• Title/Summary/Keyword: Diffusion Film

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Improving the Performances of Dye-Sensitized Solar Cell by the Optimal $TiO_2$ Photoelectrode Thickness and Light-Scattering Enhancement (최적 $TiO_2$ 전극 두께 및 광산란 증가에 의한 염료감응형 태양광전지의 효율 개선)

  • Niu, Zeng Yuan;Kweon, Hyun Kyu;Park, Chang Yong
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.2
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    • pp.37-44
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    • 2014
  • In this study, the performance of dye-sensitized solar cells with different thickness of the photelectrode film was simulated by using the electron-diffusion differential model. Through this simulation, the relationships between the thickness of the photoelectrode film and the performances (open-circuit voltage, short-circuit current density, and overall photoelectric-conversion efficiency) of cells were understood and the performances with different thickness of the photoelectrede film were also examined. For considering the refractive index in the liquid electrolyte and exploring the scattering effect of titanium dioxide particles with different sizes using the Mie light-scattering theory, the highest scattering effect of each particles was found out and the optimal size of the titanium dioxide particle was determined for light scattering in the photoelectrode film of dye-sensitized solar cell. Through experiment, the mixed titanium dioxide cell was better than the single titanium dioxide cell and generated a higher overall conversion efficiency because the optimal titanium dioxide particles in the phoelectrode film as light scattering.

Planarization of the Diamond Film Surface by Using the Hydrogen Plasma Etching with Carbon Diffusion Process (수소 플라즈마 에칭과 탄소 확산법에 의한 다이아몬드막 표면의 평탄화)

  • Kim, Sung-Hoon
    • Journal of the Korean Chemical Society
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    • v.45 no.4
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    • pp.351-356
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    • 2001
  • Planarization of the free-standing diamond film surface as smooth as possible could be obtained by using the hydrogen plasma etching with the diffusion of the carbon species into the metal alloy (Fe, Cr, Ni). For this process, we placed the free-standing diamond film between the metal alloy and the Mo substrate like a metal-diamond-molybdenum (MDM) sandwich. We set the sandwich-type MDM in a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. The sandwich-type MDM was heated over ca. 1000 $^{\circ}C$ by using the hydrogen plasma. We call this process as the hydrogen plasma etching with carbon diffusion process. After etching the free-standing diamond film surface, we investigated surface roughness, morphologies, and the incorporated impurities on the etched diamond film surface. Finally, we suggest that the hydrogen plasma etching with carbon diffusion process is an adequate etching technique for the fabrication of the diamond film surface applicable to electronic devices.

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A HYBRID METHOD FOR HIGHER-ORDER NONLINEAR DIFFUSION EQUATIONS

  • KIM JUNSEOK;SUR JEANMAN
    • Communications of the Korean Mathematical Society
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    • v.20 no.1
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    • pp.179-193
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    • 2005
  • We present results of fully nonlinear time-dependent simulations of a thin liquid film flowing up an inclined plane. Equations of the type $h_t+f_y(h) = -{\in}^3{\nabla}{\cdot}(M(h){\nabla}{\triangle}h)$ arise in the context of thin liquid films driven by a thermal gradient with a counteracting gravitational force, where h = h(x, t) is the fluid film height. A hybrid scheme is constructed for the solution of two-dimensional higher-order nonlinear diffusion equations. Problems in the fluid dynamics of thin films are solved to demonstrate the accuracy and effectiveness of the hybrid scheme.

