• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.490-491
• /
• 2007

We have investigated dielectric polarization in organic light-emitting diodes using 8-hydroxyquinoline aluminum$(Alq_3)$ as an electron transport and emissive material. We analyzed the dielectric polarization of organic light emitting diodes using impedance. Impedance characteristics was measured complex impedance Z and phase ${\theta}$ in the frequency range of 40Hz to $10^8Hz$. We obtained dielectric constant and loss tangent (tan ${\delta}$) of the device. From these analyses, we are able to interpret a dielectric dispersion and dielectric absorption contributed by an interfacial and orientational polarization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.12 no.1
• /
• pp.35-43
• /
• 1999

Microstructures and dielectric properties of (Sr$\_$1-x/Ca$\_$x/) TiO$_3$-0.006Nb$_2$O$\_$5/ (0.05$\leq$x$\leq$0.2) boundary layer ceramics were investigated. The samples fired in a reducing atmosphere(N$_2$) were painted on the surface with CuO paste for the subsequent grain boundary diffusion, and then annealed at 1100$^{\circ}C$ for 2 hrs. The metal oxide of CuO infiltrated by thermal diffusion from surface of sample presents continuously in not grain but only grain boundary, and makes up thin boundary phase. The SEM photo, and EDAX revealed that CuO was penetrated rapidly into the bulk along the grain boundaries during the annealing. The average grain sizes is continuously increased as the content of substitutional Ca is increased from 5[mol%] to 15[mol%], but the average grain size of the sample with content of 20[mol%] Ca is slightly decreased. In the samples with content of 10∼15[mol%] Ca, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss <0.3[%], and capacitance change rate as a function of temperature <${\pm}$10[%], respectively. All samples in this study exhibited dielectric relaxation with frequency as a functior of the temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.326-326
• /
• 2010

The dielectric properties of continuous composition spreaded (CCS) $BaTiO_3-SrTiO_3$ (BST) thin filmsgrown at room temperature and annealed at different temperature ($350^{\circ}C$ and $550^{\circ}C$) were investigated. Moreover, electrical properties (leakage current and breakdown voltage) of CCS BST thin films were also investigated. The aluminum top-electrode, sized by $200{\times}200\;{\mu}m2$ and apart from each other by $300\;{\mu}m$, were deposited on the CCS BST thin films by the DC sputtering system. The dielectric properties of the CCS BST thin films were significantly influenced depending on the distance from $BaTiO_3$ and $SrTiO_3$ targets which was attributed to the $BaTiO_3-SrTiO_3$ composition ratio. The maps of dielectric constants and loss tangents were plotted via $1500\;{\mu}m$ - step measuring. The specific points showing the dielectric constant (k: ~300) and loss tangent (tand: ~0.008) at 1 MHz were found.

• Korean Journal of Materials Research
• /
• v.13 no.4
• /
• pp.259-265
• /
• 2003

For the aim of thin microwave absorbers used in mobile telecommunication frequency band, this study proposed a high permittivity dielectrics(λ/4 spacer) coated with ITO thin films of 377 $\Omega$/sq(impedance transformer). High frequency dielectric properties of ferroelectric ceramics, electrical properties of ITO thin films and microwave absorbing properties of ITO/dielectrics were investigated. Ferroelectric materials including $BaTiO_3$(BT), 0.9Pb($Mg_{1}$3/Nb$_{2}$3/)$O_3$-0.1 $PbTiO_3$(PMN-PT), 0.8 Pb (Mg$_{1}$3/$Nb_{2}$3/)$O_3$-0.2 Pb($Zn_{1}$3$_Nb{2}$3/)$O_3$(PMN-PZN) were prepared by ceramic processing for high permittivity dielectrics,. The ferroelectric materials show high dielectric constant and dielectric loss in the microwave frequency range. The microwave absorbance (at 2 ㎓) of BT, 0.9PMN-0.1PT, and 0.8PMN-0.2PZN were found to be 60%(at a thickness of 3.5 mm), 20% (2.5 mm), and 30% (2.5 mm), respectively. By coating the ITO thin films on the ferroelectric substrates with λ/4 thickness, the microwave absorbance is greatly improved. Particularly, when the surface resistance of ITO films is closed of 377 $\Omega$/sq, the reflection loss is reduced to -20 ㏈(99% absorbance). This is attributed to the wave impedance matching controlled by ITO thin films at a given thickness of high permittivity dielectrics of λ/4 (3.5 mm for BT, 2.5 mm for PMN-PT and PMN-PZN at 2 ㎓). It is, therefore, successfully proposed that the ITO/ferroelectric materials with controlled surface resistance and high dielectric constant can be useful as a thin microwave absorbers in mobile telecommunication frequency band.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.51 no.7
• /
• pp.49-59
• /
• 2014

Effects of the dielectric constant and thickness of a feed substrate on the bandwidth and radiation characteristics of an aperture coupled microstrip patch antenna (ACMPA) are investigated. The optimized return loss bandwidth of an ACMPA increases without the degradation of radiation characteristics as the feed substrate dielectric constant increases for the same feed substrate thickness. The optimized return loss bandwidth of an ACMPA with the dielectric constant of a feed substrate of 10, which is compatible with the high dielectric constant monolithic microwave integrated circuit (MMIC) materials, increases without the degradation of radiation characteristics as the thickness of a feed substrate decreases. The ACMPA configuration is suitable for integration with MMICs.

