• 제목/요약/키워드: Discharging voltage

검색결과 288건 처리시간 0.023초

저주파 플라이백 스위칭회로를 이용한 고성능 자기자극기 (A Magnetic Stimulator Adopting a Low-Frequency Fly-Back Switching Circuit)

  • 이정한;김형식;허문창;김정회
    • 대한의용생체공학회:의공학회지
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    • 제27권6호
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    • pp.343-350
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    • 2006
  • Medical magnetic stimulator generates strong magnetic field pulses. Clinical applications of the magnetic pulse are the stimulation of nervous system and the contraction of muscle. The unique source of the strong magnetic pulse is a capacitor-inductor resonator and this inductor generates a strong sinusoidal magnetic pulse by discharging the capacitor with high initial voltage. Continuous muscle contraction needs sequential generation of the magnetic pulses. However, to keep the magnitude of sequential pulses identical, an expensive high-voltage power supply have to support voltage drop of the capacitor between the pulses. A protection circuit between the supply and the resonator is necessary to protect the supply from reverse current caused by capacitor voltage reversal. In this paper, a new circuit structure of the magnetic stimulator adopting a low-frequency fly-back switching is proposed. The new circuit supports sequential pulse generation and allows the reverse current without damage. Performance of the new circuit is examined and a low-cost magnetic stimulator for urinary incontinence therapy is being developed using the presented method.

슈퍼커패시터를 이용한 도시형 철도의 가선전압 안정화 (Line Voltage Regulation of Urban Transit Systems Using Supercapacitors)

  • 손경민;최재호;김형철
    • 전력전자학회논문지
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    • 제14권6호
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    • pp.481-487
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    • 2009
  • 슈퍼커패시터를 이용하여 철도 차량의 가 감속 시에 발생하는 DC 가선전압의 변동을 안정화하는 방법을 제안하였다. 이를 위해서 슈퍼커패시터를 서로 다른 3개의 시정수를 가지는 전압가변 정전용량을 가지는 RC회로로 가정하고 실험적인 방법으로 파라미터 값을 결정하여 전기적인 모델링을 수행하였다. 슈퍼커패시터를 이용한 에너지 저장장치를 구성하여 시뮬레이션 및 실험을 통하여 제안된 모델을 검증하고 제어기를 설계하였다. 그리고, 경산 시험선에서 실증시험을 수행하고 경제성을 평가하였다.

ISG 시스템용 고효율 양방향 DC-DC 컨버터의 설계 및 자율적이며 끊김없는 모드전환을 위한 제어전략 (Design and Control Strategy for Autonomous and Seamless Mode Transition of High Efficiency Bidirectional DC-DC Converter for ISG Systems)

  • 박준성;권민호;최세완
    • 전력전자학회논문지
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    • 제21권1호
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    • pp.19-26
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    • 2016
  • In this study, a bidirectional DC-DC converter for idle stop and go (ISG) is developed to reduce fuel consumption. A three-phase non-isolated half-bridge converter is selected through a design method by considering efficiency and volume. According to the state of charge of the batteries at both the low-voltage and high-voltage sides, buck mode, which charges a low-voltage battery from the generated motor energy, and boost mode, which provides power to the motor from the low- and high-voltage battery sides, are required in the ISG system. Hence, an autonomous and seamless bidirectional control method using a variable current limiter is proposed for mode change. A 1.8 kW engineering sample of the proposed converter has been built and tested to verify the validity of the proposed concept. The maximum efficiencies, including gate driver and control circuit losses, are 96.4% in charging mode and 96.1% in discharging mode.

