• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.223.1-223.1
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• 2013

Since sapphire single crystal is one of the materials that have excellent mechanical and optical properties, the single crystal is widely used in various fields, and the demand for the use of substrate of LED devices is increasing rapidly. However, crystal defects such as dislocations and stacking faults worsen the properties of the single crystal intensely. When sapphire wafer of single crystal is used as LED substrate, especially, crystal defects have a strong influence on the characteristics of a film deposited on the wafer. In such a case quantitative assessment of the defects is essential, and the evaluation technique is now becoming one of the most important factors in commercialization of sapphire wafer. Wet etching is comparatively easy and accurate method to estimate dislocation density of single crystal because etching reaction primarily takes place where dislocations reached crystal surface which are chemically weak points, and produces etch pit. In the present study, the formation behavior of etch pits and etching time dependence were studied systematically. Etch pit density(EPD) analysis using optical microscope was also conducted and measurement uncertainty of EPD was studied to confirm the reliability of the results. EPDs and measurement uncertainties for 4 inch sapphire wafers were analyzed in terms of 5 and 21 points EPD readings. EPDs and measurement uncertainties in terms of 5 points readings for 4 inch wafers were compared by 2 organizations. We found that the average EPD value in terms of 5 points readings for a 4 inch sapphire wafer may represent the EPD value of the wafer.

• Journal of Welding and Joining
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• 제31권6호
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• pp.50-57
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• 2013

Characterization of microstructures and cryogenic mechanical properties of electro beam (EB) welds between cast and forged Inconel 718 superalloys has been investigated. Optimal EBW condition was found in the beam current range of 36~39 mA with the constant travel speed of 12 mm/s and arc voltage of 120 kV for 10 mm-thick specimens. Electron beam current lower than 25 mA caused to occur the liquation microfissuring in cast-side heat affected zone (HAZ) of EB welds. The HAZ liquation microfissure was found on the liquated grain boundaries with resolidified ${\gamma}/Laves$ and ${\gamma}/NbC$ eutectic constituents. EBW produced welds showing a fine dendritic structure with relatively discrete Laves phase due to fast cooling rate. After post weld aging treatment, blocky Laves phase and formation of ${\gamma}^{\prime}+{\gamma}^{{\prime}{\prime}}$ strengtheners were observed. Presence of primary strengthener and coarse Laves particles in PWHT weld may cause to reduce micro-plastic zone ahead of a crack, leading to a significant decrease in Charpy impact toughness at $-196^{\circ}C$. Fracture initiation and propagation induced by Charpy impact testing were discussed in terms of the dislocation structures ahead of crack arisen from the fractured Laves phase.

• 한국세라믹학회지
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• 제29권4호
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• pp.273-282
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• 1992

The effects of intrinsic and extrinsic gettering on the formation of microdefects in the wafer and on the electrical performance at near-surfaces of three different oxygen-bearing Czochralski silicon single crystal wafers were investigated by varying the combinations of the pre-heat treatments and the phosphorus diffusion through the back-surface of the wafers. The wafers which had less than 10.9 ppma of oxygen formed no gettering zones irrespective of any pre-heat treatments, while the wafers which had more than 14.1 ppma of oxygen and were treated by Low+High pre-heat treatments generated the gettering zone comprising oxygen precipitates, staking faults, and dislocation loops. The effects of extrinsic gettering by phosphorus diffusion were evident in all samples such that the minority carrier lifetimes were increased and junction leakage currents were decreased. However, the total gettering effects among the different pre-heat treatments did not necessarily correspond to the gettering structure revealed by synchrotron radiation section topograph.

• 열처리공학회지
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• 제7권4호
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• pp.277-287
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• 1994

The effect of grain size on the tensile properties and fatigue behavior of austenitic high Mn steel has been investigated. The recrystallized austenite grain size of the cold rolled high Mn steel was increased as the annealing temperature increased from $600^{\circ}C$ to $1000^{\circ}C$. Larger austenite grain size decreased the yield strength and the tensile strength, and increased the uniform elongation due to transformation of some austenite into twins or E-martensite phase during deformation. Austenite grain refinement increased the tendency to form dislocation cells, instead. The specimen annealed at $1000^{\circ}C$ with large grain size showed lower fatigue crack propagation rate in low ${\Delta}K$ region due to rougher fracture surface caused by formation of deformation twins during fatigue at the crack tip region.