• Journal of the Korean Vacuum Society
• /
• v.20 no.3
• /
• pp.182-188
• /
• 2011

Polysilazane and polymethylsilazane based precursor films were deposited on Si-substrate by spin-coating, subsequently annealed at $150{\sim}850^{\circ}C$, and characterized. Structural analysis, shrink, compositional change, etch rate, and gap-filling were observed. Annealing the precursor films led to formation of spin-on dielectric films. C-containing precursor films showed that less loss of N, H, and C while less gain of O than that of C-free precursor films at $400^{\circ}C$, but more loss of N, H, and C while more gain of O at $850^{\circ}C$. Thus polysilazane based precursor films exhibited less reduction in thickness of 14.5% than silazane based one of 15.6% at $400^{\circ}C$ but more 37.4% than 19.4% at $850^{\circ}C$. FTIR indicated that C induced smaller amount of Si-O bond, non-uniform property, and lower resistance to chemical etching.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.9 no.1
• /
• pp.17-24
• /
• 2014

In this paper, we analysed coupling coefficient between dielectric resonator of high dielectric constant and microstrip line to design for low phase noise dielectric resonator by direct coupling. Also we analysed phase noise of dielectric resonance oscillator with parallel feedback circuit to complement Q by high dielectric constant. We obtained a result from high-stability dielectric oscillator which is optimum designed through analysis of dielectric resonance oscillator phase noise and coupling coefficient. The result is that the phase noise was -83.3dBc/Hz@1KHz at 20.25GHz when we used about 3.6 coupling coefficient and ${\epsilon}_r$=30 dielectric resonator of 20.25GHz dielectric resonance oscillator. As a result, we suggested the direct-connect design method by frequency multiplication mode to prevent phase noise loss at K-Band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05b
• /
• pp.78-81
• /
• 2002

Ferroelectric thin film is a very attractive material for the tunable microwave device applications such as electronically tunable mixers, delay lines, filters and phase shifters. Thin films of $Pb_{x}Sr_{1-x}TiO3(PST)$ were fabricated onto Pt/Ti/SiO2/Si substrate by the sol-gel method. We have investigated the structural and dielectric properties of PST(50/50) thin films for tunable microwave device applications. The PST thin films show typical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films are strongly dependent on annealing temperature. The dielectric constants, loss and tunability of the PST (50/50) thin films were 404, 0.023 and 51.73 %, respectively.

• Journal of the Korean Ceramic Society
• /
• v.24 no.3
• /
• pp.270-276
• /
• 1987

The microstructure and dielectric properties of a SrTiO3-based GBL (Grain Boundary Layer) capacitor were investigated. The 0.6 mol% Nb2O5 doped SrTiO3 was sintered for 3 hr at 1450$^{\circ}C$ in mixed gas(N2/H2) atmosphere. The Nb2O5 promoted the grain growth of the SrTiO3 ceramics was decreased with the amount of Nb2O5. The oxide mixture(PbO, Bi2O3, B2O3) were painted on the reduced specimen and fired at 1000$^{\circ}C$ to 1100$^{\circ}C$ in air. The penetrated oxide mixture into specimen were located in grain boundaries. A SrTiO3-based GBL capacitor had the apparent permittivity of about 3.0${\times}$104, the dielectric loss of 0.01-0.02, and insulating resistance of 108-109$\Omega$.cm. The capacitor had the stable temperature coefficient of capacitance and exhibited dielectric dispersion over 107 Hz. The capacitance-voltage measurements indicated that the grain boundary was composed of the continuous insulating layers.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.47 no.11
• /
• pp.43-48
• /
• 2010

The main features of a dielectric-loaded surface plasmon polariton waveguide are analyzed such as mode effective index and propagation length. These parameters are calculated using the finite element method for different metal-polymer pairs while varying the ridge width and thickness. As a performance metric, we employ the 2D figure of merit including two conflicting parameters i.e. mode effective index and propagation length. The results obtained here allow one to identify the parameter range for realizing the dielectric-loaded surface plasmon polariton waveguide and to choose dimension and material of the ridge for subwavelength confinement and moderate propagation loss at telecom wavelengths.