• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.822-825
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• 2003

Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. A method for determining the dielectric relaxation time $\tau$ of floating monolayers on water surface is presented. WC flowing across monolayers is analyzed using a rod-like molecular model. It is revealed that the dielectric relaxation time $\tau$ of monolayers in the isotropic polar orientational phase is determined using a liner relationship between the monolayer compression speed ${\alpha}$ and the molecular area Am. Compression speed ${\alpha}$ was about 30, 40, 50mm/min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.173-176
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• 1998

We experimentally investigated the dielectric relaxation phenomena of a liquid crystal monolayers by the Displacement current techique and displacement current flowing across monolayers is analyzed using rod-like molecular model. It is revealed that the dielectric reaxation time $\tau$ of monolaters in the isotropic polar orientational phase is determined using a linear relashionship between the monolayers compression speed $\alpha$ and the molecular area. The dielectric relaxation time of phospholipid monolayers was examined on the basis of the analysis developed here.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.111-115
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• 2004

In this paper, evaluation of physical properties about dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of phospolipid monomolecular DLPC, DMPC using pressure stimulus. As a result, the changed surface pressure, displacement current and the transition forms of dipole moment of phospolipid monomolecular in area per molecular by pressure stimulus were conformed well. It was known that the monolayers by linear relationship for decision of dielectric relaxation time between compressure speed $\alpha$ and molecule area $A_m$ By according to the linear relationship relation get that frictional constant $\xi$, DLPC was $1.89{\times}10^{-19}$[Js] and DMPC was $0.722{\times}10^{-19}$[Js]. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area.

• Bulletin of the Korean Chemical Society
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• v.22 no.11
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• pp.1231-1235
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• 2001

Pseudotetragonal ZrO0.75S whose space group is P212121 was synthesized and the cell dimensions were a=5.110(2) $\AA$, b=5.110(7) $\AA$, and c=5.198(8) $\AA.$ The space group P212121 seems to be resulted from lowering the symmetry of cubic ZrOS structure with P213 space group by lattice distortion due to the oxygen defects. In the distorted structure, bond shortening between metal-nonmetal by reduction of cell volume and alternation of Zr-Zr distance were observed. Dielectric constant and loss data of the bulk material in temperature range -170 to 20 $^{\circ}C$ and frequency range 50 Hz to 1 MHz showed that there was dielectric transition at around -70 $^{\circ}C$ originated from the relaxation of Zr-S segment. Comparing with ZrO2 exhibited the dielectirc constants, 9.0 at room temperature, ZrO0.75S showed high dielectric constant, k = 200.2 at 100 kHz. The activation energy of relaxation time due to dielectric relaxation of Zr-S was 0.47 eV (11.3 kcal/mole). According to the impedance spectra, ZrO0.75S showed more parallel circuit character between the resistance and capacitance components at the temperature (-70 $^{\circ}C)$ that the Zr-S dielectric relaxation was observed.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.4
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• pp.15-24
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• 2000

The dielectric relaxation of high-dielectric capacitors could be understood as a dynamic property of the capacitor in the time domain, which is regarded as a primarily important charge loss mechanism during the refresh time of DRAMs. Therefore, the equivalent circuit of the dielectric relaxation of the high-dielectric capacitor is essentially required to investigate its effects on DRAM. Nevertheless, There is not any theoretical method which is generally applied to realize the equivalent circuit of the dielectric relaxation. Recently, we have developed a novel procedure for the circuit modeling of the dielectric relaxation of high-dielectric capacitor utilizing the frequency domain. This procedure is a general method based on theoretical approach. We have also verified the feasibility of this procedure through experimental process. Finally, we successfully investigated the effect of dielectric relaxation on DRAM operation with the obtained equivalent circuit through this new method.

• Journal of the Korean Chemical Society
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• v.56 no.1
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• pp.20-27
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• 2012

Complex permittivity spectra of Allyl Chloride (AC), 2-Butanone (2-BU) and their binary mixtures over the entire range of concentration were obtained using the Time Domain Reflectometry (TDR) technique in microwave frequency range at various temperatures. Static dielectric constant and relaxation time are obtained from complex permittivity spectra. Density ($\rho$) and refractive index ($n_D$) are also measured. These parameters are used to determine excess dielectric constant, excess inverse relaxation time, excess molar volume, excess molar refraction, polarity, Bruggeman factor and thermodynamic parameters viz. enthalpy of activation and entropy of activation. The values of static dielectric constant and relaxation time increases while density and refractive index decreases with the percentage of 2-Butanone in Allyl Chloride increases. Excess parameters were fitted to a Redlich-Kister equation.

• Bulletin of the Korean Chemical Society
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• v.23 no.3
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• pp.413-416
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• 2002

The dielectric responses of 10 and 40 wt% siloxane-epoxy copolymers were investigated in temperature range near the glass transition of polydimethylsiloxane at which the dielectric transitions were also observed. On the other hand, the pure epoxy did not show any dielectric transition in measurement temperature range -90 to 150 $^{\circ}C.$ The experimental data showed that for the copolymer investigated, the temperature-frequency super-position principle could be applied to the dielectric response. From the Cole-Cole equation, the dielectric relaxation of the 10 wt% siloxane near the glass transition temperature resulted in a broad distribution with ${\beta}=$ 0.19 and the relaxation time at -70 $^{\circ}C$ was 5.3 ${\times}$ $10^{-2}$s. The glass transition temperature, 188 K, was estimated by using WLF relation, which was consistent with the data presented in experiment.

• Bulletin of the Korean Chemical Society
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• v.27 no.12
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• pp.2040-2044
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• 2006

Dielectric studies of methyl acrylate with 1-propanol, 1-butanol, 1-heptanol and 1-octanol binary mixtures have been carried out over the frequency range from 10 MHz to 10 GHz at temperatures of 283, 293, 303 and 313 K using Time Domain Reflectometry (TDR) for various concentrations. The Kirkwood correlation factor and excess inverse relaxation time were determined and discussed to yield information on the molecular structure and dynamics of the mixture. The values of the static dielectric constant, relaxation time and the Kirkwood correlation factor decrease with increased concentration of methyl acrylate in alcohol. The Bruggman plot shows a non-linearity of the curves for all the systems studied indicates the heterointeraction which may be due to hydrogen bonding of the OH group of alcohol with C=O of the methyl acrylate. The excess inverse relaxation time values are negative for all the systems at all the temperatures indicates that the solute-solvent interaction hinders the rotation of the dipoles of the system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.168-169
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• 2006

The physical properties of DMPC monolayer were made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current. The phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.543-548
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• 2014

In this paper, the dielectric relaxation and reliability of high capacitance density metal-insulator-metal (MIM) capacitors using $Al_2O_3-HfO_2-Al_2O_3$ and $SiO_2-HfO_2-SiO_2$ sandwiched structure under constant voltage stress (CVS) are characterized. These results indicate that although the multilayer MIM capacitor provides high capacitance density and low dissipation factor at room temperature, it induces greater dielectric relaxation level (in ppm). It is also shown that dielectric relaxation increases and leakage current decreases as functions of stress time under CVS, because of the charge trapping effect in the high-k dielectric.