• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1504-1506
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• 2002

$(Ba_{0.6-x}-Sr_{0.4}Ca_x)TiO_3$ (x=0.10, 0.15, 0.20, y=$0.0{\sim}3.0$) powders were fabricated by the sol-gel method, and BSCT thick films were fabricated by the silk-screen printing method. Their structural and dielectric properties were investigated with variation of composition ratio. All BSCT thick films showed a homogeneous structure without presence of the second phase. BSCT film thickness, obtained by three cycle of printing, was approximately $80{\mu}m$. The dielectric constant and dielectric loss of the 3-coated BSCT(50/40/10) thick film were approximately 1700 and 0.07%, respectively.

• Macromolecular Research
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• 제14권6호
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• pp.617-623
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• 2006

In order to achieve an oriental lacquer (OL) film with a thick consistency, UV-curable silicone acrylate (SA) was added to OL by a dual curing process. The addition of 5 wt% UV-curable SA to the OL fomulation enabled the preparation via a single drying step of a $77{\mu}m-thick$ film exhibiting excellent surface properties. FTIR-ATR was used to investigate the effect of UV-curable SA on the behavior of film formation during curing, and the relaxation behavior of the produced films was investigated by dielectric spectroscopy. Dielectric properties were measured in the frequency range $10^{-2}-10^5\;Hz$ at various temperatures between -100 and $200^{\circ}C$. The results demonstrated that OL modified by UV-curable SA has a higher glass transition temperature and stronger secondary relaxation at a lower temperature than the conventional OL system. The OL film modified with UV-curable SA was presumed to be harder at the surface and tougher than conventional OL film.

• 한국전기전자재료학회논문지
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• 제19권7호
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• pp.667-672
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• 2006

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT(52/48)) thick films were fabricated by the screen-Printing method on the alumina substrates, and $PbTiO_3$ (PT) Precursor solution, which prepared by sol-gel method, was spin-coated on the PZT(52/48) thick films to obtain a densification. Its structural and electrical properties of the PZT(52/48) thick films with the treatment of PT precursor solution coating were investigated. The particle size of the thick films was increased with increasing the number of coatings and the thickness of the PZT-6 (6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PT sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 475 and 2 %, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $32.6{\mu}C/cm^2$, 15 kV/cm and 60 kV/cm, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 D
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• pp.2209-2210
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coaled on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field wore 16.48 ${\mu}C/cm^2$ and 35.48kV/cm, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 A
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• pp.577-578
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at 650f showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were 16.48${\mu}C/cm^2$ and 35.48kV/cm, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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• pp.1243-1244
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1703-1704
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• 2006

In this paper, PZT(20/80) thick films were fabricated by the screen-printing method. And the PZT(80/20) coating solution was synthesized by the sol-gel method. PZT(20/80) thick films were screen-printed on the alumina substrates. PZT(80/20) thin film was spin-coated on the PZT(20/80) thick films to obtain densification. And the structural and electrical properties of PZT thick films were investigated with variation of sintering temperature. The PZT specimen sintered at $650^{\circ}C$ showed good relative dielectric constant of 219 and dielectric loss of 2.45%. Also the remanent polarization and the coercive field were $16.48{\mu}C/cm^2$ and 35.48kV/cm, respectively.

• 한국전기전자재료학회논문지
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• 제23권7호
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• pp.521-524
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• 2010

Low loss perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. In this study, we fabricated Ag(Ta,Nb)$O_3$ thick films on the $Al_2O_3$ substrates by the screen printing method. The Ag(Ta,Nb)$O_3$ powders were fabricated by the mixed oxide method. The sintering temperature and time were $1150^{\circ}C$ and 2 hrs, respectively. The results of XRD analysis showed that the specimens employed in this study had the pesudo cubic structure. The dielectric permittivity and loss tangent of the films have been characterized from 1 kHz to 1 MHz. Also the dielectric permittivity and loss tangent were measured from 303 K to 393 K. The electrical properties of the film are also discussed.

• 한국결정성장학회지
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• 제9권1호
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• pp.50-54
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• 1999

플라즈마 디스플레이는 후막기술을 이용하여 화면의 크기를 늘리는 것이 쉽기 때문에 고선명 TV의 가장 유력한 후보이다. 본 연구에서는 플라즈마 디스플레이용 유전체의 조건을 만족하는 lead borosilicate 유리를 이용한 투명 유전체 재료를 개발하였다. 또한 이 유리를 이용하여 페이스트를 제조하였다. 페이스트는 스크린 프린팅에 적합한 요변성을 나타내었고, 입자 크기가 작아질수록 더욱 강한 요변성을 나타내었다. 열처리 후 후막의 파단면을 전자현미경으로 관찰하였다. 후막의 기공은 서로 다른 크기의 평균입경을 갖는 powder를 사용함으로써 제거 될 수 있었다. 소성된 후막은 좋은 융착 특성을 나타내었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1103-1106
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• 2006

We have presented a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_2O_3$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_2O_3$ as both a top gate dielectric and a passivation layer is reported. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_2O_3$ as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure has been successfully understood by an analysis of electrostatic potential.