• Title/Summary/Keyword: Dielectric materials

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A Study on the Dielectric Strength of Composite Materials(I) (복합재료의 전기적 절연특성과 개발에 관한 연구(I))

  • 정은식;강창남;박정후
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.34 no.8
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    • pp.323-330
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    • 1985
  • Dielectric loss tangent and ac dielectric strength of GFRP (Glass Fiber Reinforced Plastics, G-10)was investigated as parameters of mechanical and thermal stresses, in order to study the basic dielectrical characteristics of composite insulating materials. The dielectric loss tangent was increased and the ac dielectric strength was decreased with increase in the mechanical stresses beyond the mechanical yield point on account of fiber-matrix debonding, but the dielectric constant was not varied sigificantly. the dielectric strength of G-10 was about 2 MV/cm and the dielectric constant was about 4.8.

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Preparation and Characterization of BCB Resin-BNT Composite Substrate Materials (BCB Resin-BNT 복합 기판 소재의 제조 및 특성 평가)

  • Kim, Un-Yong;Chun, Myoung-Pyo;Cho, Jung-Ho;Kim, Byung-Ik;Lee, Yong-Hyun;Myoung, Sung-Jae;Han, Ik-Hyun;Shin, Dong-Uk
    • Journal of the Korean Ceramic Society
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    • v.44 no.5 s.300
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    • pp.179-183
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    • 2007
  • BCB $Resin-BaNd_2Ti_4O_{12}$(BNT) composites with BNT contents were prepared by tape casting method and epoxy resin-BNT composites were prepared by using heating press. Their dielectric properties and microstructures were investigated. The dielectric properties such as dielectric constant and dielectric loss at 1 MHz for epoxy resin-BNT composites and BCB resin-BNT composites are improved with an increase of BNT volume fraction. The dielectric constant of the Epoxy-BNT composite increased from 5.9 to 7.8 as the volume fraction of BNT increased from 15 to 25. The dielectric constant of the BCB-BNT composite increased from 9.1 to 15.5 as the volume fraction of BNT increased from 30 to 50. The dielectric behavior of BCB-BNT system can be explained by Lichtenecker's equation. The dielectric constant of epoxy resin-BNT composite is smaller than that of BCB resin-BNT composite. These results are considered to be related with the dispersion of BNT filler in polymer matrix from the result of SEM photograph.

Development of the Dielectric sensor for the Cure monitoring of the high temperature Composites (고온 복합재료의 경화 모니터링을 위한 유전센서의 개발)

  • 김일영;최진경;최진호;이대길
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2000.11a
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    • pp.22-28
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    • 2000
  • The fiber reinforced composite materials is widely used in aircraft, space structures and robot arms because of high specific strength and high specific modulus. The on-line cure monitoring during the cure process of the composite materials has become an important research area for the better quality and productivity. In this paper, the dielectric circuit of the wheatstone bridge type for measuring the dissipation factor was designed and manufactured. Also, the dielectric sensor for the cure monitoring of the high temperature composites was developed. The residual thermal stresses of the dielectric sensor were analyzed by the finite element method and its dielectric characteristics under high temperature were evaluated. The on-line cure monitoring of the BMI resin was performed using the wheatstone bridge type circuit and developed high-temperature dielectric sensor.

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Dielectric Properties of Carbon Black-Filled Polyethylene Matrix Composites (카본블랙 충진 Polyethylene Matrix Composites의 유전 특성)

  • Shin, Soon-Gi
    • Korean Journal of Materials Research
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    • v.21 no.4
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    • pp.196-201
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    • 2011
  • It is known that the relative dielectric constant of insulating polyethylene matrix composites with conducting materials (such as carbon black and metal powder) increases as the conducting material content increases below the percolation threshold. Below the percolation threshold, dielectric properties show an ohmic behavior and their value is almost the same as that of the matrix. The change is very small, but its origin is not clear. In this paper, the dielectric properties of carbon black-filled polyethylene matrix composites are studied based on the effect medium approximation theory. Although there is a significant amount of literature on the calculation based on the theory of changing the parameters, an overall discussion taking into account the theory is required in order to explain the dielectric properties of the composites. Changes of dielectric properties and the temperature dependence of dielectric properties of the composites made of carbon particle and polyethylene below the percolation threshold for the volume fraction of carbon black have been discussed based on the theory. Above the percolation threshold, the composites are satisfied with the universal law of conductivity, whereas below the percolation threshold, they give the critical exponent of s = 1 for dielectric constant. The rate at which the percentages of both the dielectric constant and the dielectric loss factor for temperature increases with more volume fraction below the percolation threshold.