Optical Properties of $TiO_2/M/Ag/M/TiO_2$ Films with Different Diffusion Barrier Layers (확산방지막에 따른 $TiO_2/M/Ag/M/TiO_2$ 투명 열절연 박막의 광학적 성질)

  • 이경준;이진구;박주동;김진현;김영환;오태성
    • Journal of the Korean Vacuum Society
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    • v.5 no.2
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    • pp.147-155
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    • 1996
  • Optical properties of $TiO_2/M/Ag/M/TiO_2$ films have been changed with the diffusion barrier metal M. Optimum opticla properties of $TiO_2/M/Ag/M/TiO_2$ as the transparent heat mirror film, could be obtained with Ti among diffusion barrier metals of Ti, Cu, Zr and Al. $TiO_2/M/Ag/M/TiO_2$ film, which was fabricated by sputtering of 18 nm-thick $TiO_2$ and Ag, and 4nm-thick Ti, showed maximum transimittance of 89% at visible wavelength and infrared reflectance of 97% at wavelength of 3000 nm. Optical properties of this film was not degraded by Xenon-sunshine weather test for 240 hours. For specimens with barrier layers of Cu, Zr, and Al, degradation of optical properties by weather test was increased in a sequence of films with Cu, Zr, and Al barrier layers.

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Study on Anomalous Scaling Exponents for Molecular Thin Film Growth Using Surface Lateral Diffusion Model

  • Gong, Hye-Jin;Yim, Sang-Gyu
    • Bulletin of the Korean Chemical Society
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    • v.32 no.7
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    • pp.2237-2242
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    • 2011
  • Anomalous scaling behaviors such as significantly large growth exponent (${\beta}$) and small reciprocal of dynamic exponent (1/z) values for many molecular crystalline thin films have been reported. In this study, the variation of scaling exponent values and consequent growth behaviors of molecular thin films were more quantitatively analysed using a (1+1)-dimensional surface lateral diffusion model. From these simulations, influence of step edge barriers and grain boundaries of molecular thin films on the various scaling exponent values were elucidated. The simulation results for the scaling exponents were also well consistent with the experimental data for previously reported molecular thin film systems.

The influences of film density on hydration of MgO protective layer in plasma display panel

  • Lee, Jung-Heon;Eun, Jae-Hwan;Park, Sun-Young;Kim, Soo-Gil;Kim, Hyeong-Joon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.228-231
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    • 2002
  • We report the effect of density of thin films on moisture adsorption and hydration of MgO thin film, usually used as a protective layer in AC-PDP After hydration, lots of hemispherical shaped clusters, $Mg(OH)_2$, formed on the surface of MgO thin films. However clusters formed on low-density thin films were bigger than those on high-density films. From ERD spectra, it seemed that the concentration of hydrogen was very high in the region 20 nm from the surface of MgO thin film. The low-density thin film had more hydrogen than high-density thin film. From simulation results of ERD and RBS it was found that hydration reaction also occurred in the inner part of the film. So diffusion of Mg atoms from the inner part of the film to the surface and $H_2O$ molecules from the surface to the inner part of the film is important. And because low density thin film has many short paths for diffusion of Mg atoms and $H_2O$ molecules, low-density thin film is more hydrated. So to suppress hydration of MgO thin films, high-density thin film is needed.

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The Effect of Diffusion Barrier and thin Film Deposition Temperature on Change of Carbon Nanotubes Length (탄소나노튜브 길이 변화에 대한 확산방지층과 박막 증착 온도의 영향)

  • Hong, Soon-kyu;Lee, Hyung Woo
    • Journal of Powder Materials
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    • v.24 no.3
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    • pp.248-253
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    • 2017
  • In this study, we investigate the effect of the diffusion barrier and substrate temperature on the length of carbon nanotubes. For synthesizing vertically aligned carbon nanotubes, thermal chemical vapor deposition is used and a substrate with a catalytic layer and a buffer layer is prepared using an e-beam evaporator. The length of the carbon nanotubes synthesized on the catalytic layer/diffusion barrier on the silicon substrate is longer than that without a diffusion barrier because the diffusion barrier prevents generation of silicon carbide from the diffusion of carbon atoms into the silicon substrate. The deposition temperature of the catalyst and alumina are varied from room temperature to $150^{\circ}C$, $200^{\circ}C$, and $250^{\circ}C$. On increasing the substrate temperature on depositing the buffer layer on the silicon substrate, shorter carbon nanotubes are obtained owing to the increased bonding force between the buffer layer and silicon substrate. The reason why different lengths of carbon nanotubes are obtained is that the higher bonding force between the buffer layer and the substrate layer prevents uniformity of catalytic islands for synthesizing carbon nanotubes.

