• 한국반도체및디스플레이장비학회:학술대회논문집
• /
• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
• /
• pp.34-46
• /
• 2002

Si-O-C-H films with a low dielectric constant were deposited on a p-type Si(100) substrate using a mixture gases of the bis-trimethylsilyl-methane (BTMSM) and oxygen by an inductively coupled plasma chemical vapor deposition (ICPCYD). High density plasma of about $~10^{12}\textrm{cm}^{-3}$ is obtained at low pressure (<400 mTorr) with rf power of about 300W in ICPCVD where the BTMSM and $O_2$ gases are fully dissociated. Fourier transform infrared (FTIR) spectra and X-ray photoelectron spectroscopy (XPS) spectra show that the film has $Si-CH_3$ and OH-related bonds. The void within films is formed due to $Si-CH_3$ and OH-related bonds after annealing at $500^{\circ}C$ for the as-deposition samples. The lowest relative dielectric constant of annealed film at $500^{\circ}C$ is about 2.1.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 추계학술대회 논문집
• /
• pp.13-22
• /
• 1999

Both the resonance and ultrasonic techniques are standard methods far characterizing the physical properties of piezoelectric materials. However, we found that each technique can only offer a few reliable measurements while the rest often have errors or impossible to implement because of the sample requirements. This paper show that one can use the combination of both techniques to achieve much better accuracy and be able to get the complete set of elastic, dielectric and piezoelectric coefficients using fewer samples. Using an ultrasonic spectroscopy we have also measure the dispersion of the ultrasonic velocity and the attenuation up to 65 MHz. Pb(Zr,Ti)O$_3$[PZT] ceramics were used as examples fur both studies.

• Macromolecular Research
• /
• 제15권3호
• /
• pp.211-215
• /
• 2007

Hybrid thin film nanostructures composed of metal nanoparticles (NPs) and self-assembled polymer films with different spatial distributions of NPs were analyzed by optical waveguide spectroscopy (OWS). Specifically, the dielectric constants were calculated using effective medium theory for the incorporation of 1 vol% Au NP into the block copolymer (BCP) films having a cylindrical nanodomain morphology. Three cases were considered: uniform distribution of NPs in the film; selective distribution of NPs only in the cylindrical domains; and segregation of NPs to the center of the cylindrical domains. The optical waveguide spectra derived from the calculated dielectric constants demonstrate the feasibility of experimentally distinguishing the composite nanostructures with different inner morphologies in the hybrid metal NP-BCP nanostructures, by the measurement of the dielectric constants using OWS.

• 한국광학회:학술대회논문집
• /
• 한국광학회 2003년도 제14회 정기총회 및 03년 동계학술발표회
• /
• pp.198-198
• /
• 2003

Two microscopic particles irradiated by light field influence each other by the forces coursed by the dipole-dipole interaction. The interaction changes also the resonance frequencies of the particles. We show that the dipole forces between atoms, molecules or dielectric particles irradiated by laser light play an important role at distances between the particles about or less the light wavelength. We discuss the properties of the near-field forces, including their dependence on direction and polarization of the laser light. We conclude that the near-field forces can be responsible for farmation of dimers in dense atomic gases. The near-field forces can be also used for control the motion of dielectric particles on micro and nanometer scale.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
• /
• pp.114-114
• /
• 1993

• 한국재료학회지
• /
• 제21권4호
• /
• pp.236-241
• /
• 2011

Polysilazane and silazane-based precursor films were deposited on stacked TiN/Ti/TEOS/Si-substrate by spin-coating, then annealed at $150{\sim}400^{\circ}C$, integrated further to form the top electrode and pad, and finally characterized. The precursor solutions were composed of 20% perhydro-polysilazane ($SiH_2NH$)n, and 20% hydropolymethyl silazane ($SiHCH_3NH$)n in dibutyl ether. Annealing of the precursor films led to the compositional change of the two chemicals into silicon (di)oxides, which was confirmed by Fourier transform infrared spectroscopy (FTIR) spectra. It is thought that the different results that were obtained originated from the fact that the two precursors, despite having the same synthetic route and annealing conditions, had different chemical properties. Electrical measurement indicated that under 0.6MV/cm, a larger capacitance of $2.776{\times}10^{-11}$ F and a lower leakage current of 0.4 pA were obtained from the polysilazane-based dielectric films, as compared to $9.457{\times}10^{-12}$ F and 2.4 pA from the silazane-based film, thus producing a higher dielectric constant of 5.48 compared to 3.96. FTIR indicated that these superior electrical properties are directly correlated to the amount of Si-O bonds and the improved chemical bonding structures of the spin-on dielectric films, which were derived from a precursor without C. The chemical properties of the precursor films affected both the formation and the electrical properties of the spin-on dielectric film.