The Study on the Fabrication and Characterization of Dielectric Materials of Front and Back Panel for PDP(Plasma Display Panel)

  • Chang, Myeong-Soo;Lee, Yoon-Kwan;Ryu, Byung-Gil;Park, Myung-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.181-182
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    • 2000
  • The glass compositions of $PbO-SiO_2-B_2O_3$ system and $P_2O_5-PbO-ZnO$ system for the transparent dielectric materials for front panel and $P_2O_5-ZnO-BaO$ and $SiO_2-ZnO-B_2O_3$ for the reflective dielectric materials for back panel of PDP(Plasma Display Panel) were investigated. As a transparent dielectric materials for front panel, $PbO-SiO_2-B_2O_3$ glass showed good dielectric properties, high transparency and proper thermal expansion matching to soda-lime glass substrate. And the reflective dielectric materials for back panel were prepared from parent glass of $SiO_2-ZnO-B_2O_3$ system and oxide filler. It was found that these glass-ceramics are useful materials for reflective dielectric layers, as those have a similar thermal expansion to soda-lime glass plate, high reflectance, low sintering temperature.

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Effect of Degree of Particle Agglomeration on the Dielectric Properties of BaTiO3/Epoxy Composites (분말 응집도가 BaTiO3/에폭시 복합체의 유전특성에 미치는 영향)

  • Han, Jeong-Woo;Kim, Byung-Kook;Je, Hae-June
    • Korean Journal of Materials Research
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    • v.18 no.10
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    • pp.542-546
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    • 2008
  • $BaTiO_3$/epoxy composites can be applied as the dielectric materials for embedded capacitors. The effects of the degree of $BaTiO_3$ particle agglomeration on the dielectric properties of $BaTiO_3$/epoxy composites were investigated in the present study. The degree of particle agglomeration was controlled by the milling of the agglomerated particles. The size and content of the agglomerated $BaTiO_3$ particles decreased with an increase in the milling time. The dielectric constants and polarizations of $BaTiO_3$/epoxy composites abruptly decreased with the increase of the milling time. It was concluded that the dielectric constants and polarizations of $BaTiO_3$/epoxy composites decreased as the degree of particle agglomeration decreased. The degree of agglomeration of $BaTiO_3$ particles turned out to be a very influential factor on the dielectric properties of $BaTiO_3$/epoxy composites.

Transparent Sol-Gel Hybrid Dielectric Material Coatings for Low k Passivation Layer

  • Yang, Seung-Cheol;Oh, Ji-Hoon;Kwak, Seung-Yeon;Bae, Byeong-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1453-1456
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    • 2009
  • Transparent sol-gel hybrid dielectric material (hybrimer) coating films were fabricated by spin coating and photo or thermal curing of sol-gel derived oligosiloxane resins. Hybrimer coating films are suitable as the passivation layer of TFT in AMLCD due to low dielectric constant, small loss tangent, low leakage current density, high transmittance and thermal stability.

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Recent Progress in Dielectric Materials for MLCC Application (MLCC용 유전체 소재의 연구개발 동향)

  • Seo, Intae;Kang, Hyung-Won;Han, Seung Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.35 no.2
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    • pp.103-118
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    • 2022
  • With the recent increase in demand for electronic devices, multi-layer ceramic capacitors (MLCCs) have become the most important core component. In particular, the next-generation MLCC with extremely high reliability is required for the 4th industrial revolution and electric vehicle applications. Therefore, it is necessary to develop dielectric ceramic materials with high dielectric properties and reliability. During the decades, electrical properties of BaTiO3 based dielectric ceramics, which have been widely used in MLCC industrial field, have been improved by microstructure and defect chemistry control. However, electrical properties of BaTiO3 have reached their limits, and new types of dielectric materials have been widely studied. Based on these backgrounds, this report presents the recent development trends of BaTiO3-based dielectric materials for the next-generation MLCCs, and suggests promising candidates to replace BaTiO3 ceramics.

유전체 재료를 활용한 이동통신 필터 기술

  • 김준철;방규석;이형규
    • The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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    • v.12 no.3
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    • pp.25-34
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    • 2001
  • There are many kinds of dielectric materials in microwave dielectric filters for mobile telecomunication. But It is need to new dielectric materials for IMT200O, Bluetooth, wireless LAN to miniaturize the dielectric filters. These kinds of materials should have high dielectric constants, high Q, and low firing sintering temperature(<900˚C ). Multilayer monolithic dielectric filters are manufactured by BiNb04, dielectric ceramics cofired at 875˚C .

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Characterization of Thin Film Transistor using $Ta_2O_5$ Gate Dielectric

  • Um, Myung-Yoon;Lee, Seok-Kiu;Kim, Hyeong-Joon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.157-158
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    • 2000
  • In this study, to get the larger drain current of the device under the same operation condition as the conventional gate dielectric SiNx thin film transistor devices, we introduced new gate dielectric $Ta_2O_5$ thin film which has high dielectric constant $({\sim}25)$ and good electrical reliabilities. For the application for the TFT device, we fabricated the $Ta_2O_5$ gate dielectric TFT on the low-temperature-transformed polycrystalline silicon thin film using the self-aligned implantation processing technology for source/drain and gate doping. The $Ta_2O_5$ gate dielectric TFT showed better electrical performance than SiNx gate dielectric TFT because of the higher dielectric constant.

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