• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.10 s.113
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• pp.967-975
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• 2006

In this paper, design and implementation of a very compact and cost effective front-end module are presented for IEEE 802.16 FWA(fixed Wireless Access) in the 40 GHz band. A multi-layer LTCC(Low Temperature Co-fred Ceramic) technology with cavity process to achieve excellent electrical performances is used to fabricate the front-end module. The wirebond matching circuit design of switch input/output port and waveguide transition to connect antenna are optimally designed to keep transmission loss low. To reduce the size of the front-end module, the dielectric waveguide filter is developed instead of the metal waveguide filter. The LTCC is composed of 6 layers(with the thickness of a layer of 100 um) having a relative dielectric constant of 7.1. The front-end module is implemented in a volume of $30{\times}7{\times}0.8mm^3$ and shows an overall insertion loss < 5.3 dB, and image rejection value > 49 dB.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.224-230
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• 2001

The characteristics of $NO/N_2O$ annealed reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of Non-Volatile Semiconductor Memory (NVSM) were investigated by Dynamic Secondary Ion Mass Spectrometry (D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), and Auger Electron Spectroscopy (AES). The specimen was annealed by $NO/N_2O$ after initial oxide process and then rcoxidized for nitrogen redistribution in nitrided oxide. Out-diffusion of incorporated nitrogen during the wet oxidation in reoxidation process took place more strongly than that of the dry oxidation. It seems to indicate that hydrogen plays a role in breaking the Si N bonds. As reoxidation proceeds, incorporated nitrogen of $NO/N_2O$ annealed nitrided oxide is obsen-ed to diffuse toward the surface and substrate at the same time. ToF-SIMS results show that SiON species are detected at the initialoxide interface, and Si,NO species near the new $Si_2NO$ interface that formed after reoxidation. These SiON and $Si_2NO$ species most likely to relate to the origin of the state of memory charge traps in reoxidized nitrided oxide, because nitrogen dangling bonds of SiON and silicon dangling bonds of $Si_2NO$ are contained defects associated with memory effect.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.6
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• pp.37-43
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• 2017

This review investigates the basic principle of physical interactions and failure mechanisms introduced in the materials and inner parts of semiconducting components under electromagnetic pulses (EMPs). The transfer process of EMPs at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers). The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMPs. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMPs transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.

• Journal of Sensor Science and Technology
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• v.5 no.4
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• pp.1-7
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• 1996

Optical intensity-type pressure sensor was fabricated by coupling optical fiber with a micromachined thin dielectric diaphragm, which consists of a 300 nm thick $SiO_{2}$ layer sandwiched between 150 nm thick top and bottom $Si_{3}N_{4}$ layers. At the wavelength of the sensor light source near $1.3\;{\mu}m$, the optical transmittance of the diaphragm was about 50 %, but it was decreased to a few percents by depositing $1,000\;{\AA}$ thick gold(Au) layer on the diaphragm, which is sufficient enough to be used as a light reflection layer of the sensor. From the optical output power-pressure characteristics of the sensors, it was found that the output power linearly decreased with increasing applied pressure from 0 to 77 torr regardless of the diaphragm size. The respective sensitivities were 0.52, 0.65, and 0.77 nW/torr for the diaphragm sizes of $3{\times}3$, $4{\times}4$, and $5{\times}5\;mm^{2}$, indicating that the sensitivity increases as diaphragm size decreases.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.21 no.1
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• pp.75-81
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• 1985

The tensile and dielctric strength of the epoxied resin with bi-directional woven glass fibers with a laminate of two layers(G-10) are studied, and the test parameter is the angle between fiber orientation and the tensile axis. The obtained results may be summaried as follows: 1) when the angle between fiber orientation and tensile axis was varied from 0$^{\circ}$ to 45$^{\circ}$ the yield and fracture stresses have a tendency to decrease with increase in the angle. Especially, the decrease rates in the yield and fracture stresses are changed remarkably in the range of 0$^{\circ}$ to 15$^{\circ}$. 2) The fracture strain has showed the maximum value when the angle between fiber orientation and tensile axis is 45$^{\circ}$, and showed the rapid rate of change from 15$^{\circ}$ to 45$^{\circ}$. 3) For the sample with same angle between fiber orientation and tensile axis the maximum dielectric strength under compressive stress is decreased with increase in tensile stress, when the compressive stress is increased as a parameter of tensile stress. 4) When the angle between fiber orientation and tensile axis is 45$^{\circ}$, the dielectric strength showed the worst value, as the mechanical strength did.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.224-231
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• 2000

