• Journal of Electrical Engineering and Technology
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• 제12권5호
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• pp.1697-1708
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• 2017

This paper proposes an algorithm for the differential protection of an Indirect Symmetrical Phase Shift Transformer (ISPST) by considering the different behaviors of the compensated differential current under internal fault and magnetizing inrush conditions. In this algorithm, a criterion function is defined which is based on the difference of amplitude of the wavelet transformation over a specific frequency band. The function has been used for the discrimination between three phase magnetizing inrush and internal fault condition and requires less than a quarter cycle after disturbance. This method is independent of any coefficient or threshold values of wavelet transformation. The merit of this algorithm is demonstrated by the simulation of different faults in series and excitation unit and magnetizing inrush with varying switching conditions on ISPST using PSCAD/EMTDC. Due to unavailability of in-field large interconnected transformers for such a large number of destructive tests, the results are further verified by Real Time Digital Simulator (RSCAD/RTDS). The proposed algorithm has been compared with the conventional harmonic restraint based method that justifies the application of wavelet transform for differential protection of ISPST. The proposed algorithm has also been verified for different rating of ISPSTs and satisfactory results were obtained.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.811-813
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• 2003

We investigated the electrical properties of self-assembled (4,4'-Di(ethynylphenyl)-2'-nitro-1-thioacetylbenzene), which has been well known as a conducting molecule having possible application to molecular level negative differential resistance(NDR)[1]. Generally, the phenomenon of NDR can be characterized by the decreasing current with the increasing voltage[2]. To deposit the SAM layer onto gold electrode, we transfer the prefabricated nanopores into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured the voltage-current properties and confirmed the negative differential resistance properties of self-assembled organic thin film and measured, using Scanning Tunneling Microscopy(STM).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.760-761
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• 2011

Ground differential relay is used to provide fast, sensitive, and selective protection for the wye connected and grounded electrical power equipment such as generators, power transformers, and grounding transformers. The ground differential protection only protects the ground faults within the protection zone, so that it can't protect the line-to-line fault. This paper proposes the algorithm to provide the protection for the line-to-line fault through the ground differential protection. The proposed algorithm detects the line-to-line fault of transformer using the comparison between the positive and the negative current, when the ground differential relay dose not operate. The performance of the algorithm is verified using a PSCAD/EMTDC simulator under various case studies.

• Journal of information and communication convergence engineering
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• 제9권1호
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• pp.11-15
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• 2011

A Differential line inductor is proposed for a differential power amplifier. The proposed differential line inductor is composed of two conventional line inductors rearranged to make the current direction of the two line inductors identical. The proposed line inductor is simulated with a 2.5-D and a 3-D EM simulator to verify its feasibility with the substrate information in a 0.18-${\mu}m$ RF CMOS process. The inductances of various line inductors implemented with printed circuit boards were measured. The feasibility of the proposed line inductor was successfully demonstrated.

• Journal of Electrical Engineering and Technology
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• 제13권1호
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• pp.78-88
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• 2018

The liberalization of electricity market and environmental concerns are the major driving forces for the development of Distributed Generation (DG). The mode of grid-connected wind power generation is becoming popular and has matured as a reliable DG technology. The voltage generated by the wind generator is stepped up to the higher voltage by the transformers before connecting to the grid. Operating algorithm of the differential relays for transformer protection used in the wind farms need to be modified to take care of the dynamic nature of fault current caused by the intermittent nature of the wind power. An algorithm for the differential relay is proposed in which dual slope characteristics are adjusted with varying fault level situation according to the wind generator in service as well as with the wind speed. A case study conducted for a typical wind farm shows that the proposed method avoids mal-operation of the differential relay in varying wind power conditions.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.667-670
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• 1998

Novel bipolar transresistance amplifier(TRA) for high-accuracy current-mode signal processing is described. The TRA consists of two current follower for the current inputs, a current summer for curent-differential, and a voltage follower for the voltage output. The simulation results show that the impedence of the current input and the voltage output is 0.5 $\Omega$ and the 3-dB cutoff frequency when used as a current to voltage converter extends beyond 40 MHz.

• 전자공학회논문지SC
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• 제37권1호
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• pp.40-48
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• 2000

저전압 저전력 신호 처리를 위한 새로운 바이폴라 선형 트랜스컨덕터와 이것을 이용한 연산 트랜스컨덕턴스 증폭기를 제안한다. 이 트랜스컨덕터는 이미터 디제네레이션 저항을 갖는 npn 차동쌍과 이 차동쌍에 직렬로 연결된 pnp 차동쌍으로 구성된다. 이 구성에서 넓은 선형성과 온도 안정성을 위해 pnp 차동쌍의 바이어스 전류는 npn 차동쌍의 출력 전류를 사용하고 있다. 제안한 OTA는 선형 트랜스컨덕터와 세 개의 전류 미러를 갖는 트랜스리니어 전류 셀로 구성된다. 제안된 트랜스컨덕터는 종래의 그것과 비교하였을 때 우수한 선형성과 저전압 저전력 특성을 갖는다. 실험 결과, 50 ${\mu}S$의 트랜스컨덕턴스를 갖는 트랜스컨덕턴스가 공급 전압 ${\pm}$3V에서 입력 전압 범위가 -2V에서 +2V 사이에 ${\pm}$0.06% 보다 작은 선형 오차를 갖는다. 전력 소비는 2.44 mW이다. 25 ${\mu}S$의 트랜스컨덕턴스를 갖는 OTA 시작품을 바이폴라 트렌지스터 어레이를 가지고 만들었다. OTA의 선형성은 제안한 트랜스컨덕터와 같다. OTA 회로는 또한 0.5 S/A의 감도로 바이어스 전류 변화에따라 4-디케이드(decade)에 걸쳐서 선형적인 트랜스컨덕턴스를 갖는다.

• Journal of Power Electronics
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• 제15권5호
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• pp.1295-1304
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• 2015

In this paper, an approach to extend the life of lead-acid batteries through the elimination of sulfation with "rest time" using the pulse current of a conventional DPV (Differential Pulse Voltammetry) method is discussed. A new rest time without "0" current in "saw-tooth" pattern pulses is proposed to overcome the "0" current (blackout period), which is a shortcoming of DPV. This will enable the proposed method to be used in the loaded state. In the proposed approach, ESSs (Energy Storage Systems) were discharged for 5 h twice per day for 6 months on weekdays. To observe the changes in the lifespan of the systems, for the same period, the changes in the impedances of lead-acid batteries which were being charged e without charging and discharging were measure and compared. This study is focused on determining the effectiveness of lead-acid batteries as ESSs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 A
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• pp.444-446
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• 2005

This paper describes a current differential relaying algorithm for power transformers with an advanced compensation algorithm for the secondary current of CTs. The comparative study was conducted with and without the compensating algorithm. The algorithm can reduce the operating time of the relay in the case of an internal fault and improve security for external faults. The performance of the proposed algorithm was investigated when the C100 CT, a quarter of the rated CT(C400), is used.

• KIEE International Transactions on Electrophysics and Applications
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• 제2C권5호
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• pp.258-261
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• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.