• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.213-224
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• 2010

An optically controlled silicon MESFET (OPFET) was fabricated by diffusion process to enhance the quantum efficiency, which is the most important optoelectronic device performance usually affected by ion implantation process due to large number of process induced defects. The desired impurity distribution profile and the junction depth were obtained solely with diffusion, and etching processes monitored by atomic force microscope, spreading resistance profiling and C-V measurements. With this approach fabrication induced defects are reduced, leading to significantly improved performance. The fabricated OPFET devices showed proper I-V characteristics with desired pinch-off voltage and threshold voltage for normally-on devices. The peak photoresponsivity was obtained at 620 nm wavelength and the extracted external quantum efficiency from the photoresponse plot was found to be approximately 87.9%. This result is evidence of enhancement of device quantum efficiency fabricated by the diffusion process. It also supports the fact that the diffusion process is an extremely suitable process for fabrication of high performance optoelectronic devices. The maximum gain of OPFET at optical modulated signal was obtained at the frequency of 1 MHz with rise time and fall time approximately of 480 nS. The extracted transconductance shows the possible potential of device speed performance improvements for shorter gate length. The results support the use of a diffusion process for fabrication of high performance optoelectronic devices.

• Journal of Pharmaceutical Investigation
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• v.20 no.2
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• pp.79-88
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• 1990

A numerical model for diffusion and dissolution controlled transport from dispersed matrix is presented. The rate controlling process for transport is considered to be diffusion of drug through a concentration gradient coupled with time-dependent surface change and/or disappearance of the dispersed drug in response to the dissolution. The transport behavior of drug was explained in terms of ${\nu}$ parameter: ${\nu}$ value means a ratio of diffusion time constant and dissolution time constant. This general model has wide range of application from where release is controlled by the diffusion rate to where release is governed by the dissolution rate. Based on this model, theoretical drug concentration, particle size distributions in the polymer matrix system and the resulting release rate were also investigated.

• Journal of computational fluids engineering
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• v.6 no.4
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• pp.15-25
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• 2001

Numerical prediction of the diffusion controlled transition in a turbine gas pass is important because it can change the local heat transfer rate over a turbine blade as much as three times. In this study, the gas flow over turbine blade is simplified to the flat plate boundary layer, and an adaptive grid scheme redistributing grid points within the computation domain is proposed with a great emphasis on the construction of the grid control function. The function is sensitized to the second invariant of the mean strain tensor, its spatial gradient, and the interaction of pressure gradient and flow deformation. The transition process is assumed to be described with a κ-ε turbulence model. An elliptic solver is employed to integrate governing equations. Numerical results show that the proposed adaptive grid scheme is very effective in obtaining grid independent numerical solution with a very low grid number. It is expected that present scheme is helpful in predicting actual flow within a turbine to improve computation efficiency.

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.1
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• pp.59-66
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• 2000

To investigate the optimum brazing condition, variation of bonded structure and mechanical properties of novel brazed pure Al with bonding condition (brazing temperature, time and Si/flux ratio) was studied. A basic study of the bonding mechanism was also examined. The optimum brazing condition was obtained at $590^{\circ}$ for 2 minutes and the bonded structure showed that it is composed of almost entirely eutectic Al-Si with near eutectic composition. At higher brazing temperature $630^{\circ}$, hypoeutectic Al-Si structure was observed in the bonded area and resulted in erosion of base metal. The thickness of eutectic layer formed in optimum brazing temperature increased linearly with the square root of time, showing a general diffusion controlled process. The ultimate tensile strength of bonded joint brazed at an optimum brazing condition was about 60% of base metal and its fracture surface showed a brittle mode.

