• Bulletin of the Korean Chemical Society
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• 제1권3호
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• pp.113-114
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• 1980

Lumichrome (7,8-dimethylalloxazine) exhibits two fluorescence emission maxima at 440 and 540 nm in pyridine-dioxane. These emission band maxima are attributable to radiative decays from the excited states of lumichrome and its flavin tautomer, 7,8-dimethylisoalloxazine, respectively. The growth of the latter can be followed upon excitation of the former with a 2-nanosecond light pulse generated from the nitrogen plasma discharge lamp. The excited state tautomerism results from proton transfer from N-1 to N-10 position during the lifetime of the lumichrome singlet excited state. The rate depends on the concentration of general base, pyridine, and it is an order of magnitude slower than diffusion-controlled processes.

• 대한기계학회논문집B
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• 제25권7호
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• pp.958-966
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• 2001

This study has examined the microstructural development in the Bridgman type directional solidification of hyper-peritectic Sn-Cd alloys, and the temperature and flow field have been numerically simulated to see if there is any change induced by convection. The directional solidification experiments carried out in quartz tubes with inside diameters of 0.4∼6mm showed that the resulting microstructures are clearly dependent on the size of tube diameters. The bigger ampoules where the effect of convection is highly expected produced saw-like structures resulting from the primary $\alpha$ and peritectic $\beta$ phase growing together at a planar solid-liquid front, with the former being surrounded by the latter. In the smaller ampoules, where the effect of convection is expected low however, the saw structure disappears, and as is understood from the theoretical prediction based on diffusion-controlled solidification the initial growth of the primary $\alpha$ phase is replaced by the nucleation of the peritectic $\beta$ phase whose growth continues to the end of the solidification.

• Journal of Ginseng Research
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• 제42권3호
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• pp.304-311
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• 2018

Background: Ginseng black spot disease resulting from Alternaria panax Whuetz is a common soil-borne disease, with an annual incidence rate higher than 20-30%. In this study, the bacterial strains with good antagonistic effect against A. panax are screened. Methods: A total of 285 bacterial strains isolated from ginseng rhizosphere soils were screened using the Kirby-Bauer disk diffusion method and the Oxford cup plate assay. We analyzed the antifungal spectrum of SZ-22 by confronting incubation. To evaluate the efficacy of biocontrol against ginseng black spot and for growth promotion by SZ-22, we performed pot experiments in a plastic greenhouse. Taxonomic position of SZ-22 was identified using morphology, physiological, and biochemical characteristics, 16S ribosomal DNA, and gyrB sequences. Results: SZ-22 (which was identified as Brevundimonas terrae) showed the strongest inhibition rate against A. panax, which showed 83.70% inhibition, and it also provided broad-spectrum antifungal effects. The inhibition efficacies of the SZ-22 bacterial suspension against ginseng black spot reached 82.47% inhibition, which is significantly higher than that of the 25% suspension concentrate azoxystrobin fungicide treatment (p < 0.05). Moreover, the SZ-22 bacterial suspension also caused ginseng plant growth promotion as well as root enhancement. Conclusion: Although the results of the outdoor pot-culture method were influenced by the pathogen inoculum density, the cropping history of the field site, and the weather conditions, B. terrae SZ-22 controlled ginseng black spot and promoted ginseng growth successfully. This study provides resource for the biocontrol of ginseng black spot.

• 한국결정성장학회지
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• 제11권3호
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• pp.127-131
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• 2001

산화물계의 액상소결시 액상량을 변수로 하여 입자형성이 입자성장 거동에 미치는 영향을 고찰하였다. 산화물계 모델로 구형입자의 경우는 MgO$CaMgSiO_{4}$계를 선택하였으며, 각진입자의 경우는 $Al_{2}O_{3}$/ $CaAl_{2}Si_{2}O_{8}$계를 선택하였다. 구형입자인 MgO의 경우 액상량 증가에 따라 입자크기가 감소하였으나,각진입자인 $Al_{2}O_{3}$ 입자의 경우는 계면지배과정에 의해 성장하는 반면, 거친 고상/액상계면을 지닐 것으로 예상되는 구형 MgO입자의 경우는 확산지배과정에 의해 성장하였다.

