• Journal of the Korean Magnetic Resonance Society
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• v.16 no.1
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• pp.11-21
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• 2012

The line-width of carbon nanotubes (CNTs) was studied as a function of the temperature at a frequency of 9.49 GHz in the presence of external electromagnetic radiation. The relative frequency dependence of the absorption power is obtained with the projection operator technique (POT) proposed by Kawabata. The line-width increased as the temperature increased in the high-temperature region (T>200 K). The scattering is little affected in the low-temperature region (T<200 K) because there is no correlation between the resonance field and the Fermi-Dirac distribution function. Thus, the present technique is considered to be more convenient to explain the resonant system as in the case of other optical transition problems.

• Proceedings of the Korean Society of Agricultural Engineers Conference
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• 2003.10a
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• pp.579-582
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• 2003

Water quality model applicable paddy field was developed using field experiment during $1999{\sim}2002$. This model involves inputs from fertilization and sediment release as dirac delta function and continuous source function, respectively, and can simulate various processes such as ponded depth, surface drainage, total nitrogen concentration and total phosphorus concentration in a daily basis. Water quality model for paddy field developed in this study is simply, needs little parameters, but appeared high applicability to evaluate paddy filed drainage.

• Progress in Medical Physics
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• v.9 no.1
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• pp.37-46
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• 1998

Beta-particle energy distributions of the radionuclides in medicine are calculated for the medical physics applications. The radial component solutions of Dirac wave equations are evaluated for a point-nucleus un screened Coulomb potential. The WKB method is employed to correct the screening due to the orbital-electron cloud. Fierz interference terms are ignored. The radionuclides considered are $\^$32/P, $\^$90/Y, $\^$131/I, $\^$166/Ho, $\^$192/Ir, $\^$198/Au, $\^$153/Sm, $\^$169/Er and $\^$188/Re. A total of 9 beta-spectra for the radionuclides, currently in domestic use or potential use in the near future, are calculated with enough accuracy and presented in graphs and tables.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.264-265
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• 2000

1차원 반도체 구조인 양자 줄(Quantum Wire)은 새로운 물리 현상의 가능성을 보여줄 것으로 기대된다.$^{(1)(2)}$ 이 구조에서 운반자는 2차원 퍼텐셜에 가두어지므로 1차원 퍼텐셜인 양자 우물에 갇힌 운반자 보다 더 많이 양자화가 이루어져 이 운반자의 상태 에너지는 더 쪼개지며, 양자 줄의 상태 밀도는 에너지 준위에 대해 계단 함수가 아닌 변형된 Dirac $\delta$ 함수꼴을 가진다.$^{(3)}$ 그러나, 1차원 반도체 구조인 양자 줄이 나노(nano) 크기 내에서 만들어져야 하므로, 잘 정의된 양자 줄을 만드는 일은 기술상 매우 어려운 일이다. 양자 우물 구조에서 운반자는 결정을 키우는 방향을 따라 나노 크기의 활성 영역 안에 가두어지게 된다. 양자 줄 구조에서의 운반자는 결정 성장 방향뿐만 아니라 수직인 한 방향에서 각각 나노 크기를 갖는 활성 영역에 가두어져야 한다. 여기에서, 결정 성장 방향과 수직으로 활성 영역을 정의하는 것은, 결정 성장 방향과 평행하게 활성 영역을 정의하는 것보다 어려운 일이다. (중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.53-53
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• 2010

Graphene comes into the spotlight as an emergent device material on account of its high carrier mobility reflecting its massless Dirac fermion behavior. Chemical technique to control reversibly the carrier concentration of semiconducting graphene for the achievement of a large-area graphene device has been strongly required. Here we show that the adsorptions of a metal and a molecule can manipulate the carrier concentration of single-layer graphene, epitaxially grown on SiC, which was directly observed using angle-resolve photoemission spectroscopy. These results will shed light on the researches for the very large scale integration of a graphene device. Furthermore, the carrier concentration changes can be applied to a highly sensitive gas sensor or a detector for an specific binding between an antigen and an antibody.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.307-307
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• 2011

Graphene is the hottest topic in condensed-matter physics due to its unusual electronic structures such as Dirac cones and massless linear dispersions. Graphene can be epitaxially grown on various metal surfaces with chemical vapor deposition processes. Such epitaxial graphene shows modified electronic structures caused by substrates. Here, local geometric and electronic structures of graphene grown on Ru(0001) will be presented. Scanning tunneling microscopy (STM) and spectroscopy (STS) was used to reveal energy dependent atomic level topography and position-dependent differential conductance spectra. Both topography and spectra show variations from three different locations in rippled structures caused by lattice mismatch between graphene and substrate. Based on the observed results, structural models for graphene on Ru(0001) system were considered.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.125-125
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• 2012