Diffusion characterization of Doped Oxide and Nitride Film (도핑한 산화막 및 질화막의 확산특성)

  • 이종덕;김원찬
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.22 no.2
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    • pp.97-105
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    • 1985
  • Phosphorus and boron diffusion from doped PECVD oxide films into silicon have been studied. CVD PSG was also prepared to parallelly compare the diffusion characteristics of CVD PSG with that in PECVD PSG, The phosphorus diffusion experiments were performed in N2 and O2 ambient at the temperatures of 100$0^{\circ}C$, 105$0^{\circ}C$ and 110$0^{\circ}C$ The parameters of boron diffusion have been investigated from the doped film prepared by changing B2 H6 flow rate and deposition temperature. The diffusivities and diffusion profiles of the dopant into silicon were calculated by applying Barry's model using the measured parameters such as diffusion depth and surface concentration.

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Use of a capacitance voltage technique to study copper drift diffusion in low-k polyimide (C-V Technique을 이용한 low-k polyimide로의 구리의 drift diffusion 연구)

  • Choi, Yong-Ho;Lee, Heon-Yong;Kim, Jee-Gyun;Kim, Jung-Woo;Kim, Yoo-Kyuong;Park, Jin-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05c
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    • pp.137-140
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    • 2003
  • Cu+ ions drift diffusion in different dielectric materials is evaluated. The diffusion is investigated by measuring shift in the flatband voltage of capacitance/voltage measurements on Cu gate capacitors after bias temperature stressing. At a field of 1.lMV/cm and temperature $200^{\circ}C$, $250^{\circ}C$, $300^{\circ}C$ for 1H, 2H, 5H. The Cu+ ions drift rate of polyimide$(2.8{\leq}k{\leq}3.2)$ is considerably lower than thermal oxide. Also Cu+ drift rate of polyimide is similar to PECVD oxide. But, polyimide film is even more resistant to Cu drift diffusion and thermal effect than Thermal oxide, PECVD oxide: This results got a comparative reference. The important conclusion is that polyimide film is strongly dielectric material by thermal effect and Cu drift diffusion.

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Limit-current type zirconia oxygen sensor with porous diffusion layer (다공성 확산층을 이용한 한계전류형 지르코니아 산소센서)

  • Oh, Young-Jei;Lee, Chil-Hyoung
    • Journal of Sensor Science and Technology
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    • v.17 no.5
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    • pp.329-337
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    • 2008
  • Simple, small and portable oxygen sensors were fabricated by tape casting technique. Yttria stabilized zirconia containing cordierite ceramics (YSZC) were used as a porous diffused layer of oxygen in pumping cell. Yttria stabilized zirconia (YSZ) solid electrolyte, YSZC porous diffusion layer and heater-patterned ceramic sheets were prepared by co- firing method. Limit current characteristics and the linear relationship of current to oxygen concentration were observed. Viscosity variation of the slurries both YSZ and YSZC showed a similar behavior, but micro pores in the fired sheet were increased with increasing of the cordierite amount. Molecular diffusion was dominated due to the formation of large pores in porous diffusion layer. The plateau range of limit current in porous-type oxygen sensor was narrow than the one of aperture-type oxygen sensor. However limit current curve was appeared in porous-type oxygen sensor even at the lower applied voltage. The plateau range of limit-current was widen as increasing the thickness of porous diffusion layer of the YSZ containing cordierite. Measuring temperature of $600{\sim}650^{\circ}C$ was recommended for limit-current oxygen sensor. Porous diffusion layer-type oxygen sensor showed faster response than the aperture-type one and was stable up to 30 days running without any crack at interface between the layers.