• Title/Summary/Keyword: Direct Patterning

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Micro Patterning Using Near-Field Coupled Nano Probe Laser Photo Patterning Of Chloromethylated Polyimide Thin Film (클로로메틸 폴리이미드(CMPI) 박막과 근접장 나노 프로브 레이저 패터닝을 이용한 미세 형상 가공 기술)

  • 최무진;장원석;김재구;조성학;황경현
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.10a
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    • pp.369-372
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    • 2004
  • Photo-induced surface alignment is charming as a non-contact photo-patternable alignment technology which can be used in the next generation of displays, such as large area, multi-domain. For decades, many polymer film have been investigated and developed to be used in the photo alignment. Among these photoreactive materials, recently developed polyimide, Chloromethylated Polyimide(CMPI) now became the focus of interests in this area because of its high photosensitivity and superior thermal stability. In this report, we present micro patterning method to form the nanoscale structure by Mask-Less laser patterning using this CMPI film and NSOM probe.

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Effects of lanthanum doping on ferroelectric properties of direct-patternable $Bi_{4-x}La_xTi_3O_{12}$ films prepared by photochemical metal-organic deposition

  • Park, Hyeong-Ho;Kim, Hyun-Cheol;Park, Hyung-Ho;Kim, Tae-Song
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.287-287
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    • 2007
  • The ferroelectric and electric properties of UV-irradiated bismuth lanthanum titanate (BLT) films prepared using photosensitive starting precursors were characterized. The effects of lanthanum doping on ferroelectric and electric properties were investigated by polarization-electric field hysteresis loops and leakage current-voltage measurements. X-ray diffractometer and ellipsometry were served to provide the information about the crystalline structure and thickness of the films after annealing. The images of the surface microstructure and direct-patterned BLT films were observed by using scanning electron microscopy. The effects of lanthanum doping on the electric properties of direct-pattern able BLT films and their direct-patterning were studied.

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Laser-Direct Patterning of Nanostructured Metal Thin Films (나노구조 금속 박막의 레이저 직접 패터닝에 관한 연구)

  • Shin, Hyunkwon;Lee, Hyeongjae;Yoo, Hyeonggeun;Lim, Ki-Soo;Lee, Myeongkyu
    • Korean Journal of Metals and Materials
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    • v.48 no.2
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    • pp.163-168
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    • 2010
  • We here describe the laser-direct patterning of nanostructured metal thin films. This method involves light-matter interaction in which a pulsed laser beam impinging on the film generates a thermoelastic force that plays a role to detach the film from the substrate or underlying layers. A moderate cohesion of the nanostructured film enables localized desorption of the material upon irradiation by a spatiallymodulated laser beam, giving good fidelity with the transfered pattern. This photoresist-free process provides a simple high-resolution scheme for patterning metal thin films.

Direct Growth of Patterned-Graphene Using PVP Nanowire Shadow Mask (PVP 나노와이어를 활용한 패턴된 그래핀의 직성장)

  • Eunho Lee;Daesuk Bang
    • Journal of Adhesion and Interface
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    • v.24 no.4
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    • pp.120-123
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    • 2023
  • Graphene, with its exceptional mechanical and electrical properties, has gained significant attention from researchers due to its superior characteristics compared to conventional materials. However, the application of graphene in electronic devices requires a crucial transcription and patterning process, which often introduces numerous defects, substantially impairing its properties. To overcome this limitation and unlock the full potential of graphene for commercial use, there have been various efforts to develop integrated processes for transcription and patterning. In this study, we present a novel growth method that simultaneously achieves precise patterning using polymer nanowires as masks, allowing for the direct growth of graphene. This innovative approach holds promise for realizing advanced electronic components based on nanomaterials in the future.