• Journal of Electrochemical Science and Technology
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• 제9권3호
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• pp.202-211
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• 2018

In this work, Fe-Pd alloy films have been electrodeposited on different substrates using an electrolyte containing $[Pd(NH_3)_4]^{2+}$ (0.02 M) and $[Fe-Citrate]^{2+}$ (0.2 M). The influences of substrate and overpotential on chemical composition, nucleation and growth kinetics as well as the electrodeposited films morphology have been investigated using energy dispersive X-ray spectroscopy (EDS), current-time transients, scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) patterns. In all substrates - brass, copper and sputtered fluorine doped tin oxide on glass (FTO/glass) - Fe content of the electrodeposited alloys increases by increasing the overpotential. Also the cathodic current efficiency is low due to high rate of $H_2$ co-reduction. Regarding the chronoamperometry current-time transients, it has been demonstrated that the nucleation mechanism is instantaneous with a typical three dimensional (3D) diffusion-controlled growth in the case of brass and copper substrates; while for FTO, the growth mode changes to 3D progressive. At a constant overpotential, the calculated number of active nucleation sites for metallic substrates is much higher than that of FTO/glass; however by increasing the overpotential, the number of active nucleation sites increases. The SEM micrographs as well as the XRD patterns reveal the formation of Fe-Pd alloy thin films with nanostructure arrangement and ultra-fine grains.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• 한국재료학회지
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• 제13권1호
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• pp.1-5
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• 2003

Uniform polycrystalline $CoSi_2$layers have been grown in situ on a polycrystalline Si substrate at temperature near $625^{\circ}C$ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt, Co(η$^{5}$ -C$_{5}$ H$_{5}$ )(CO)$_2$. The growth behavior and thermal stability of $CoSi_2$layer grown on polycrystalline Si substrates were investigated. The plate-like CoSi$_2$was initially formed with either (111), (220) or (311) interface on polycrystalline Si substrate. As deposition time was increasing, a uniform epitaxial $CoSi_2$layer was grown from the discrete $CoSi_2$plate, where the orientation of the$ CoSi_2$layer is same as the orientation of polycrystalline Si grain. The interface between $CoSi_2$layer and polycrystalline Si substrate was always (111) coherent. The growth of the uniform $CoSi_2$layer had a parabolic relationship with the deposition time. Therefore we confirmed that the growth of $CoSi_2$layer was controlled by diffusion of cobalt. The thermal stability of $CoSi_2$layer on small grain-sized polycrystalline Si substrate has been investigated using sheet resistance measurement at temperature from $600^{\circ}C$ to $900^{\circ}C$. The $CoSi_2$layer was degraded at $900^{\circ}C$. Inserting a TiN interlayer between polycrystalline Si and $_CoSi2$layers improved the thermal stability of $CoSi_2$layer up to $900^{\circ}C$ due to the suppression of the Co diffusion.

• 한국재료학회지
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• 제32권6호
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• pp.307-312
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• 2022

Metal halide perovskite (MHP) nanocrystals (NCs) have emerged as promising materials for various optoelectronic applications including photovoltaics, light-emitting devices, and photodetectors because of their high absorption coefficient, high diffusion length, and photoluminescence quantum yield. However, understanding the morphological evolution of the MHP NCs as well as their controlled assembly into optoelectronic devices is still challenging and will require further investigation of the colloidal chemistry. In this study, we found that the amount of n-octylamine (the capping agent) plays a crucial role in inducing further growth of the MHP NCs into one-dimensional nanowires during the aging process. In addition, we demonstrate that the dielectrophoresis process can permit self-alignment of the MHP nanowires with uniform distribution and orientation on interdigitated electrodes. A strong light-matter interaction in the MHP NWs array was observed under UV illumination, indicating the photo-induced activation of their luminescence and electrical current in the self-aligned MHP nanowire arrays.

• 한국재료학회지
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• 제8권11호
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• pp.1026-1030
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• 1998

Fe기 비정질합금에서 과냉각액체영역의 유무에 따른 열적 안정성을 비교평가하기 위하여 결정화온도 이하에서 유리천이가 나타나지 않는 $Fe_{80}P_6C_{12}B_{12}$합금과 52K의 과냉각 액체영역을 갖는 $Fe_{73}P_{11}C_6B_4AI_4Ge_2$ glassy 합금을 열분석하였다. 등온결정화에 의한 열분석의 결과 JMA plot의 n값은 $Fe_{80}P_6C_{12}B_{12}$합금이 1.8-2.2이고 과냉각 액체영역을 갖는 $Fe_{73}P_{11}C_6B_4AI_4Ge_2$ 합금이 2.5-4.0으로서 후자의 경우가 열적으로 안정하였다. 결정화의 양상은 $Fe_{80}P_6C_{12}B_{12}$ 합금의 경우 핵생성속도가 일정할 때 확산율속에 의해 결정입자가 성장하는 반면 $Fe_{73}P_{11}C_6B_4AI_4Ge_2$ glassy합금의 경우 핵생성속도가 일정할 때 계면입자가 성장한다. $Fe_{73}P_{11}C_6B_4AI_4Ge_2$ 합금 및 $Fe_{80}P_6C_{12}B_{12}$ 합금의 결정화에 필요한 활성화에너지, 핵생성 및 성장에 필요한 활성화에너지는 각각 371, 353kJ/mol, 그리고 324, 301KJ/mol 및 301, 273KJ/mol로서 과냉각 액체영역을 갖는 합금이 열적으로 안정하다고 판단된다.

• 센서학회지
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• 제29권6호
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• pp.420-426
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• 2020

A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO₂ nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO₂ seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO₂ seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.