• Electrical & Electronic Materials
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• v.10 no.9
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• pp.922-929
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• 1997

As the size of semiconductor devices shrinks in the horizontal as well as vertical dimension it is difficult to estimate the transport-velocity of electron because they drift in non-equilibrium with a few scattering. In this paper HYbrid Monte Carlo simulator which employs the drift-diffusion model for hole-transport and Monte Carlo model for electron-transport in order to reduce the simulation time and increase the accuracy as well has been developed and applied to analyze the electron-transport in InAlAs/InGaAs HBT which is attractive for an ultra high speed active device in high speed optical fiber transmission systems in terms of the velocity and energy distribution as well as cutoff frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.40-45
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• 1994

The TCAD(Technology Computer Aided Design) software tool is a popular name to be able to simulate the semiconductor process and device circuit. We have developed a two-dimensional TCAD software tool included an editor, parser, each process unit, and 2D, 3D graphic routine that is Integrated Environment. The initial grid for numerical analysis is automatically generated with the geometric series that use the user default(given) line and position separated with grid interval and the nodes corresponding to each mesh point stoic the all the possible attribute. Also, we made a data structure called PIF for input or output. Methods of ion implantation in this paper arc Monte Carlo, Gaussian Pearson and Dual-Pearson. Analytical model such as Gaussian, Pearson and Dual-Pearson were considered the multilayer structure and two-dimensional tilted implantation. We simuttaneously calculated the continuity equation of impurity and point defect in diffusion simulation. Oxidation process was simulated by analytical ERFC(Complementary Error Function) model for local oxidation.

• Journal of Korea Society of Digital Industry and Information Management
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• v.12 no.1
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• pp.13-26
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• 2016

Service and technology for the future hyper-connected society, which is every information receive through the mobile internet, will be an Internet of Things. Thus, it is mandatory to derive key standardization work item and establish strategy for the global business with the standardization of device and service platform by the application service. In this study, by analyzing the domestic and international market trends, state of technical development, and standardization of technology, we identified the open platform is the stepping stone for achieving the goal which is establishing the virtuous circulation of IoT ecosystem. Also, we defined emphasized key standardization work item for achieving the open platform are network, server, access authentication, billing system, and software platform. After that, we proposed future strategy direction of standardization. This research could be contribute to the IoT service diffusion by realizing IP communication among low power wireless terminals and implementing light-weight standard internet protocol.

• Smart Media Journal
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• v.2 no.3
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• pp.54-61
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• 2013

NFC is a Near Field wireless Communication technology, comes to the fore as an important technology of Mobile Payment System with supply of devices and diffusion of services. Because of the fact that the NFC retail payment services, ticketing, smart cards are able to operate in one device, it(NFC Technology) can make disclosure of personal information and security risks. Thus, the problem of security in NFC technology is essential, and the need for research on security threats are increasing. In this paper, we wil analyze for NFC's vulnerabilities and security technology.

• Journal of the Korean Ceramic Society
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• v.55 no.4
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• pp.325-336
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• 2018

Perovskite solar cells (PSCs) are a new class of photovoltaic devices, which have attracted significant attention due to their remarkable optoelectrical properties, including high absorption coefficients, high carrier mobilities, long carrier diffusion lengths, tunable bandgaps, low cost, and facile fabrication. PSCs have reached efficiencies of 22.70% and 18.36% on rigid fluorine-doped tin oxide and poly(ethylene terephthalate) substrates, respectively; these are comparable to those of single-crystal silicon and copper-indium-gallium-selenium solar cells. Over the past eight years, the photo conversion efficiency of PSCs has been significantly improved by device-architecture adjustments, and absorber and electron/hole transport layer optimization. Each layer is important for the performance of PSCs; hence, we discuss achievements in flexible perovskite solar cells (FPSCs), covering electron/hole-transport materials, electrode materials. We give a comprehensive overview of FPSCs and put forward suggestions for their further development.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12S
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• pp.1255-1260
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• 2003

In order to reduce driving power consumption, we propose and fabricate a new structure of asymmetric SOI 1${\times}$2 thermo-optic switch that has a back side silicon trenched structure. Compared to conventional SOI thermo optic switches without heat sink structure, it shows an improvement of switching power reduction from about 4 watt to 1.8 watt without sacrificing cross talk of about 20 ㏈ at the light wavelength of 1.55 $\mu\textrm{m}$. Here we also described the main design consideration and fabrication procedure for the proposed device.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1630-1632
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• 1997

We have investigated activation phenomena of implanted ions on silicon wafers using microwave(2.45GHz). It is found that the higher concentration of impurities makes the better activation effects by microwave annealing. We have exposed poly-Si TFTs by microwave in order to anneal and improved the device performance. Microwave activates source/drain ions and lowers the contact resistance so that the current of the poly-Si TFTs increases. In addition, the leakage current of hydrogen passivated poly-Si TFTs is decreased after microwave annealing, due to the diffusion of hydrogen ions and curing the defects in the poly-Si active channel.

• The Journal of the Korean dental association
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• v.55 no.11
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• pp.800-807
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• 2017

Ultrasonography is one of the most common diagnostic tools in medical imaging with non-invasive and non-radiation loaded characteristics. In the field of dentistry, especially for periodontology, high frequency ultrasonic device can be used for several purposes such as evaluating gingival thickness, identifying the level of alveolar bone, measuring the volume of mucosa of donor site for soft tissue graft and so on. According to recent studies, it was demonstrated that ultrasonic diagnosis had both accuracy and repeatability comparable to conventional diagnostic tools. However, improvement and development of intra-oral probe suitable for adpatation to gingiva and palatal mucosa, are considered as prerequisites for diffusion of ultrasonic diagnosis in periodontology.

• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.97-101
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• 2009

A new approach was applied to examine the charge generation and transport in organic photoconductive devices by Monte‐Carlo simulation utilizing multiple site interactions of carriers with all other charges within Coulomb radius. Stepwise generation frame was considered first by a charge separation process that was counted in two separate transactions, i.e., hopping against physical decay and dissociation against recombination. Thereafter, diffusion/ drifting process of free carriers was counted to follow. This method enables to examine readily the photocurrent generated alongside the charge generation efficiency. The field and temperature dependences of the efficiency and photocurrent were obtained comparable to Onsager’s and experimental data.

• Journal of Magnetics
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• v.14 no.1
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• pp.23-26
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• 2009

Spin injection from a ferromagnet into an n-doped $In_{0.53}Ga_{0.47}As$ channel was electrically detected by a ferromagnetic detector. At T = 20 K, using non-local and local spin-valve measurements, a non-local signal of $2\;{\mu}V$ and a local spin valve signal of 0.041% were observed when the bias current was 1 mA. The band calculation and Shubnikov-de Haas oscillation measurement in a bulk channel showed that the gate controlled spin-orbit interaction was not large enough to control the spin precession but it could be a worthy candidate for a logic device using spin accumulation and diffusion.