• Journal of electromagnetic engineering and science
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• 제10권4호
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• pp.316-321
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• 2010

This paper presents a novel fourth harmonic mixer with new structure. The traditional 3-ports fourth harmonic mixer and the novel fourth harmonic mixer are designed by ADS, HFSS and CST simulator. The mixers have been fabricated and tested. The size of the traditional 3-ports fourth harmonic mixer is $12{\times}15$ mm, and the best conversion loss is 18.7 dB according to the measurement. Since the traditional 3-port mixer size is too large to be ranked, we design a novel fourth harmonic mixer for imaging system. The width of the mixing module in the novel fourth harmonic mixer is only 3.65 mm, and this size is fully capable to meet the mixer unit space which is not greater than 5 mm. The simulation result shows that the mixer has good performance, and the experiment result shows that the best conversion loss of the novel fourth harmonic mixer is 16.3 dB at RF signal of 91.3 GHz.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 한국전자파학회 2001년도 종합학술발표회 논문집 Vol.11 No.1
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• pp.279-282
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• 2001

Ka-Band MMIC Mixer 칩 을 InGaAs/GaAs p-HEMT 공정의 Schottky Diode을 이용하여 개발하였다 설계된 칩은 상/하향 주파수 변환기로 사용할 수 있으며 Double Balance 구조로 되어있다. 크기 3.0$\times$2.4 $\textrm{mm}^2$ 칩의 On-wafer측정 결과, RF주파수 24～27 GHz와 LO주파수 16.28 GHz, IF 주파수 7.72～10.72GHz 상/하향에 대해서, 변환손실 <7dB와 Port별 격리도 >20dBc의 특성을 얻었다.

• Journal of electromagnetic engineering and science
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• 제3권2호
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• pp.86-90
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• 2003

A flat conversion loss in microwave mixer is hard to achieve if integrating with an image rejection filter(IRF). This is due to the change of termination condition with respect to the LO and IF frequency at RF port where the filter has 50 ohm termination property only in the RF band. This paper describes a flatness maintenance in the down mixer concerning a diode matching condition as well as an electrical length of embedding line at RF port. The implemented single balance diode mixer is suitable for a 23 ㎓ European Terrestrial Radio. RF, LO and fixed IF frequency chosen in this paper are 21.2∼22.4 ㎓, 22.4∼23.6 ㎓ and 1.2 ㎓, respectively. The measured results show a conversion loss of 8.5 ㏈, flatness of 1.2 ㏈ p-p, input P1㏈ of 7㏈m, IIP3 of 15.42 ㏈m with nominal LO power level of 10㏈m. The return loss of RF and LO port are less than - 15 ㏈ and - 12 ㏈, respectively and IF port is less than - 6 ㏈. LO/RF and LO/IF isolation are 18 ㏈ and 50 ㏈, respectively. This approach would be a helpful reference for designing up/down converter possessing a filtering element.

• Journal of the Institute of Electronics Engineers of Korea TC
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• 제48권6호
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• pp.34-40
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• 2011

From the present paper researched about the Design of Image Rejection SSB Modulator for X-Band Monopulse RADAR using Waveguide Hybrid Coupler. Generally, SSB modulator mixes IF(RF) and LO signals, and then it converts to RF(IF) frequency band. In this case, in order to transmit one sideband from RF band, SSB modulator is demanded the removal of image and LO signal. The balanced mixer was designed using waveguide hybrid coupler and crystal mixer diode to mix LO and IF signal. And also the IF Amplifier was designed for IF(+) and IF(-) signal generation which have $90^{\circ}$ phase differences which are suitable in two crystal mixer diode inputs. In order to maintain a high electric reliability from high frequency band the waveguide and IF amplifier's case were manufactured with aluminum using deep brazing techniques. The test result of SSB modulator, LO and sideband signal rejection ratio were 14.2dB and 18.5dB respectively.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 한국통신학회 1998년도 추계종합학술발표회 논문집(상)
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• pp.823-826
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• 1998

