• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.5
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• pp.128-132
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• 2017

In this thesis, a BPF(band-pass filter) at the center frequency of 2.14GHz, and bandwidth of 20MHz is designed and implemented using high Q dielectric resonators with ${\varepsilon}_r=38$. The DR(dielectric resonator) is resonated by $TE_{01{\delta}}$-mode and it has a hole in the center of DR. The BPF consists of 6-poles dielectric resonators and the characteristic of elliptic function is obtained by non-adjacent coupling. It has the average insertion loss of 0.97dB and the return loss over 25dB in its passband. In this thesis, the frequency selectivity is more improved by the coupling characteristics between non-adjacent resonators than that of dielectric resonator filters with a Chebyshev response.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.471-481
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• 1995

Measurement factors for the dielectric properties of low dielectric loss materials (tan${\dalta}{\le}10^{-4}$) were investigated using the dielectric rod resonator method. It was shown that the relative conductivity (${\sigma}_{r}$) should be controlled within a 5% to obtain the standard deviations of less than 0.07 for permittivity .epsilon.r and 0.06${\times}10^{-4}$ for tan.delta.respectively. Surface resistivity (R$_s$) could be reduced when the surface roughness of parallelled conducting plate was less than 0.07 .mu.m. Measurement error for the permittivity was $\pm$0.02% independent of probe loop size, whereas the error in Q value was reduced with the decrease in probe loop size and also with the increase in the absolute values of Q. Reliable Q values were determined with the probe loop size of less than 4mm. The accurate for the distance between the measuring probe loop and the sample could be obtained when the insertion loss of resonant frequency ranged -15dB - -30dB.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1250-1251
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• 2008

In this study, the dielectric ceramics with low loss were investigated for high frequency application. All sample of the $Ba_5M_4O_{15}$ (M=Ta, Nb) ceramics were prepared by the conventional mixed oxide method and sintered at $1325{\sim}1575^{\circ}C$. The bulk density and dielectric constant of the $Ba_5Ta_4O_{15}$ ceramics were increased continuously with increasing of sintering temperature. The quality factor was increased in the sintering temperature of $1375{\sim}1475^{\circ}C$ but decreased at the temperature above 1475$^{\circ}C$. In the case of $Ba_5Nb_4O_{15}$ ceramics, the bulk density, dielectric constant and quality factor were increased with sintering temperature but decreased above temperature of 1400$^{\circ}C$. The dielectric constant, quality factor and temperature coefficient of the resonant frequency (TCRF) of the $Ba_5Ta_4O_{15}$ and $Ba_5Nb_4O_{15}$ ceramics, sintered at 1475$^{\circ}C$ and 1400$^{\circ}C$, were 25.15, 53105 GHz, -3.06 ppm/$^{\circ}C$ and 39.55, 28052 GHz, 5.7 ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.31-34
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• 2003

($Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$ (BSCT) (x=0.10, 0.15, 0.20) powder, prepared by the sol-gel method, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on alumina substrates using the BSCT paste. The structural and the electrical properties were investigated for various composition ratio and sintering temperature. BSCT thick film thickness, obtained by four printings, was approximately 110 ~ 120 ${\mu}m$. The Curie temperature and dielectric constant at room temperature were decreased with increasing Ca content. The relative dielectric constant, dielectric loss and tunability of the BSCT(50/40/10) specimen, which was sintered at $1420^{\circ}C$ and measured at 1MHz, were about 910, 0.46% and 9.28% at 5kV/cm, respectively.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1417-1419
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• 1997

In this paper, the dielectric properties is made researches by the dose of electron beam in order to investigate the electrical properties for transformer oils due to electron beam irradiation. To measure the dielectric loss of irradiated specimen, the liquid electrode of coaxial cylindrical shape is used, and its geometric capacitance is 16 [pF]. And the dielectric dissipation factor, $tan{\delta}$, is measured by using the Video Bridge 2150. The thermal static oven with an automatic temperature controller is used so as to apply specific temperature to specimen. This experiments for measuring the dielectric loss is performed at $20{\sim}120[^{\circ}C]$ in temperature range, $30{\sim}1.5{\times}10^5[Hz]$ in frequency and $300{\sim}500[mV]$ in voltage.