A Study on the Output Stabilization of the Nd:YAG Laser by the Monitoring of Capacitor Charging Voltage

  • Noh, Ki-Kyong;Song, Kum-Young;Park, Jin-Young;Hong, Jung-Hwan;Park, Sung-Joon;Kim, Hee-Je
    • KIEE International Transactions on Electrophysics and Applications
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    • 제4C권3호
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    • pp.96-100
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    • 2004
  • The Nd: YAG laser is commonly used throughout many fields such as accurate material processing, IC marking, semiconductor annealing, medical operation devices, etc., due to the fact that it has good thermal and mechanical properties and is easy to maintain. In materials processing, it is essential to vary the laser power density for specific materials. The laser power density can be mainly controlled by the current pulse width and pulse repetition rate. It is important to control the laser energy in those fields using a pulsed laser. In this paper we propose the constant-frequency current resonant half-bridge converter and monitoring of capacitor charging voltage. This laser power supply is designed and fabricated to have less switching loss, compact size, isolation with primary and secondary transformers, and detection of capacitor charging voltage. Also, the output stabilization characteristics of this Nd: YAG laser system are investigated. The test results are described as a function of laser output energy and flashlamp arc discharging constant. At the energy storage capacitor charges constant voltage, the laser output power is 2.3% error range in 600[V].

피에조 펌프 구동용 에너지 회수형 하이브리드 구동장치 고성능 운전에 관한 연구 (A Study on High Performance Operation of Hybrid Energy Recovery Drive System for Piezoelectric Pump)

  • 홍선기;이정섭;조용호;김기석;강태삼
    • 전기학회논문지
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    • 제64권10호
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    • pp.1426-1431
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    • 2015
  • Piezoelectric pump can be considered as R-C load and it needs something special driver because the output voltage does not become 0 even though the applied voltage is 0 with common converter. This operating system consists of fly-back converter to increase the input voltage and energy recovery inverter to apply square voltage to the piezoelectric pump. The energy recovery inverter can charge and discharge the energy of capacitive load. In this paper, to enhance performance of the driver, a few elements or circuits are added and modified. To drive the inverter safely, current limit resister is added and adjusted the value to valance the charging and discharging current. In addition, a current limit inductor is added to the input side to limit the input current and enhance the efficiency. Inductor only may make oscillation and another resister is added parallel to the inductor to solve this problem. The converter and inveter are assembled to one board for compactness. The appropriateness is proved with simulation and experiments.

Large Signal Determination of Non-Linear Output Capacitance of Gallium-Nitride Field Effect Transistors from Switch-Off Voltage Transients - A Numerical Method

  • Pentz, David;Joannou, Andrea
    • Journal of Power Electronics
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    • 제18권6호
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    • pp.1912-1919
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    • 2018
  • The output capacitance of power semiconductor devices is important in determining the switching losses and in the operation of some resonant converter topologies. Thus, it is important to be able to accurately determine the output capacitance of a particular device operating at elevated power levels so that the contribution of the output capacitance discharge to switch-on losses can be determined under these conditions. Power semiconductor switch manufacturers usually measure device output capacitance using small-signal methods that may be insufficient for power switching applications. This paper shows how first principle methods are applied in a novel way to obtain more relevant large signal output capacitances of Gallium-Nitride (GaN) FETs using the drain-source voltage transient during device switch-off numerically. A non-linear capacitance for an increase in voltage is determined with good correlation. Simulations are verified using experimental results from two different devices. It is shown that the large signal output capacitance as a function of the drain-source voltage is higher than the small signal values published in the data sheets for each of the devices. It can also be seen that the loss contribution of the output capacitance discharging in the channel during switch-on correlates well with other methods proposed in the literature, which confirms that the proposed method has merit.

대칭적인 스위치 구조 기반 RF 플라즈마 시스템 적용 전기적 가변 커패시터 (Electrical Variable Capacitor based on Symmetrical Switch Structure for RF Plasma System)

  • 민주화;채범석;김현배;서용석
    • 전력전자학회논문지
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    • 제24권3호
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    • pp.161-168
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    • 2019
  • This study introduces a new topology to decrease the voltage stress experienced by a 13.56 MHz electrical variable capacitor (EVC) circuit with an asymmetrical switch structure applied to the impedance matching circuit of a radio frequency (RF) plasma system. The method adopts a symmetrical switch structure instead of an asymmetrical one in each of the capacitor's leg in the EVC circuit. The proposed topology successfully reduces voltage stress in the EVC circuit due to the symmetrical charging and discharging mode. This topology can also be applied to the impedance matching circuit of a high-power and high-frequency RF etching system. The target features of the proposed circuit topology are investigated via simulation and experiment. Voltage stress on the switch of the EVC circuit is successfully reduced by more than 40%.