Graphene was epitaxially grown on a 6H-SiC(0001) substrate by thermal decomposition of SiC under ultrahigh vacuum conditions. Using scanning tunneling microscopy (STM), we monitored the evolution of the graphene growth as a function of the temperature. We found that the evaporation of Si occurred dominantly from the corner of the step rather than on the terrace. A carbon-rich $(6{\sqrt{3}}{\times}6{\sqrt{3}})R30^{\circ}$ layer, monolayer graphene, and bilayer graphene were identified by measuring the roughness, step height, and atomic structures. Defect structures such as nanotubes and scattering defects on the monolayer graphene are also discussed. Furthermore, we confirmed that the Dirac points (ED) of the monolayer and bilayer graphene were clearly resolved by scanning tunneling spectroscopy (STS).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.114-114
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• 2011

Graphene is the hottest topic in condensed-matter physics due to its unusual electronic structures such as Dirac cones and massless linear dispersions. Graphene can be epitaxially grown on various metal surfaces with chemical vapor deposition (CVD) processes. Such epitaxial graphene shows modified electronic structures caused by substrates. In the method for removal of the effect of substrate, there are bi, tri-layer graphene, gold intercalation, and oxygen intercalation. Here, We will present the changes of geometric and electronic structure of graphene grown on Ru(0001) by oxygen intercalation between graphene and Ru(0001). Using Scanning tunneling microscopy (STM) and spectroscopy (STS), we observed the aspect that the band gap features near the fermi level of graphene on Ru(0001) system is shifted and narrow. Based on the observed results, two effects by intercalated oxygen were considered.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.11-11
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• 2011

In this talk, I will discuss roles of pseudo vector and scalar potential in changing physical properties of graphene systems. First, graphene under small uniaxial strain is shown to be described by the generalized Weyl's Hamiltonian with inclusion of pseudo vector and scalar potential simultaneously [1]. Thus, strained graphene is predicted to exhibit velocity anisotropy as well as work function enhancement without any gap. Second, if homogeneous strains with different strengths are applied to each layer of bilayer graphene, transverse electric fields across the two layers can be generated without any external electronic sources, thereby opening an energy gap [2]. This phenomenon is made possible by generation of inequivalent pseudo scalar potentials in the two graphene layers. Third, when very tiny lateral interlayer shift occurs in bilayer graphene, the Fermi surfaces of the system are shown to undergo Lifshitz transition [3]. We will show that this unexpected hypersensitive electronic topological transition is caused by a unique interplay between the effective non-Abelian vector potential generated by sliding motions and Berry's phases associated with massless Dirac electrons.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.385-385
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• 2011

Ion beam Sputtering (IBS)를 이용한 물질 표면의 pattern 형성은 물리적 변수 조절로 손쉽게 nano structure의 크기와 형태를 조절할 수 있어 관심을 받고 있다. 본 연구발표에서는 massless Dirac Fermion behavior로 인한 highly carrier mobility와 같은 특성으로 인해 차세대 device material로 각광받고 있는 Graphene의 layered compound (층상구조) 형태인 HOPG (Highly Ordered Pyrolysis Graphite)에 IBS (Ion beam Sputtering)를 이용해 nano structure가 형성 가능함을 보이고 그 특징에 대해 소개하려 한다. HOPG(0001)를 Sputter 했을 때, 표면에 잘 정렬된 nano ripple pattern이 형성 가능함을 확인하였으며 sputter하는 시간을 변화하면 약 10 nm에서 80 nm까지 wavelength를 조절할 수 있다. 또한 이전의 IBS를 이용한 연구들에서 확인할 수 있는 다른 물질의 곧게 뻗은 nano ripple과는 다르게 ripple의 끝에 nano swab이 생기는 것을 AFM (Atomic Force Microscope)으로 확인할 수 있었다. 이러한 Graphite에서만 나타나는 Sputter에 의한 표면의 변화의 원인을 규명하고자 Sputter가 지속됨에 따라 나타나는 mopology의 roughness와 wavelength의 시간에 따른 dynamic scaling behavior를 확인하였고 그 얼개를 알기 위해 simulation을 수행 하였다.