• KIEE International Transactions on Electrophysics and Applications
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• 제4C권6호
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• pp.272-275
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• 2004

A balanced single side-band (SSB) mixer employing a sub-harmonic configuration is designed for up and down conversions in K-band. The designed mixer uses anti-parallel diode (APD) pairs to effectively eliminate even harmonics of the local oscillator (LO) spurious signal. To reduce the odd harmonics of LO at the RF port, we employ a balanced configuration for LO. The fabricated chip shows 12$\pm$2dB of conversion loss and image-rejection ratio of about 20dB for down conversion at RF frequencies of 24-27.5GHz. As an up-conversion mode, the designed chip shows 12dB of conversion loss and image-rejection ratio of 20 ～ 25 dB at RF frequencies of 25 to 27GHz. The odd harmonics of the LO are measured below -37dBc.

• Journal of the Korean Institute of Telematics and Electronics
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• 제11권1호
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• pp.40-46
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• 1974

This paper deals with the self-excited mixer using tunnel diode oscillator operated as a microwave source and Doppler signal detector. The system impedance, the oscillation condition and the frequency conversion theory including moving target are investigated. The oscillating frequency and the output of tunnel diode oscillator are 2.035 GHz and 0.1 mW. The input signal frequency which is equivalent to Doppler signal is lower than tunnel diode oscillator frequency by 125 MHz. TDe conversion loss has been investigated as a functicn of input signal level. This loss is greater than 67 db for the large pump mode.

• Journal of the Korea Institute of Information and Communication Engineering
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• 제16권5호
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• pp.1023-1028
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• 2012

A MMIC (Monolithic Microwave Integrated Circuit) mixer chip using the Schottky diode of an GaAs p-HEMT process has been developed for the I/Q demodulator of non-contact near field microwave probing system. A single balanced mixer type is adopted to achieve simple structure of the I/Q demodulator. A quadrature hybrid coupler and a quarter wavelength transmission line for 180 degree hybrid are realized with lumped elements of MIM capacitor and spiral inductor to reduce the mixer chip size. According to the on-wafer measurement, this MMIC mixer covers RF and LO frequencies of 1650MHz to 2050MHz with flat conversion loss. The MMIC mixer with miniature size of $2.5mm{\times}1.7mm$ demonstrates conversion loss below 12dB for both variations of RF and LO frequencies, LO-to-IF isolation above 43dB and RF-to-IF isolation above 23dB, respectively.

• Design & Manufacturing
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• 제7권1호
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• pp.55-59
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• 2013

A Light Emitting Diode(LED) is a semiconductor device which converts electricity into light. LEDs are widely used in a field of illumination, LCD(Liquid Crystal Display) backlight, mobile signals because they have several merits, such as low power consumption, long lifetime, high brightness, fast response, environment friendly. In general, LEDs production does die bonding and wire bonding on board, and do silicon and phosphor dispensing to protect LED chip and improve brightness. Then lens molding process is performed using mixed liquid silicon rubber(LSR) by resin and hardener. A mixture of resin and hardener affect the optical characteristics of the LED lens. In this paper, computational design of static mixer was performed for mixing of liquid silicon. To evaluate characteristic of mixing efficiency, finite element model of static mixer was generated, and fluidic analysis was performed according to length of mixing element. Finally, optimal condition of length of mixing element was applied to static mixer from result of fluidic analysis.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• 제10권1호
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• pp.90-98
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• 1999

This paper presents a wideband single-balanced mixer using a diode which can be used in RF receiver of microwave measurement systems. For wideband characteristic, local oscillator(LO) signal is provided to diode with low loss using a coplanar waveguide-to-slotline balun. For high isolation characteristic radio frequency (RF) port and intermediate frequency (IF) port are designed using directional coupler. This mixer presents 30.5~31.17dB conversion loss whose flatness is within 1dB for 9 kHz~2.6 GHz wideband RF signal, and above 30 dB isolation for LO signal.