• Journal of the Korean Ceramic Society
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• v.32 no.9
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• pp.1056-1064
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• 1995

95Pb(Mg1/3Nb2/3)O3-5PbTiO3 (hereinafter designated as 95PMN-5PT) system was prepared by the columbite-precursor method with 2 mol% excess PbO to compensate the PbO loss during thermal process. The amount of CuO was 1~10 mol%, and the effects of CuO addition on the dielectric properties of this system have been investigated. From the microstructures, XRD analysis and dielectric measurements, the solubility limit of CuO in 95PMN-5PT was found to be around 3 mol%. Lattice parameter and Curie temperature were found to be decreased as the amount of CuO increased up to the solubility limit. This result confirmed that the Cu2+-ions substituted the Pb2+-ions. It was revealed that the addition of CuO on 95PMN-5PT promoted the sinterability and properties. The room temperature dielectric constant, the loss factor and the specific resistivity of the specimens processed with optimum conditions were 23000, 1%, and 8$\times$1011Ω.cm, respectively.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.985-986
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• 2006

The epitaxial $KTa_{0.524}Nb_{0.446}Ti_{0.03}O_3$ films with 3% Ti were investigated. Titanium (+4) substitution on the Nb/Ta site should reduce dielectric losses of KTN: Ti film by introducing an acceptor state. This acceptor state traps electrons due to oxygen vacancies that form during oxide film growth. KTN:Ti films were grown using pulsed laser deposition, and then annealed at different temperatures in oxygen ambient. The crystallinity, and surface morphology of KTN:Ti film were investigated using x-ray diffraction, and atomic force microscopy. The dielectric properties of Ti doped KTN films measured for unannealed and annealed films will be reported. Tunability and dielectric loss of as-deposited KTN:Ti film were determined to be 10% and 0.0134, respectively. For films annealed at $800^{\circ}C$ and $900^{\circ}C$, the dielectric loss decreased but with a decrease in tunability as well.

• Elastomers and Composites
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• v.18 no.2
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• pp.51-59
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• 1983

The dielectric properties of polymers are very important when investigating the molecular structure of polymers. The characteristics of the dielectric absorption in vulcanized natural rubber were studied in frequency ranging from 10[KHz] to 32[MHz] at the temperature of 25[$^{\circ}C$]. As a result of the study, it has been confirmed that natural rubber vulcanized below 4phr leads to two kinds of dielectric losses due to the interfacial polarization and the dipole polarization by sulfur, and of above 7[%] was only a loss due to the dipole polarization by sulfur. Futhermore, the dielectric loss maximum $tan{\delta}$ spectrum, removed to the low frequency in accordance with increasing sulfur, depends greatly on sulfur. The volume resistivity of $10^{7}{\sim}10^{11}[{\Omega}{\cdot}cm}]$, regardless of whether the crosslinking of rubber is weakened by sulfur, was observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.357-360
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• 2000

Ferroelectric 0.05PZN-xPZT(90/10)-(0.95-x)PZT(10/90) (x=0.65, 0.85) specimens were fabricated by the mixed-oxide method and cold-pressing method using sol-gel derived PZT(90/10) and PZT(10/90) powders. All specimens show a uniform ferroelectric grain without the presence of the pyrocholre phase. Average grain size increased with an increase in sintering temperature, the value for the x=0.65 specimen sintered at 125$0^{\circ}C$ was 14.4${\mu}{\textrm}{m}$. The dielectric constant and dielectric loss of the x=0.65 specimen sintered at 125$0^{\circ}C$ were 1247, 2.05%, respectively. All specimens showed fairly good temperature and frequency stability of dielectric constant with the range from -2$0^{\circ}C$ to 6$0^{\circ}C$ and 100Hz to 10MHz. The coercive electric field and the remanent polarization of x = 0.65 specimen sintered at 125$0^{\circ}C$ were 8.5 kV/cm and 13 $\mu$C/cm$^2$, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.69-77
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• 1996

We analyzed wideband propagation characteristics of a microstrip transmission line based on FR-4 composite substrate using the wideband complex dielectric constant model and the phenomenological loss equivalence method. The loss calculated by constant relative permittivity and loss tangent is greatly overestimatd compared to that calculated by the frequency-dependent complex relative permittivity. This wideband analysis can be helpful to characterize high-speed and high-density transmission lines associated with the wideband dielectric characteristics and shows that the FR-4 composite substrate has high potential of high frequency circuit applications in terms o fthe propagation loss.