• Computers and Concrete
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• v.3 no.2_3
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• pp.103-122
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• 2006

Drying shrinkage of concrete occurs due to the loss of moisture and thus, it is controlled by moisture diffusion process. On the other hand, the shrinkage causes cracking of concrete and affects its moisture diffusion properties. Therefore, moisture diffusion and drying shrinkage are two coupled processes and their interactive effect is important for the durability of concrete structures. In this paper, the two material parameters in the moisture diffusion equation, i.e., the moisture capacity and humidity diffusivity, are modified by two different methods to include the effect of drying shrinkage on the moisture diffusion. The effect of drying shrinkage on the humidity diffusivity is introduced by the scalar damage parameter. The effect of drying shrinkage on the moisture capacity is evaluated by an analytical model based on non-equilibrium thermodynamics and minimum potential energy principle for a two-phase composite. The mechanical part of drying shrinkage is modeled as an elastoplastic damage problem. The coupled problem of moisture diffusion and drying shrinkage is solved using a finite element method. The present model can predict that the drying shrinkage accelerates the moisture diffusion in concrete, and in turn, the accelerated drying process increases the shrinkage strain. The coupling effects are demonstrated by a numerical example.

• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1349-1356
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• 1995

The change of permeation mechanism from Knudsen diffusion to micropore diffusion was observed after CVD modification of an alumina-sol coated alumina support which was prepared by slip coating process. Permselectivities of He/N2, H2/N2, and CO2/N2 were 5.67, 5.02, and 1.44, respectively. These values were higher than those under Knudsen diffusion controlled region.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.583-589
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• 1999

In the fabrication of ceramic chip couples for high frequency application such as the mobile communication equipment the formation of electrode lines and Ag diffusion were investigated with heat treatment conditions for removing organic binders. The deformation and densification of the electrode line greatly depended on the binder burnout process due to the overlapped temperature zone near 400$^{\circ}C$ of the binder dissociation and the solid phase sintering of the silver electrode. Ag ions were diffused into the glass ceramic substrate. The Ag diffusion was led by the glassy phase containing Pb ions rather than by the crystalline phase containing Ca ions. The fact suggests that the Ag diffusion could be controlled by managing the composition of the glass ceramic substrate.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.3
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• Bulletin of the Korean Chemical Society
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• v.17 no.2
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• pp.173-179
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• 1996

A series of tetradentate Schiff base ligands; [1,2-bis(naphthylideneimino)ethane, 1,3-bis(naphthylideneimino)propane, 1,4-bis(naphthylideneimino)butane, and 1,5-bis(naphthylideneimino)pentane] and their Ni(Ⅱ) complexes have been synthesized. The properties of these ligands and their Ni(Ⅱ) complexes have been characterized by elemental analysis, IR, NMR, UV-vis spectra, molar conductance, and thermogravimetric analysis. The mole ratio of Schiff base to Ni(Ⅱ) metal was found to be 1:1. The electrochemical redox process of the ligands and their Ni(Ⅱ) complexes in DMF and DMSO solution containing 0.1 M tetraethyl ammonium perchlorate (TEAP) as a supporting electrolyte have been investigated by cyclic voltammetry, chronoamperometry, differential pulse voltammetry, and controlled potential coulometry at glassy carbon electrode. The redox process of the ligands was highly irreversible, whereas redox process of Ni(Ⅱ) complexes were observed as one electron transfer process in quasi-reversible and diffusion-controlled reaction. The electrochemical redox potentials of the Ni(Ⅱ) complexes were affected by the chelate ring size of ligands. The diffusion coefficients of Ni(Ⅱ) complexes containing 0.1 M TEAP in DMSO solution were determined to be 5.7-6.9 × 10-6 cm2/sec. Also the exchange rate constants were determined to be 1.8-9.5 × 10-2 cm2/sec. These values were affected by the chelate ring size of ligands.

• Journal of the Korean Chemical Society
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• v.42 no.1
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• pp.22-27
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• 1998

Fluorescence quenching of coumarin 153 and coumarin 481 with N,N-dimethylaniline in various solvents was investigated. Quenching rate constants are related to diffusion-limited rate constants to some extent. It is noted that smaller discrepancy was observed between the diffusion-limited rate constant and the experimental quenching rate constant when the stick boundary condition rather than the slip boundary condition was applied for estimating the diffusion coefficients. In nonpolar solvent like cyclohexane fluorescence quenching is adequately explained by the diffusion controlled process within the experimental error, but in acetonitrile the quenching rate constant was estimated to be consistently smaller than the diffusion limited rate constant. This may suggest that fluorescence quenching of coumarin dyes be affected not only by the molecular diffusion but also by the intramoleccular process such as charge separation.