Laser Direct Patterning of Photoresist Layer for Halftone Dots of Gravure Printing Roll (그라비아 인쇄물의 망점 형성을 위한 포토레지스터 코팅층의 레이저 직접 페터닝)

  • Seo, Jung;Lee, Je-Hoon;Han, Yu-Hee
    • Laser Solutions
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    • v.3 no.2
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    • pp.35-43
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    • 2000
  • Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

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Gravure Halftone Dots by Laser Direct Patterning

  • Jeong Suh;Lee, Jae-Hoon
    • International Journal of Precision Engineering and Manufacturing
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    • v.3 no.1
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    • pp.26-32
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    • 2002
  • Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on the gravure printing roll. The selective laser hardening of the photoresist by Ar-ion laser(wavelength: 333.6∼363.8 nm) was controlled by the A/O modulator. The coating thickness in the range of 5∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines farmed under the laser power of 200∼260mW and irradiation time of 4.4∼6.6 $\mu$ sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line width of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

Direct Patterning of 3D Microstructures on an Opaque Substrate Using Nano-Stereolithography (나노 스테레오리소그래피 공정을 이용한 불투명 기판에서의 3차원 마이크로 형상 제작 방법에 관한 연구)

  • Son, Yong;Lim, Tae-Woo;Ha, Cheol-Woo;Yang, Dong-Yol;Jung, Byung-Je;Kong, Hong-Jin
    • Journal of the Korean Society for Precision Engineering
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    • v.27 no.10
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    • pp.93-99
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    • 2010
  • A nano-stereolithography is the direct patterning process with a nanoscale resolution using twophoton absorption induced by a femtosecond laser. However, in the majority of the works, the fabrication of 3D microstructures have been done only onto transparent glass due to the use of an oil immersion objective lens for achieving a high resolution. In this work, the coaxial illumination and the auto-focusing system are proposed for the direct patterning of nano-precision patterns on an opaque substrate such as a silicon wafer and a metal substrate. Through this work, 3D polymer structures and metallic patterns are fabricated on a silicon wafer using the developed process.

Effect of Nd:YVO4 Laser Beam Direction on Direct Patterning of Indium Tin Oxide Film

  • Ryu, Hyungseok;Lee, Dong Hyun;Kwon, Sang Jik;Cho, Eou Sik
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.3
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    • pp.72-76
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    • 2019
  • A Q-switched diode-pumped neodymium-doped yttrium vanadate (YVO4, λ =1064nm) laser was used for the direct patterning of indium tin oxide (ITO) films on glass substrate. During the laser direct patterning, the laser beam was incident on the two different directions of glass substrate and the laser ablated patterns were compared and analyzed. At a low scanning speed of laser beam, the larger laser etched lines were obtained by laser beam incident in reverse side of glass substrate. On the contrary, at a higher scanning speed, the larger etched pattern sizes were found in case of the beam incidence from front side of glass substrate. Furthermore, it was impossible to find no ablated patterns in some laser beam conditions for the laser beam from reverse side at a much higher scanning speed and repetition rate of laser beam. The laser beam is expected to be transferred and scattered through the glass substrate and the laser beam energy is thought to be also dispersed and much more influenced by the overlapping of each laser beam spot.

Hybrid Fabrication of Screen-printed Pb(Zr,Ti)O3 Thick Films Using a Sol-infiltration and Photosensitive Direct-patterning Technique (졸-침투와 감광성 직접-패턴 기술을 이용하여 스크린인쇄된 Pb(Zr,Ti)O3 후막의 하이브리드 제작)

  • Lee, J.-H.;Kim, T.S.;Park, H.-H.
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.4
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    • pp.83-89
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    • 2015
  • In this paper, we propose a fabrication technique for enhanced electrical properties of piezoelectric thick films with excellent patterning property using sol-infiltration and a direct-patterning process. To achieve the needs of high-density and direct-patterning at a low sintering temperature (< $850^{\circ}C$), a photosensitive lead zirconate titanate (PZT) solution was infiltrated into a screen-printed thick film. The direct-patterned PZT films were clearly formed on a locally screen-printed thick film, using a photomask and UV light. Because UV light is scattered in the screen-printed thick film of a porous powder-based structure, there are needs to optimize the photosensitive PZT sol infiltration process for obtaining the enhanced properties of PZT thick film. By optimizing the concentration of the photosensitive PZT sol, UV irradiation time, and solvent developing time, the hybrid films prepared with 0.35 M of PZT sol, 4 min of UV irradiation and 15 sec solvent developing time, showed a very dense with a large grain size at a low sintering temperature of $800^{\circ}C$. It also illustrated enhanced electrical properties (remnant polarization, $P_r$, and coercive field, $E_c$). The $P_r$ value was over four times higher than those of the screen-printed films. These films integrated on silicon wafer substrate could give a potential of applications in micro-sensors and -actuators.