• 한국재료학회지
• /
• 제34권7호
• /
• pp.321-329
• /
• 2024

In this work, a series of BaTiO₃-based ceramic materials, Ba(Al_0.5Nb_0.5)_xTi_1-xO₃ (x = 0, 0.04, 0.06, 0.08), were synthesized using a standard solid-state reaction technique. X-ray diffraction profiles indicated that the Al+Nb co-doping into BaTiO₃ does not change the crystal structure significantly with a doping concentration up to 8 %. The doping ions exist in Al³⁺ and Nb⁵⁺ chemical states, as revealed by X-ray photoelectron spectroscopy. The frequency-dependent complex dielectric properties and electric modulus were studied in the temperature range of 100~380 K. A colossal dielectric permittivity (>1.5 × 10⁴) and low dielectric loss (<0.01) were demonstrated at the optimal dopant concentration x = 0.04. The observed dielectric behavior of Ba(Al_0.5Nb_0.5)_xTi_1-xO₃ ceramics can be attributed to the Universal Dielectric Response. The complex electric modulus spectra indicated the grains exhibited a significant decrease in capacitance and permittivity with increasing co-doping concentration. Our results provide insight into the roles of donor and acceptor co-doping on the properties of BaTiO₃-based ceramics, which is important for dielectric and energy storage applications.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.27-28
• /
• 2009

In this study, we have fabricated the 3 wt% $Li_2CO3$ doped $(Ba,Sr)TiO_3$ thick films on the Ag/Pd printed $Al_2O_3$ substrates for the LTCCs (Low Temperature Co-fired Ceramics) applications. From the X-ray diffraion analysis, 3 wt% $Li_2CO3$ doped BST thick films on the Ag/Pd printed $Al_2O_3$ substrates, which sintered at 900 $^{\circ}C$ have perovskite structure without any pyro phase. The dielectric properties of 3 wt% $Li_2CO3$ doped BST thick films were measured from 1 kHz to 1 MHz. To investigate the electrical properties of 3 wt% $Li_2CO3$ doped BST thick films, we employed the impedance spectroscopy. The complex impedance of 3 wt% $Li_2CO3$ doped BST thick films were measured from 20 Hz to 1 MHz at the various temperatures.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
• /
• pp.171-171
• /
• 2011

Atmospheric pressure- plasma enhanced chemical vapor deposition(AP-PECVD)Processes are recognized as promising and cost effective methods for wide-area coating on sheets of steel, glass, polymeric web, etc. In this study, $SiO_xC_y$ thin films were deposited by using AP-PECVD with a dielectric barrier discharge(DBD). The characteristic of $SiO_xC_y$ thin films were investigated as afunction of the HMDSO/O2/He flow rate. And the moisture permeability of $SiO_xC_y$ thin films was studied. The $SiO_xC_y$ thin films were characterized by the Fourier-transformed Infrared(FT-IR) spectroscopy and also investigated by X-ray photo electron spectroscopy(XPS), Auger Electron Spectroscopy(AES). The moisture permeability of $SiO_xC_y$ thin films was investigated by $H_2O$ permeability tester Detailed experimental results will be demonstrated through th present work.

• 한국전기전자재료학회논문지
• /
• 제15권5호
• /
• pp.393-397
• /
• 2002

Polyimide (PI) films have been studied widely as the interlayer dielectric materials due to a low dielectric constant, low water absorption, high gap-fill and planarization capability. The polyimide film was etched using inductively coupled plasma system. The etcying characteristics such as etch rate and selectivity were evaluated at different $CF_4/(CF_4+O_2)$chemistry. The maximum etch rate was 8300 ${\AA}/min$ and the selectivity of polyimide to SiO$_2$was 5.9 at $CF_4/(CF_4+O_2)$ of 0.2. Etch profile of polyimide film with an aluminum pattern was measured by a scanning electron microscopy. The vertical profile was approximately $90^{\circ}$ at $CF_4/(CF_4+O_2)$ of 0.2. As 20% $CF_4$ were added into $O_2$ plasma from the results of the optical emission spectroscopy, the radical densities of fluorine and oxygen increased with increasing $CF_4$ concentration in $CF_4/O_2$ from 0 to 20%, resulting in the increased etch rate. The surface reaction of etched PI films was investigated using x-ray photoelectron spectroscopy.