• Proceedings of the KSME Conference
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• 2001.06a
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• pp.298-303
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• 2001

The critical thickness of an epitaxial film on a substrate in electronic or optoelectronic devices is studied on the basis of equilibrium dislocation analysis. Two geometric models, a single dislocation and an array of dislocations in heteroepitaxial system, are considered respectively to calculate the misfit dislocation formation energy. The isotropic linearly elastic stress fields for the models are obtained by means of complex potential method combined with alternating technique, and are used for calculating the formation energies. As a result, the effect of elastic mismatch between film and substrate on critical thickness is presented and $Si_xGe_{1-x}/Si$ epitaxial structure is analyzed to predict the critical thickness with varying germanium concentration.

• Transactions of Materials Processing
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• v.10 no.6
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• pp.449-456
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• 2001

The concept of stress wave was introduced through the quantized kinetic energy which is related to the potentional energy change of atom, molecular bond energy. Differentiated molecular bond energy $\varphi$() by the lst order displacement u becomes force F(F = d$\varphi$($u_i$)/du), if resversely stated, causing physically atomic displacement $u_i$. Such physical phenomena lead stress(force/area of applied force) can be expressed by wave equation of linearly quantized physical property. Through the stress wave concept, formation of dislocation, which could not explained easily from a theory of continuum mechanics, can be explained. Moreover, this linearly quantized stress wave equation with a stress concept for grains in a crystalline solid was applied to three typical metallic microstructures and a simple shape. The result appears to be a product from well treated equations of a quantized stress wave. From this result, it can be expected to answer the reason why the defect free and very fine diameters of long crystalline shapes exhibit ideal tensile strength of materials.

• Nuclear Engineering and Technology
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• v.53 no.7
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• pp.2304-2311
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• 2021

The dislocation density in strain-hardened Alloy 690 was analyzed using scanning transmission electron microscopy (STEM) to study the relationship between the local plastic strain and susceptibility to primary water stress corrosion cracking (PWSCC) in nuclear power plants. The test material was cold-rolled at various thickness reduction ratios from 10% to 40% to simulate the strain-hardening condition of plant components. The dislocation densities were measured at grain boundaries (GB) and in grain interiors of strain-hardened specimens from STEM images. The dislocation density in the grain interior monotonically increased as the strain-hardening proceeded, while the dislocation density at the GB increased with strain-hardening up to 20% but slightly decreases upon further deformation to 40%. The decreased dislocation density at the GB was attributed to the formation of deformation twins. After the PWSCC growth test of strain-hardened Alloy 690, the fraction of intergranular (IG) fracture was obtained from fractography. In contrast to the change in the dislocation density with strain-hardening, the fraction of IG fracture increased remarkably when strain-hardened over 20%. From the results, it was suggested that the PWSCC growth behavior of strain-hardened Alloy 690 not only depends on the dislocation density, but also on the microstructural defects at the GB.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.358-364
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• 1998

Retrograde well is a new process for ULSI fabrication. High energy ion implantation has been used for retrograde well formation. In this paper the forming condition for retrograde well using high energy ion implantation is compared with that for conventional well. TW signals for retrograde p-,n-well($900^{\circ}C$),after annealing are similar trends to those of conventional ones($1150^{\circ}C$), however the signals for RTA have the highest value because of small thermal budget. Junction depths of retrograde well are varied from about 1.2 to $3.0\{mu}m$ as for conventional well. The peak concentrations of retrograde well, however, are about 10 times higher in values than those of conventional ones so that they can be used as any types of potential barriers or gettering sites. The critical dose for phosphorus implantation in our experiments is between $3\times10^{13} and 1\times10^{14}/cm^2$. Under the above critical dose, there are many secondary defects near projected range such as dislocation lines and dislocation loops.

• Nuclear Engineering and Technology
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• v.54 no.3
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• pp.991-996
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• 2022

Microstructures of monolithic high purity SiC and SiC with sintering additives after neutron irradiation to a fluence of 2.0-2.5 × 10²⁴ n/m² (E > 0.1 MeV) at 333-363 K and after post-irradiation annealing up to 1673 K were observed using a transmission electron microscopy. Results showed that no black spot defects or dislocation loops in SiC grains were found after the neutron irradiation for all of the specimens owing to the moderate fluence at low irradiation temperature. Thus, it is confirmed that these specimens were swelled mostly by the formation of point defects. Black spots and small dislocation loops were discovered only after the annealing process in PureBeta-SiC and CVD-SiC, where the swelling almost diminished. Anomalous-shaped YAG grains were found in SiC ceramics containing sintering additives. These grains contained dense black spots defects and might lose crystallinity after the neutron irradiation, while these defects may annihilate by recrystallization during annealing up to 1673 K. Amorphous grain boundary phase was also presented in this ceramic, and a large part of it was crystallized through post-irradiation annealing and could affect their recovery behavior.

