• 한국안전학회지
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• 제16권4호
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• pp.74-81
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• 2001

A direct numerical simulation (DNS) was applied to nonpremixed counter-flow diffusion flames between oxidizer and fuel ducts. The objective of this study is to evaluate the numerical method for simulation of axisymmetric counterflow diffusion flames. Effects of computational domain size and grid size were scrutinized, and then the method was applied to air-methane diffusion flames. The results at zero gravity conditions were in good agreement with those obtained by the one-dimension flame code OPPDIF. It was confirmed thai the numerical method is applicable to the diffusion flames at the normal gravity conditions since the results clearly showed the effects of buoyancy and velocity ratio.

• 한국의류학회지
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• 제27권11호
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• pp.1300-1306
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• 2003

Cotton fibers were treated, with 1, 2, 3, 4-butanetetracarboxylic acid (BTCA) which is formaldehyde-free reagent to impart durable press performance. The dyeability, dyeing rate, and diffusion coefficient, of BTCA treated cottons were compared to prove the changes of pore size structure using direct dyes and disperse dyes. Diffusion coefficients of BTCA treated cotton fibers were determined at acidic conditions to figure out the effect of swelling. Since the dyeability of BTCA treated cotton fibers dyed with direct dyes were reduced, it is considered that the dyeability to direct dyes is related to the quantity of residual large pores. But, the dyeability to disperse dyes were increased due to the less reduction of small pore sizes and the increase of hydrophobicity in BTCA treated cotton cellulose. The dyeability to direct dye and disperse dye were decreased more at acidic conditions than at neutral conditions. It seemed that the swelling of pores in the fiber were inhibited.

• 기술혁신학회지
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• 제8권3호
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• pp.1225-1249
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• 2005

This study aims at investigating whether foreign direct investment plays a role as a channel of international technology diffusion. We used the annual panel data from 1980 to 2002. The nonstationary panel techniques, in particular group mean panel FMOLS(fully modified OLS) was exploited as an empirical methodology in order to tackle the heterogeneity between members and low frequency. The empirical results show that inflow direct investments lead to an increase in total factor productivity and economic growth. Also outflow direct investments contribute to an higher total factor productivity and economic growth. These results confirms that both inflow and outflow direct investments are important channels for international technology diffusion or spillover.

• 한국콘텐츠학회논문지
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• 제7권9호
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• pp.100-107
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• 2007

본 논문은 무선 센서 네트워크에 적용할 수 있을 정도로 단순한 효율적인 MP-DD(MultiPath-Direct Diffusion) 라우팅 방법을 제안한다. 기존의 DD(Direct Diffusion)는 하나의 최적 경로를 설정하여 사용하므로 특정 노드의 에너지가 많이 소모된다. 이에 반해 MP-DD는 네트워크 관리 노드 방향의 상위노드에 대한 정보를 가지고 다중 경로를 설정하여 사용한다. 시뮬레이션 결과 제안한 기법이 DD와 EAR(Energy Aware Routing)에 비해 망 생존성을 증가시킬 수 있음을 보여주었다.

• 한국자기공명학회논문지
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• 제12권2호
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• pp.96-102
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• 2008

Direct quantification of methanol in polymer electrolyte membrane (PEM) by solid-state nuclear magnetic resonance (NMR) spectroscopy was studied and the methanol concentrations in PEM produced by crossover and diffusion were compared. The error range of the quantification was not smaller than ${\pm}15%$ and the amount of the methanol crossed over in our direct methanol fuel cells (DMFCs) was less than the methanol diffused to PEM. The methanol concentration in the PEM of the DMFC operated at different current densities were equivalent.

• 대한기계학회논문집
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• 제16권6호
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• pp.1171-1178
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• 1992

본 연구에서는 직접접촉식 열교환기를 이용한 실험을 통하여 열교환기 설계에 가장 중요한 열교환기 단위 체적당 총괄 열전달 계수를 시스템의 작동조건에 따라 구 하여 실제 설계자료로 이용하는 데 그 목적이 있다.

• 한국기계가공학회지
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• 제19권10호
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• pp.8-15
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• 2020

The diffusion cell method is the main technique employed for the in vitro diffusion test of transdermal drug delivery preparations. Most existing transdermal diffusion devices use a water bath heating structure and direct current motor magnetic stirrer. However, these devices are confronted with problems, such as large volume, incompatible vertical and horizontal diffusion cells, few diffusion cell sets, and poor reliability. To overcome these deficiencies, the system adopts a dry heating method and uses a rotating magnetic field generated by the electromagnetic stirrer to drive the magnetic stirrer. Accordingly, the resulting device is characterized by a simple structure and small volume, convenient operation, compatible vertical and horizontal diffusion cells, and numerous diffusion cell sets. The reliability and practicability of the system is verified by the in vitro percutaneous permeability test of the bisoprolol patch.

• 대한전자공학회논문지
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• 제24권2호
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• pp.248-253
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• 1987

Boron diffusion into silicon through poly\ulcorneri-SiO2 was carried out for the diffusion with low concentration using CVD-BN. The result of direct boron diffusion from BN into silicon and that of boron diffusion through SiO2 from BN into silicon was compared with the result of boron diffusion through poly-Si-SiO2 from BN into silicon. In the case of boron diffusion through poly Si-SiO2, the low concentration diffusion was obtained, that is the boron surface concentration in silicon Cs=10**16 Cm**-3, and the glassy compounds were not seen.

• Bulletin of the Korean Chemical Society
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• 제33권3호
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• pp.1015-1019
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• 2012

The direct calculation method is generalized to the excited-state diffusion-influenced reversible reaction of a neutral and a charged particle under an external field with two different lifetimes and quenching in three dimensions. The present method provides an alternative way to calculate the binding probability density functions and the survival probabilities from the corresponding irreversible results. The solutions are obtained as the series solutions by the diagonal approximation due to the anisotropy of the unidirectional external field. The numerical results are found to be in good agreement with those of the previous study [S. Y. Reigh et al. J. Chem. Phys. 132, 164112 (2010)] within a weak field limit. The solutions of two approaches show qualitatively the same overall behavior including the power laws at long times.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.