Electrochemical Corrosion Behavior of Iron in Lithium-ion Battery Electrolyte

  • Kim, Jineun;Lee, Suhyun;Kim, Kun Woo;Son, Jungman;Mun, Junyoung
    • Journal of Electrochemical Science and Technology
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    • 제12권4호
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    • pp.424-430
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    • 2021
  • The element iron (Fe) is affordable and abundantly available, and thus, it finds use in a wide range of applications. As regards its application in rechargeable lithium-ion batteries (LIBs), the electrochemical reactions of Fe must be clearly understood during battery charging and discharging with the LIB electrolyte. In this study, we conducted systematic electrochemical analyses under various voltage conditions to determine the voltage at which Fe corrosion begins in general lithium salts and organic solvents used in LIBs. During cyclic voltammetry (CV) experiments, we observed a large corrosion current above 4.0 V (vs. Li/Li+). When a constant voltage of 3.7 V (vs. Li/Li+), was applied, the current did not increase significantly at the beginning, similar to the CV scenario; on the other hand, at a voltage of 3.8 V (vs. Li/Li+), the current increased rapidly. The impact of this difference was visually confirmed via scanning electron microscopy and optical microscopy. Our X-ray photoelectron spectroscopy measurements showed that at 3.7 V, a thick organic solid electrolyte interphase (SEI) was formed atop a thin fluoride SEI, which means that at ≥3.8 V, the SEI cannot prevent Fe corrosion. This result confirms that Fe corrosion begins at 3.7 V, beyond which Fe is easily corrodible.

Transient trap density in thin silicon oxides

  • Kang, C.S.;Kim, D.J.;Byun, M.G.;Kim, Y.H.
    • 한국결정성장학회지
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    • 제10권6호
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    • pp.412-417
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    • 2000
  • High electric field stressed trap distributions were investigated in the thin silicon oxide of polycrystalline silicon gate metal oxide semiconductor capacitors. The transient currents associated with the off time of stressed voltage were used to measure the density and distribution of high voltage stress induced traps. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface in polycrystalline silicon gate metal oxide semiconductor devices. The stress generated trap distributions were relatively uniform the order of $10^{11}$~$10^{12}$ [states/eV/$\textrm{cm}^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}$~$10^{13}$ [states/eV/$\textrm{cm}^2$]. It was appeared that the transient current that flowed when the stress voltages were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

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MgO 증착률에 따른 PDP 보호막 물성 및 방전 특성 분석 (The Analysis of the Discharging Characteristics and MgO protective layer by MgO Evaporation Rates for High-Efficiency PDP)

  • 김용재;권상직
    • 한국진공학회지
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    • 제16권3호
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    • pp.181-186
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    • 2007
  • 본 연구에서는 플라즈마 디스플레이 패널의 방전 특성과 MgO 보호막 물성에 영향을 미치는 MgO 증착률에 대해 분석을 하였다. 물성 특성으로 결정 방향과 표면 거칠기 결정 구조 및 음극선 발광을 XRD (X-ray Diffraction), AFM (Atomic Force Microscopy), Mono-CL (Mono Cathode Luminescence analysis)등을 이용하여 측정하였고, 방전 특성으로는 방전개시전압과 방전 전류, 휘도를 진공 챔버와 오실로스코프 (TDS 540C), 전류 프로브 (TCP 312A), 휘도 색차계 (CS-100A)를 이용하여 측정하였다. 실험 결과 $5{\AA}/sec$의 증착률이 최적의 증착률임을 확인하였고, 또한 MgO의 증착률에 따라서 MgO 보호막의 물성특성이 변화하고 이에 의해서 전기적 광학적 특징이 영향을 받는 것을 확인하였다. 즉, 증착률 $5{\AA}/sec$을 기준으로 증착률이 증가할수록 (200) 결정 방향 및 음극선 발광의 밀도가 감소되고, 동작 전압은 증가하며 점차 효율이 나빠지는 경향을 보인다.