• Journal of Powder Materials
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• v.30 no.5
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• pp.431-435
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• 2023

An irradiation hardening of Inconel 718 produced by selective laser melting (SLM) was studied based on the microstructural observation and mechanical behavior. Ion irradiation for emulating neutron irradiation has been proposed owing to advantages such as low radiation emission and short experimental periods. To prevent softening caused by the dissolution of γ' and γ" precipitates due to irradiation, only solution annealing (SA) was performed. SLM SA Inconel 718 specimen was ion irradiated to demonstrate the difference in microstructure and mechanical properties between the irradiated and non-irradiated specimens. After exposing specimens to Fe³⁺ ions irradiation up to 100 dpa (displacement per atom) at an ambient temperature, the hardness of irradiated specimens was measured by nano-indentation as a function of depth. The depth distribution profile of Fe³⁺ and dpa were calculated by the Monte Carlo SRIM (Stopping and Range of Ions in Matter)-2013 code under the assumption of the displacement threshold energy of 40 eV. A transmission electron microscope was utilized to observe the formation of irradiation defects such as dislocation loops. This study reveals that the Frank partial dislocation loops induce irradiation hardening of SLM SA Inconel 718 specimens.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.428-429
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• 2011

Recently, we performed ab initio total energy calculation and tight-binding molecular dynamics (TBMD) simulation to study structures and the reconstruction of native defects in graphene. In the previous study, we predicted by TBMD simulation that a double vacancy in graphene is reconstructed into a 555-777 composed of triple pentagons and triple heptagons [1]. The structural change from pentagon-octagon-pentagon (5-8-5) to 555-777 has been confirmed by recent experiments [2,3] and the detail of the reconstruction process is carefully studied by ab initio calculation. Pentagon-heptagon (5-7) pairs are also found to play an important role in the reconstruction of vacancy in graphene and single wall carbon nanotube [4]. In the TBMD simulation of graphene nanoribbon (GNR), we found the evaporation of carbon atoms from both the zigzag and armchair edges is preceded by the formation of heptagon rings, which serve as a gateway for carbon atoms to escape. In the simulation for a GNR armchair-zigzag-armchair junction, carbon atoms are evaporated row-by-row from the outermost row of the zigzag edge [5], which is in excellent agreement with recent experiments [2, 6]. We also present the recent results on the formation and development of dislocation in graphene. It is found that the coalescence of 5-7 pairs with vacancy defects develops dislocation in graphene and induces the separation of two 5-7 pairs. Our TBMD simulations also show that adatoms are ejected and evaporated from graphene surface due to large strain around 5-7 pairs. It is observed that an adatom wanders on the graphene surface and helps non-hexagonal rings change into stable hexagonal rings before its evaporation.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.167-172
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• 2016

The high temperature deformation behavior of $Ni_3Al$ and $Ni_3(Al,Mo)$ single crystals that were oriented near <112> was investigated at low strain rates in the temperature range above the flow stress peak temperature. Three types of behavior were found under the present experimental conditions. In the relatively high strain rate region, the strain rate dependence of the flow stress is small, and the deformation may be controlled by the dislocation glide mainly on the {001} slip plane in both crystals. At low strain rates, the octahedral glide is still active in $Ni_3Al$ above the peak temperature, but the active slip system in $Ni_3(Al,Mo)$ changes from octahedral glide to cube glide at the peak temperature. These results suggest that the deformation rate controlling mechanism of $Ni_3Al$ is viscous glide of dislocations by the <110>{111} slip, whereas that of $Ni_3(Al,Mo)$ is a recovery process of dislocation climb in the substructures formed by the <110>{001} slip. The results of TEM observation show that the characteristics of dislocation structures are uniform distribution in $Ni_3Al$ and subboundary formation in $Ni_3(Al,Mo)$. Activation energies for deformation in $Ni_3Al$ and $Ni_3(Al,Mo)$ were obtained in the low strain rate region. The values of the activation energy are 360 kJ/mol for $Ni_3Al$ and 300 kJ/mol for $Ni_3(Al,Mo)$.

• Laser Solutions
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• v.14 no.4
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• pp.14-20
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• 2011

The advantage of using lasers for through silicon via (TSV) drilling is that they allow higher flexibility during manufacturing because vacuums, lithography, and masks are not required; furthermore, the lasers can be applied to metal and dielectric layers other than silicon. However, conventional nanosecond lasers have disadvantages including that they can cause heat affection around the target area. In contrast, the use of a picosecond laser enables the precise generation of TSVs with a smaller heat affected zone. In this study, a comparison of the thermal and crystallographic defect around laser-drilled holes when using a picosecond laser beam with varing a fluence and repetition rate was conducted. Notably, the higher fluence and repetition rate picosecond laser process increased the experimentally recast layer, surface debris, and dislocation around the hole better than the high fluence and repetition rate. These findings suggest that even the picosecond laser has a heat accumulation effect under high fluence and short pulse interval conditions. To eliminate these defects under the high speed process, the CDE (chemical downstream etching) process was employed and it can prove the possibility to applicate to the TSV industry.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.311-311
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• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.