의 공통전극과 화소전극 사이의 절연층 두께에 따른 전기광학 특성

  • 정준호 (전북대학교 고분자.나노공학과) ;
  • 하경수 (전북대학교 고분자.나노공학과) ;
  • 임영진 (전북대학교 고분자.나노공학과) ;
  • 유일수 (전북대학교 고분자.나노공학과) ;
  • 정연학 (삼성전자 LCD총괄) ;
  • 유재진 (삼성전자 LCD총괄) ;
  • 김경현 (삼성전자 LCD총괄) ;
  • 이승희 (전북대학교 고분자.나노공학과)
  • Published : 2009.07.01
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Abstract

We have studied electro-optic characteristics as a function of passivation thickness existing between common electrode and pixel electrodes in the fringe-field switching (FFS) mode using the LC with positive dielectric anisotropy. A steep increase in the transmission is observed with increase in the passivation layer from $0.29{\mu}m$ to $1.09{\mu}m$ and thereafter it almost saturates over the $1.09{\mu}m$ of passivation layer. This saturation is mainly associated with correlation between transmittance at the center region of pixel electrode and at the center region between pixel electrodes. From the results, optimal thickness of passivation layer can be defined.

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References

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