• Journal of the Korean institute of surface engineering
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• v.20 no.2
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• pp.43-48
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• 1987

Chromium and Aluminum films were deposited by evaporation technique in $3{\times}10^{-6}$ mbar vacuum level at the incident angles ranging from $0^{\circ}\;to\;60^{\circ}$ with various evaporation rates. We measured the sheet resistances and light transmittances, and observed diffraction patterns by TEM of these films. Relations among diffraction patterns, sheet resistances and light transmittances were discussed. The sheet resistances and light transmittances were shown the lowest values at 25$^{\circ}C$ of incident angle for all kinds of evaporation rates.

• Archives of Pharmacal Research
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• v.12 no.1
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• pp.52-57
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• 1989

The structure of cinmetacin was determined by single crystal X-ray diffraction analysis. The compound was recrystallized from a mixture of acetone and water in orthorhombic, space group $P2_12_12_1$, with Z=4, a=35.681(8), b=9.482(2), c:5.071(1) ${\AA}$, $D_x=1.352 g/cm^3$, and $D_m=1.35g/cm^3$. The structure was solved by direct method and refined by least-squares procedure to the final R value of 0.036 for 1441 observed reflections ($F{\geq}3{\sigma}(F)$). The carboxyl group of the molecule is nearly perpendicular to the indole ring. The dihedral angle between indole ring and phenyl group is $64.5^{\circ}$. The molecules are linked together via O(1)-H ----O(3) hydrogen bonds, and arranged along 2-fold screw axis in the crystal. The intermolecular contacts are the normal van der Waals' forces.

• Journal of the Korean institute of surface engineering
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• v.45 no.3
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• pp.106-110
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• 2012

Oblique angle deposition (OAD) is a physical vapor deposition where incident vapor flux arrives at non-normal angles. It has been known that tilting the substrate changes the properties of the film, which is thought to be a result of morphological change of the film. In this study, OAD has been applied to prepare single and multilayer TiN films by cathodic arc deposition. TiN films have been deposited on cold-rolled steel sheets and stainless steel sheet. The deposition angle as well as substrate temperature and substrate bias was changed to investigate their effects on the properties of TiN films. TiN films were analyzed by color difference meter, scanning electron microscopy, nanoindenter and x-ray diffraction. The color of TiN films was not much changed according to the deposition conditions. The slanted and zigzag structures were observed from the single and multilayer films. The relation between substrate tilting angle (${\alpha}$) and the growth column angle (${\beta}$) followed the equation of $tan{\alpha}=2tan{\beta}$. The indentation hardness of TiN films deposited by OAD was low compared with the ones prepared at normal angle. However, it has been found that $H^3/E^2$ ratio of 3-layer TiN films prepared at OAD condition was a little higher than the ones prepared at normal angle, which can confirm the robustness of prepared films.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.88-92
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• 1995

Higly pure silicon crystals with an almost perfect lattice structure constityte a powerful metrological tool. The streographic standard prohection for the (111) orientation of diamond structure found by the Laue method shows angles between net planes of 60°. This value is known to be certain to some 10-8 rad. We have made a six-faced silicon polygon, and the (220) lattice planes of the polygon act as a reference angular standard. The information of angles between lattice planes could be taken by the X-ray diffraction. The angle of the rotary encoder have been calibrated using the silicon angle standard. The X-ray optics was double crystal arrangement.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.97-101
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• 2005

ZnO thin films were grown at different plume-substrate (P-S) angles of 90$^{\circ}$ (on-axis PLD), 45$^{\circ}$ and 0$^{\circ}$ (off-axis PLD) using pulsed laser deposition. The x-ray diffraction pattern exhibiting a dominant (002) and a minor (101) peak of ZnO indicates all films were strongly c-axis oriented. By observing of (002) peak, the FWHMs of ZnO (002) peaks decreased and c-axis lattice constant approached the value of bulk ZnO as P-S angle decreased. Whereas the carrier concentration of ZnO thin film deposited at P-S angle of 90$^{\circ}$ was ~ 10$^{19}$ /cm$^{3}$, the Hall measurement of ZnO thin films deposited at P-S angles of 0$^{\circ}$ and 45$^{\circ}$ was impossible due to the decrease of the carrier concentration by the improvement of stoichiometry and crystalline quality. By decreasing P-S angle, the grain size of the films and the UV intensity investigated by photoluminescence (PL) increased and UV peak position showed red shift. The improvement of properties in ZnO thin films deposited by off-axis technique was due to the decrease of repulsive force between a substrate and the particle in plume and the relaxation of supersaturation.

• Korean Journal of Materials Research
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• v.25 no.1
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• pp.54-59
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• 2015

Glancing angle deposition (GLAD) is a powerful technique to control the morphology and microstructure of thin film prepared by physical vapor deposition. Chromium (Cr) thin films were deposited on a polymer substrate by a sputtering technique using GLAD. The change in thickness and Vickers microhardness for the samples was observed with a change in the glancing angle. The adhesion properties of the critical load (Lc) by a scratch tester for the samples were also measured with varying the glancing angle. The critical load, thickness and Vickers microhardness for the samples decreased with an increase in the glancing angle. However, the thickness of the Cr thin film prepared at a $90^{\circ}$ glancing angle showed a relatively large value of 50 % compared to that of the sample prepared at $0^{\circ}$. The results of X-ray diffraction and scanning electron microscopy demonstrated that the effect of GLAD on the microstructure of samples prepared by sputter technique was not as remarkable as the samples prepared by evaporation technique. The relatively small change in thickness and microstructure of the Cr thin film is due to the superior step-coverage properties of the sputter technique.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.6
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• pp.40-45
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• 2000

교정은 모든 측정분야에서 어렵고 까다로운 주제인데, 특히 정전센서, 레이저간섭계, AFM, STM 등을 포함하는 나노메트롤로지(nanometrology : 나노측정) 분야에서는 그러하다. 나노측정에서는 전체 측정범위가 센서들의 한계분해능 값과 비슷한데, 이러한 측정에서 높은 소급성을 유지하기는 매우 어렵기 때문이다.(중략)

• Proceedings of the KIEE Conference
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• 2004.07e
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• pp.116-119
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• 2004

In this paper, a novel encoder of digital and analog hybrid type is proposed. It is shown that from this experiment a high-resolution angle measurement device can be designed by a low cost incremental encoder.

• Korean Journal of Crystallography
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• v.1 no.2
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• pp.115-125
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• 1990

We have investigated bulk and hetero-epitaxial growth of GaAs single crystal. Various growth techniques such as HB, HZM, and VGF for high quality bulk GaAs were successfully developed by appling the specially designed DM(direct monitoring) furnace. Al GaAs/GaAs superlattice structure and In(x)Ga(1-x) As/GaAs epilayers were also grown by MOCVD and VPE, respectively. The characterization of GaAs single crystals and epilayers was made by X-ray diffraction, Hall effect, PL, chemical etching and angle lapping technique.

• Bulletin of the Korean Chemical Society
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• v.17 no.1
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• pp.66-68
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• 1996

It has been found that mesoporous structures of MCM-41 and MCM-48 disintegrate readily in distilled water around 370 K, while the structures can be stable in 100%-steam of 1 atmospheric pressure at much higher temperatures around 820 K. Thus, the structure disintegration is thermodynamically more favorable in water than under the steaming condition. X-ray powder diffraction and magic angle spinning 29Si NMR spectroscopy indicate that the disintegration of the mesoporous structures in water occurs due to silicate hydrolysis.