• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.203-206
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• 2002

We implemented 2.5Gbps optical transponder by using uncooled laser diode and measured temperature effects of 2.5Gbps uncooled laser diode, such as optial power vs. injection current, extinction ratio, and power penaty.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.1
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• pp.71-76
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• 2022

Since brightness is proportional to the operating current, a method of connecting several LEDs in series and driving with a constant current source is widely used for driving circuits of LED lights. Because several LEDs are connected in series, if some LEDs open due to a fault, the current path is broken and all other LEDs connected in series are turned off. In this paper, we designed a circuit to solve this problem by connecting a Zener diode having a breakdown voltage of about 0.4V higher than the LED operating voltage in parallel with each LED to create a current bypass in case of LED failure. Through simulations and experiments, it was confirmed that the current of the Zener diode hardly flows when the LED is operating normally, and that the Zener diode stably operates as a current bypass when the LED fails.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.285-286
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• 2007

Current distributions according to electrode patterns in vertical structured InGaN/GaN LED (light emitting diode) were investigated quantitatively by utilizing three dimensional electrical circuit modeling method. The uniformity of the injected current density in the active layer was compared among different electrode patterns. It was found that the current uniformity was greatly dependent on the electrode pattern in vertical InGaN/GaN LEDs.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.63-67
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• 1992

Shallow $p^{+}-n,n^{+}-p$ diodes have been fabricated using rapid thermal diffusion by solid diffusion source and rapid thermal alloying with pure Aluminum. Diode area and junction depth are designed about 2.83$[\times}10^{-3}cm^{2}$ and 250nm, respectively. Electrical characteristics of $p^{+}-n$ diode show that the ideality factor is 1.04 and reverse current density is 29.3nA/$cm^{2}$, respectively. On the other hand, those of $n^{+}-p$ diode show that the ideality factor is 1.05 and reverse current density is 85.2pA/$cm^{2}$. The reverse currents are measured at 5V reverse bias after rapid thermal alloying for all the measurement.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.3
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• pp.439-444
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• 2016

The method for extracting the SPICE model parameter of Schottky diode under DC forward bias is proposed. A method for improving the accuracy of the SPICE model parameter at various temperatures is proposed. Three analysis steps according to the magnitude of the current is used in order to extract the parameters effectively. At each analysis step, initial parameters are calculated by using the current-voltage equations and the Levenberg-Marquardt analysis is proceeded. To verify the validity of the proposed method, the SPICE model parameters for the BAT45 and FSV1045 under DC forward bias is extracted. Schottky diode currents obtained from the proposed method shows the average relative error of 6.1% and 9% compared with the measured data for the BAT45 and FSV1045 sample at various temperatures.

• Journal of the Korean Chemical Society
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• v.38 no.1
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• pp.34-40
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• 1994

First observation of uranium using a diode laser was published recently. The experiment was performed by the optogalvanic spectroscopy using diode lasers. A laser source causes the current change in a hollow cathode discharge lamp when metal atoms in plasma absorb the diode laser light. The optogalvanic signal is collected by detecting the current change. This work is the extended investigation of our previous research, the uranium detection using a diode laser. New electronic transitions of uranium and thorium in 775∼850 nm were investigated using diode lasers. In addition, the Rb(Ⅰ) optogalvanic spectra at 780.02 nm and 794.76 nm were studied. The Rb(Ⅰ) spectrum at 780.02 nm showed the isotopic features and hyperfine splittings. This work provides a key idea that the diode lasers are useful in the specrochemical analysis of the radioactive actinides that have a rich spectrum with transitions which can be easily reached with AlGaAs diode lasers. Also, this study shows that the diode lasers can be an important tool to find the spectroscopic parameters of actinides and rare earth elements which have not known.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2265-2269
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• 2011

1 kV high-voltage GaN Schottky diode is realized using GaN-on-Si template by oxidizing Ni-Schottky contact. The Auger electron spectroscopy (AES) analysis revealed the formation of $NiO_x$ at the top of Schottky contact. The Schottky contact was changed to from Ni/Au to Ni/Ni-Au alloy/Au/$NiO_x$ by oxidation. Ni diffusion into AlGaN improves the Schottky interface and the trap-assisted tunneling current. In addition, the reverse leakage current and the isolation-leakage current are efficiently suppressed by oxidation. The isolation-leakage current was reduced about 3 orders of magnitudes. The reverse leakage current was also decreased from 2.44 A/$cm^2$ to 8.90 mA/$cm^2$ under -100 V-biased condition. The formed group-III oxides ($AlO_x$ and $GaO_x$) during the oxidation is thought to suppress the surface leakage current by passivating surface dangling bonds, N-vacancies and process damages.

• Journal of Power Electronics
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• v.16 no.5
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• pp.1689-1697
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• 2016

Continuous conduction mode (CCM) boost converters are commonly used in home appliances and various industries because of their simple topology and low input current ripples. However, these converters suffer from several disadvantages, such as hard switching of the active switch and reverse recovery problems of the output diode. These disadvantages increase voltage stresses across the switch and output diode and thus contribute to switching losses and electromagnetic interference. A new topology is presented in this work to improve the switching characteristics of CCM boost converters. Zero-current turn-on and zero-voltage turn-off are achieved for the active switches. The reverse-recovery current is reduced by soft turning-off the output diode. In addition, an input current sensorless control is applied to the proposed topology by pre-calculating the duty cycles of the active switches. Power factor correction is thus achieved with less effort than that required in the traditional method. Simulation and experimental results verify the soft-switching characteristics of the proposed topology and the effectiveness of the proposed input current sensorless control.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.294-298
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• 2003

In this paper, the new zero-current-transition (ZCT) circuit cell is proposed. The main switch is turned-off under the zero current and zero voltage condition, and there is no additional current stress and voltage stress in, the main switch and the main diode. The Auxiliary switch is turned-off under the zero voltage condition, and the main diode is turned-on under the zero voltage condition, The resonant current required to obtain the ZCT is small and regenerated to the input voltage source. The operational principles of the boost converter integrated with the proposed ZCT circuit cell is analyzed theoretically and verified by the simulation and experimental result. Index terms - zero-current-transition (ZCT), zero-current- switching (ZCS), zero-voltage-switching (ZVS)

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.257-260
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• 2002

This paper describes the pixel of AMOLED(act ive matrix organic light emitting diode) driving circuit by poly-sl technology. The area per pixel is 278um$\times$278um in 120$\times$160(2.2 inch) Driving the OLEDS with active matrix leads to the lower voltage operation, the lower peak pixel currents and the display with much greater efficiency and brightness The role of the active matrix is to provide a constant current throughout the entire frame time and is eliminating the high currents encountered In the passive matrix approach, This design can support the high resolutions expected by the consumer because the current variation specification is norestricted. The pixel has been designed driving TFT threshold voltage cancellation circuit and wide aperture ratio circuit that communizes 4 pixel. The test simulation results and layout are 11% per threshold-current var Eat ion and 12.5% the aperture ratio of increase.