• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.59-60
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• 2014

In this paper, development of laser diode driver with 2.5kW rating is presented. The driver is configured with interleaved PFC converter, high frequency full bridge DC-DC converter, two laser diode drivers and ${\mu}$-processor based controller. The system has two laser diode drivers for providing high current and low current. High current driver delivers normal output power of diode; low current driver is for providing critical current of diode for long lifetime. Computer simulation and experiment was performed for verification, as the results, developed driver performs well.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.11
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• pp.640-645
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• 1999

This paper proposes a new series-connected diode rectifier which draws sinusoidal input currents. The proposed rectifier system is configured by adding an auxiliary circuit to the conventional 12-pulse series-connected diode rectifier and employing a current injection technique. A low kVA($0.02P_{\circ}$(PU) ) active current source injects a triangular current into the interphase reactor of the diode rectifier. The current injection results in near sinusoidal input current from the utility with less than 1% THD. The resulting system is suitable for high voltage and high power applications. Experimental and simulation results are provided from a 220V, 3kVA prototype rectifier system.

• Journal of Power Electronics
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• v.9 no.6
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• pp.903-910
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• 2009

In this paper, a digital average current mode control using diode current sensing technique is proposed. Although the conventional inductor current sensing technique is widely used, the sensed signal of the current is negative. As a result, it requires an additional circuit to be applied to general digital controller ICs. The proposed diode current sensing method not only minimizes the peripheral circuit around the digital IC but also consumes less power to sense current information than the inductor current sensing method. The feasibility of the proposed technique is verified by experiments using a 500W power factor correction (PFC) boost rectifier.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.346-349
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• 1999

This paper proposes a new series-connected diode rectifier which draws sinusoidal input currents. The proposed rectifier system is configured by adding an auxiliary circuit to the conventional 12-pulse series-connected diode rectifier and employing a current injection technique. A low kVA (0.02Po (PU) ) active current source injects a triangular current results in near sinusoidal input current from the utility with less than 1% THD. The resulting system is suitable for high voltage and high power applications. Experimental results is provided from a 220VA rectifier system.

• Journal of the Korean Solar Energy Society
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• v.36 no.5
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• pp.63-71
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• 2016

Installed PV module in field is affected by shading caused by various field environmental factors. Bypass diodes are installed in PV module for preventing a power loss and degradation of PV module by shading. But, Bypass diode is easily damaged by surge voltage and has often initial a defect. This paper propose the electric characteristic variation and the power prediction of PV module with damaged bypass diode. Firstly, the resistance for normal bypass diode and damaged bypass diode of resistance was measured by changing the current. When the current increases, the resistance of normal bypass diode is almost constant but the resistance of damaged bypass diode increases. Next, To estimate power of PV module by damaged bypass diode, the equation for the current is derived using solar cell equivalent circuit. Finally, the derived equation was simulated by using MatLab tools, was verified by comparing experimental data.

• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.105-107
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• 2006

Amorphous silicon is a kind of optical to electric conversion material with current or voltage type after generating a numerous free electron and hole when it is injected by light. It is very effective technology to make schottky diode by bonding thin film to use optical diode. In this paper, we have fabricated optical diode device by forming chrome silicide film through thermal processing with thin film($100{\AA}$) having optimal amorphous silicon. The optimal condition is that we make a thin film by using PECVD(Plasma Enhanced Chemical Vapor Deposition) to improve reliability and characteristics of optical diode. We have obtained high quality diode by using chrome silicide optical diode from dark current and optical current measurement compared to previous method. It makes a simple process and improves a good reliability.

• Korean Chemical Engineering Research
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• v.54 no.2
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• pp.274-277
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• 2016

Effects of interlayer insertion between multi-quantum well and electron blocking layer of green light emitting diode on diode performances were studied by device simulation. Dependence of Mg doping depth on characteristics of current-voltage, emitting wavelength, leakage current, and external quantum efficiency was investigated, and the optimum diode structure was presented. Device structures with interlayers doped in entire region and up to 30 nm showed remarkable reduced leakage current and effectively relieved efficiency droop which is one of the biggest challenges in green light emitting diode. Furthermore, the most improved characteristics in current-voltage and electroluminescence was obtained by the latter structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.187-190
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• 2000

We fabricated general photo diode, surface etched photo diode and floating gate MOSFET by CMOS process. In a design stage, we expect that surface etched photo diode will be improved as to photo sensitivity. However, because the surface of silicon was damaged in etching process, the surface etched diode had a high dark current as well as low photo current level. Finally, we examined the current-voltage properties for the floating gate MOSFET on n-well and confirmed that the device can be act as an efficient photo-sensor. The floating gate MOSFET was operated in parasitic bipolar transistor mode.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.279-283
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• 2014

In this paper, we present an economical and practical standard to install a bypass diode in a thin-film PV module. This method helps to reduce heat generation and to prevent module degradation due to excess current from reverse bias. The experimental results confirm that for different numbers of solar cells, there is a relation between the excess reverse current and the degradation of solar cells in a-Si:H modules. The optimal number of solar cells that can be connected per bypass diode could be obtained through an analysis of the results to effectively suppress the degradation and to reduce the heat generated by the module. This technique could be expanded for use in high power crystalline Si PV modules.

• The Transactions of the Korean Institute of Power Electronics
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• v.6 no.4
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• pp.38-38
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• 2001

The three-phase diode rectifier with capacitive filter is highly sensitive to line voltage unbalance. Because of its inherent nonlinear characteristics, small line voltage unbalance may cause highly unbalanced line current, causing detrimental effects on power quality. This paper presents a theoretical basis on this ′unbalance amplification effect′ and derives an analytical model of line current characteristics under unbalanced line voltage condition for various modes of operation. The results provide a basic guideline for optimal design of a three-phase diode rectifier with capacitive filter that is most commonly used for interfacing various power conversion equipments to power lines.