• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.852-858
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/$SiO_2$/Sisubstrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$ thin film showed the lowest value of 5.13$\times 10^{-7} A/{cm}^2$ at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_{3}$thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}Tio_{3}$ thin films were 333, 0.0095, and 31.1%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.565-568
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• 2004

An alkoxide-based sol-gel method was used to fabricate $Ba_{0.6}Sr_{0.4}TiO_3$ thin films doped by Bi from 5 to 20 mol% on a Pt/Ti/SiO2/Si substrate. The structural and dielectric properties of BST thin films were investigated as a function of Bi dopant concentration. The dielectric properties of the Bi doped BST films were strongly dependent on the Bi contents. The dielectric constant and dielectric loss of the films decreased with increasing Bi content. However, the leakage current density of the 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin film showed the lowest value of 5.13 10-7 at 5 V. The figure of merit (FOM) reached a maximum value of 32.42 at a 10 mol% Bi doped $Ba_{0.6}Sr_{0.4}TiO_3$ thin films. The dielectric constant, loss factor, and tunability of the 10 mol% Bi doped $BBa_{0.6}Sr_{0.4}TiO_3$ thin films were 333,0.0095, and 31.1%, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.776-779
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• 2004

The dielectric and electrical characteristics of Ce doped (Ba0.6Sr0.4)TiO3 (BST) thin films were investigated as a function of Ce content. Both atomic force microscopy (AFM) and x-ray diffraction (XRD) analysis showed that increasing the Ce doping ratio causes the decrease in grain size while the surface remains smooth and crack-free. The dielectric properties of the Ce doped BST films were found to be strongly dependent on the Ce contents. The dielectric constant and dielectric loss of the BST films decreased with increasing Ce content. However, it was also found that, compared with undoped films, the increase of Cecontent improves the leakage-current characteristics. The improvement of the electrical properties of Ce-doped BST films may be related to the decrease in the concentration of oxygen vacancies. The figure of merit (FOM) reached the maximum value of 48.9 at the 1 mol % of Cedoping. The dielectric constant, loss factor, and tunability of the 1 mol% Ce doped Ba0.6Sr0.4TiO3 thin films were 320, 0.011, and 46.3%, respectively.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.7-9
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• 2006

$(BaSr)TiO_3$ thick films were prepared by tape casting method using $BaTiO_3$ and $SrTiO_3$ powder slurry in order to investigate dielectric properties and low temperature sintering. Sintering density was $5.7\;g/cm^3$ and the BST sample exhibited the maximum dielectric constant, tunability at temperatures near phase transition point. The dielectric constant was increased and curie temperature was shifted to higher temperature with increasing of annealing temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.610-615
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• 2022

BaTiO₃ is one of the ferroelectric materials with excellent dielectric properties such as high dielectric constant, low dielectric loss, and is widely used for the manufacturing of capacitors, piezoelectric converters, microsensors, and ferroelectric memories. Inkjet printing is a technology which uses digital and contactless methods which significantly improves flexibility associated with material and structural design, reducing manufacturing costs. Therefore, the top and bottom electrodes, BaTiO₃ ink, and photocurable resin were all printed by an inkjet to produce a BaTiO₃ capacitor. The properties of the printed thin film were analyzed. It was confirmed that the photocurable resin ink was well-infiltrated between the BaTiO₃ powder particles printed by inkjet. The dielectric properties of the capacitor such as dielectric constant which varies in accordance with frequency, polarization and tunability that changes with voltage, were measured.

• Journal of Information Display
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• v.11 no.2
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• pp.84-90
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• 2010

This paper presents the effects of a dielectric layer and an electrolyte on the driving performance of an electrowetting on dielectric (EWOD)-based liquid lens. The range of tunable focal length of the EWOD-based liquid lens was highly dependent on the conditions of the dielectric layer, which included an inorganic oxide layer and an organic hydrophobic layer. Moreover, experiments on the physical and optical durability of electrolyte by varying temperature conditions, were conducted and their results were discussed. Finally, the lens with a truncated-pyramid silicon cavity having a sidewall dielectrics and electrode was fabricated by anisotropic etching and other micro-electromechanical systems (MEMS) technologies in order to demonstrate its performance. The lens with $0.6-{\mu}m$-thick $SiO_2$ layer and 10 wt% LiCl-electrolyte exhibited brilliant focal-length tunability from infinity to 3.19 mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.31-34
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• 2003

($Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$ (BSCT) (x=0.10, 0.15, 0.20) powder, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on alumina substrates using the BSCT paste. The structural and the electrical properties were investigated for various composition ratio and sintering temperature. BSCT thick film thickness, obtained by four printings, was approximately 110 ~ 120 ${\mu}m$. The Curie temperature and dielectric constant at room temperature were decreased with increasing Ca content. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) specimen, which was sintered at $1420^{\circ}C$ and measured at 1MHz, were about 910, 0.46% and 9.28% at 5kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.115-116
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• 2006

Dielectric PST (20/80) / PST (80/20) heterolayered thin films structures were created by a consequent deposition of the PST (20/80) and PST (80/20) thin films on the $Pt/Ti/SiO_2/Si$ substrate using alkoxide-based sol-gel method. Both structural and dielectric properties of heterolayered PST thin films were investigated for the tunable microwave device applications. As the number of coating increases, the lattice distortion decreased. It can be assumed that the lower PST layer affects a nucleation site or a seeding layer for the formation of the upper PST layer. The dielectric constant, dielectric loss and tunability of the PST-6 heterolayered structure measured at 100 kHz were 399, 0.022 and 57.9%, respectively. All these parameters showed an increase with increasing number of coatings due to the decrease in lattice distortion.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.15-17
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• 2005

In this study, tunable dielectric materials are important for resonator, variable capacitor, phased array antenna and other devices application. In this paper, Dielectric constant increased and tuning range increased with the increased of $BaSrTiO_3/Li_{2}CO_{3}$ content, which probably can be explained by the substitution of Ba3+, Li1+ on BaTiO3 lattice. The tunability and dielectric loss of the $BaSrTiO_2/Li_{2}CO_{3}$ thick film, sintered at $1150^{\circ}C$, were about 43 % and 0.234 at 10$\sim$15 MHz, respectively. In case of BaSrTi/MgO, Dielectric constant decreased and tenability increased with the added of $BaSrTiO_3/MgO$. The ferroelectrics properties were distinct when adding Li to BST ceramic thick film, and paraelectrics pattern was distinct when adding Mg.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2013-2015
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• 2005

In this paper, Effect of $BaSrTiO_3/Li_2CO_3$ on low temperature sintering and dielectric property of thick films has been investigated for variable capacitor on high frequency. The thick films were fabricated by the tape casting and then the structural and dielectric properties as a function of an addition composition ratio and sintering temperature were studied. For the thick film sintered at $1050^{\circ}C$, it was densified to 96% of $BaSrTiO_3$ theoretical density by the addition of 10 $wt{\cdot}%$ $BaSrTiO_3/Li_2CO_3$. Dielectric constant increased and Curie temperature lowered with the increased of $BaSrTiO_3/Li_2CO_3$ content, which probably can be explained by the substitution of $Ba^{3+},Li^{1+}$ on $RaTiO_3$ lattice. The tunability and dielectric loss of the $BaSrTiO_3/Li_2CO_3$ thick film, sintered at $1350^{\circ}C$, were about 26% and 0.234 at $10{\sim}15MHz$, respectively.