• 열처리공학회지
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• 제20권6호
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• pp.306-310
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• 2007

Changes in microstructure and damping capacity with aging time for solutionized Mg-Al alloy have been investigated. Discontinuous ${\beta}\;(Mg_{17}Al_{12})$ precipitates form along the primary grain boundaries, the amount of which increases as the aging time increases. The hardness of the matrix with respect to aging time shows a typical "S" shape, indicating a generation of fine continuous precipitates in the matrix during the aging. The peak level of damping capacity is obtained after 1 hour of aging, over which the damping capacity becomes deteriorated continuously. The formation of optimum density of continuous ${\beta}$ precipitates with fine morphology which would act as pinning points for dislocation lines, might be responsible for the improvement of damping capacity.

• 대한전자공학회논문지
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• 제25권3호
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• pp.294-301
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• 1988

A study on the lattice damages and impurity depth profiles have been performed with BF2 ion implanted silicon materials. Electrical measurement, SIMS and TEM analysis techniques were used in order to identify the reverse annealing phenomena, impurity depth profiles and lattice damages. A typical reverse annealing phenomena were shown at the dose of 1x10**15/cm\ulcorner and non-reverse annealing at the dose of 5x10**15/cm\ulcorner This was explained with the formation of the amorphous region at BF2+ ion implantation with high dose. That is, the amorphous reigons were recrystallized centrated at certain regions were measured by SIMS technique. The dislocation loops-like crystalline defects were observed with TEM cross sections, which were formed at the lattice damaged region during annealing process.

• 소성∙가공
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• 제3권4호
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• pp.392-400
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• 1994

The formation of preferred orientations in the cold rolling texture of the Inconel 690 sheets was studied by the x-ray texture measurements and TEM observations. The increasing {220} pole intensity in the plane normal at the higher reductions was related to the {110}<112> texture component. The rolling texture of the Inconel 690 was the pure metal type which could be described by {112}<111>, {123}<634> and {110}<112> orientations. The dislocation cells were found in the near {110}<112> oriented grains. The onset of deformation twins in the {112}<111> oriented grains caused the weakening of {112}<111> and the development of {552}<115> in the rolling texture.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.27-31
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• 1998

The growth method using multi-crucible set is very useful for mass production of optical crystals such as CaF2, Lif, BaF2 etc. CaF2 crystals of various diameter(42, 54 and 68mm) could be grown by means of multi-crucible set in one running operation and they were investigated to the formation of grain boundary as the cone-angle of crucibles. The qualities of crystal were evaluated by observing grain number and dislocation density. The transmittance was analyzed by using UV-Visible-NIR spectrometer.

• 열처리공학회지
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• 제7권2호
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• pp.88-95
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• 1994

In order to compare mechanical properties of ausformed martensite with those of marformed martemsite in Fe-30%Ni-0.1%C alloy and to investigate their strengthening mechanisms, ausformed martensite and marformed martensite were prepared by ausforming treatment and marforming treatment respectively. The microstructures were observed and the quantities of retained austenite, hardness, yield strength, ultimate tensile strength and elongation were examined. The strength of ausformed martensite was mainly increased because of the lattice defects inherited from austenite. The ductility of ausformed martensite was constant at the rate of 7-8% by ductile matrix formation of the retained austenite in spite of the increase in strength. The strength of marformed martensite was increased by the increment in dislocation density, the crossing of transformation twin with deformation twin and the mutual crossing of deformation twin. The ductility of mar formed martensite was slightly lower than that of ausformed martensite, but the strength of mar formed martensite was prominently higher.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.311-311
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• 2013

The resistance switching memory devices have several advantages to take breakthrough for the limitation of operation speed, retention, and device scale. Especially, the metal-oxide materials such as ZnO are able to fabricate on the flexible and visible transparent plastic substrate. Also, the quantum dots (QDs) embedded in dielectric layer could be improve the ratio between the low and the high resistance becauseof their Coulomb blockade, carrier trap and induced filament path formation. In this study, we irradiated 0.2-MeV-electron beam on the ZnO/QDs/ZnO structure to control the defect and oxygen vacancy of ZnO layer. The metal-oxide QDs embedded in ZnO layer on Pt/glass substrate were fabricated for a memory device and evaluated electrical properties after 0.2-MeV-electron beam irradiations. To formation bottom electrode, the Pt layer (200 nm) was deposited on the glass substrate by direct current sputter. The ZnO layer (100 nm) was deposited by ultra-high vacuum radio frequency sputter at base pressure $1{\times}10^{-10}$ Torr. And then, the metal-oxide QDs on the ZnO layer were created by thermal annealing. Finally, the ZnO layer (100 nm) also was deposited by ultra-high vacuum sputter. Before the formation top electrode, 0.2 MeV liner accelerated electron beams with flux of $1{\times}10^{13}$ and $10^{14}$ electrons/$cm^2$ were irradiated. We will discuss the electrical properties and the physical relationships among the irradiation condition, the dislocation density and mechanism of resistive switching in the hybrid memory device.