• Journal of information and communication convergence engineering
• /
• v.1 no.3
• /
• pp.139-142
• /
• 2003

In this paper, we consider the factors that affect a conversion loss performance in designing a single balanced diode mixer integrated with IRF(Image Reject Filter), based on the embedded electrical wavelength placed between the IRF and mixer, diode matching and LO drive amplifier. To evaluate the conversion loss performance, we suggest two types of a single balanced mixer using 90 degree branch line coupler, microstrip line and schottky diode. One is only mixer and the other is integrated with IRF and LO drive amplifier. The measured results of a single balance diode mixer integrated IRF show the conversion loss of 8.5 dB and the flatness of 1 dB p-p from 21.2 GHz to 22.6 GHz with 10 dBm LO. The measured input PI dB and IIP3 are 7 dBm and 15 dBm respectively under the nominal LO power level of 10dBm. The LO/RF and LO/IF isolation are 22 dB and 50 dB, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.15 no.3
• /
• pp.258-264
• /
• 2004

In this paper, MMIC double balanced star mixer for 40 ㎓ was implemented on GaAs substrate with backside vias. In the design of the MMIC mixer, the design of balun and diode was required. A novel balun structure using microstrip to CPS was presented. The 40 ㎓ balun was designed based on the design experience of the scale-down balun by 2 ㎓. The balun may be suitable for fabrication in MMIC process with backside via and can easily be applied for DBM(Double Balanced Mixer). A Schottky diode was designed and implemented using p-HEMT process considering the compatability with other high frequency MMIC's fabricated on p-HEMT base process. Finally, the double balanced star mixer was fabricated using the balun and the p=HEMP Schottky diode. The measured performance of mixer shows 30 ㏈ conversion loss at 18 ㏈m LO power. This insufficient performance is caused by the unwanted diode at AlGaAs junction in vertical structure of p-HEMT. If the p-HEMT's gate is recessed to AlGaAs layer, and so the diode is eliminated, the mixer's performances will be improved.

• Journal of electromagnetic engineering and science
• /
• v.17 no.2
• /
• pp.65-70
• /
• 2017

The design and implementation aspects of a new single-balanced mixer for ultra-wideband (UWB) applications are presented in this study. The proposed mixer utilizes a miniaturized UWB ring coupler as a balun, consisting of a pair of in-phase and inverted-phase transitional structures. The well-balanced UWB performance of the ring coupler, aside from the optimized diode matching, results in improved conversion loss and inter-port isolations for a wide bandwidth. The size of the implemented single-balanced diode mixer is reduced to about 60% of the area of the conventional single-balanced ring diode mixer. The measured results of the proposed mixer exhibit an average conversion loss of 7.5 dB (minimum 6.7 dB) and a port-to-port isolation of greater than 18 dB over a UWB frequency range of 3.1-10.6 GHz. The measured results agree well with the simulated results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.24 no.11
• /
• pp.1047-1054
• /
• 2013

In this paper, we propose a dual-mode mixer to have multi-band radar signal receiver to be compact. The proposed mixer using a anti-parallel diode is operated as a fundamental mixer or sub-harmonic mixer with respect to a control voltage. A fundamental mixer with a control voltage show a conversion loss of -10 dB, 1dB compression point of 2 dBm at X-band. On the other hand, it is performed as a sub-harmonic mixer with a conversion loss of -10 dB, 1 dB compression point of 2 dBm at K-band.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2003.10a
• /
• pp.66-70
• /
• 2003

In this paper a plannar singly balanced diode Miter for 24GHz band application is designed and implemented using a microstrip line and two schottky barrier beam lead mixer diodes. The implemented mixer have a conversion loss of 6 [dB], LO/RF isolation of 23 [dB], input 1dB compression point of 4 [dBm]. this diode mixer would be useful for homedyne radar.

• Journal of IKEEE
• /
• v.16 no.2
• /
• pp.127-130
• /
• 2012

In this paper, we reported on a single balanced monolithic diode mixer using Marchand balun for millimeter-wave applications. The single balanced monolithic mixer was fabricated using drain-source-connected pseudomorphic high electron mobility transistor (PHEMT) diodes considering the PHEMT MMIC full process. The average conversion loss is 16 dB in the RF frequency range of 81~86 GHz at LO frequency of 75 GHz with LO power of 10 dBm. The RF-to-LO isolation characteristics are greater than -30 dB and the total chip size is $1.0mm{\times}1.35mm$.

• Journal of information and communication convergence engineering
• /
• v.14 no.1
• /
• pp.35-39
• /
• 2016

In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitance of 8.03 fF, and a cutoff frequency of 944 GHz. Based on this technology, a 94-GHz single balanced mixer was constructed. The fabricated mixer shows an average conversion loss of -7.58 dB at an RF frequency of 92.5 GHz to 95 GHz and an IF frequency of 500 MHz with an LO power of 7 dBm. The RF-to-LO isolation characteristics were greater than -32 dB. These values are considered to be attributed to superior Schottky diode characteristics.

• The Journal of The Korea Institute of Intelligent Transport Systems
• /
• v.2 no.2 s.3
• /
• pp.97-101
• /
• 2003

A MMIC (monolithic microwave integrated circuit) mixer chip using the Schottky diode of an InGahs/CaAs p-HEMT process has been developed for the receiver down converter of Ku-band. A different approach to the MMIC mixer structure is applied for reducing the chip size by the exchange of ports between If and LO. This MMIC covers with RF (14.0 - 14.5 GHz) and If (12.252 - 12.752 GHz). According to the on-wafer measurement, the miniature (3.3X3.0 m) MMIC mixer demonstrates conversion loss below 9.8 dB, RF-to-IF isolation above 23 dB, LO-to-IF isolation above 38 dB, respectively.

• Proceedings of the IEEK Conference
• /
• 2000.11a
• /
• pp.361-364
• /
• 2000

One of the problems using DCR(Direct Conversion Receiver) are DC offset, poor channel selectivity. APDP(Anti Parallel Diode Pair) can be good candidate for DCR frequency mixer due to its inherent End harmonic suppression. APDP shows good IP2 and DC suppression. This paper describe single APDP LO power characteristics, IP2, and receiver structure utilizing APDP frequency mixer

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.14 no.12
• /
• pp.1335-1340
• /
• 2003

In this paper, a single balanced diode Mixer for the homodyne FMCW radar to detect distance and velocity of a vehicle target is designed and implemented using a microstrip line and two schottky barrier beam lead diodes. This mixer is optimally designed to have less a conversion loss within the 100 MHz bandwidth with a little LO injection power and a higher LO isolation as soon as possible through the embedded electrical length of microsrtrip line placed between the coupler and diode matching, considering together LO matching condition. The measured results show 6 dB of conversion loss, 23 dB LO/RF isolation and 3 dBm of input 1l dB, respectively.