The exfoliation of graphite (layer) was progressed due to the irreversible insertion of PC molecules between graphene layers, when propylene carbonate (PC) solvent was used as the organic solvents. The problem could be mitigated by the replacement of PC by ethylene carbonate (EC). But, the freezing point of EC-based electrolyte increased due to the high freezing point of $EC(36.2^{\circ}C)$. Therefore, EC+PC mixed electrolyte is expected as a good organic electrolyte for lithium ion battery. The EC-based organic electrolyte containing PC within pertinent quantity can be expected to have high molar conductivity and reduced exfoliation of graphite layer. The dielectric constant and molar conductivity of $LiPF_6/PC+EC+DEC$ electrolyte was investigated with a variation in the PC content. The electrochemical properties of carbon electrode in the electrolyte were also investigated. Molar conductivity and dielectric constant increased linearly by increasing the PC volume fraction in the electrolyte. The results of charge-discharge test for carbon/electrolyte/Li cell indicated that the initial irreversible specific capacity(IIC) of MCMB-6-28s and MPCF3000 decreased by the addition of $0.83 vol\%$ of PC, but increased with PC content over than $0.83 vol\%$. In the case of MPCF3000 and PCG100 having less than $10 vol\%$ PC, IIC was lower than 50 mAh/g. The discharge specific capacities varied with carbon material, but did not vary with PC content in the electrolyte.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.171.2-171.2
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• 2016

The 2-dimensiona electron gas (2DEG) layers have opened tremendous interests in the heterooxide interfaces formed between two insulating materials, especially between LaAlO3 and $SrTiO_3$. The 2DEG layers exhibit extremely high mobility and carrier concentrations along with metallic transport phenomena unlike the constituent oxide materials, i.e., $LaAlO_3$ and $SrTiO_3$. The current work inserted artificially the interfacial layer, $Sr_xCa_{1-x}TiO_3$ between $LaAlO_3$ and $SrTiO_3$, with the aim to controlling the 2-dimensional transports. The insertion of the additional materials affect significantly their corresponding electrical transports. Such features have been probed using DC and AC-based characterizations. In particular, impedance spectroscopy was employed as an AC-based characterization tool. Frequency-dependent impedance spectroscopy have been widely applied to a number of electroceramic materials, such as varistors, MLCCs, solid electrolytes, etc. Impedance spectroscopy provides powerful information on the materials system: i) the simultaneous measurement of conductivity and dielectric constants, ii) systematic identification of electrical origins among bulk-, grain boundary-, and electrode-based responses, and iii) the numerical estimation on the uniformity of the electrical origins. Impedance spectroscopy was applied to the $LaAlO_3/Sr_xCa_{1-x}TiO_3/SrTiO_3$ system, in order to understand the 2-dimensional transports in terms of the interfacial design concepts. The 2-dimensional conduction behavior system is analyzed with special emphasis on the underlying mechanisms. Such approach is discussed towards rational optimization of the 2-dimensional nanoelectronic devices.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.163-170
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• 2002

This paper proposes a $10\;{\mu}m$ thick oxide air-bridge structure which can be used as a substrate for RF circuits. The structure was fabricated by anodic reaction, complex oxidation and micromachining technology using TMAH etching. High quality films were obtained by combining low temperature thermal oxidation ($500^{\circ}C$, 1 hr at $H_2O/O_2$) and rapid thermal oxidation (RTO) process ($1050^{\circ}C$, 2 min). This structure is mechanically stable because of thick oxide layer up to $10\;{\mu}m$ and is expected to solve the problem of high dielectric loss of silicon substrate in RF region. The properties of the transmission line formed on the oxidized porous silicon (OPS) air-bridge were investigated and compared with those of the transmission line formed on the OPS layers. The insertion loss of coplanar waveguide (CPW) on OPS air-bridge was (about 2dB) lower than that of CPW on OPS layers. Also, the return loss of CPW on OPS air-bridge was less than about -20 dB at measured frequency region for 2.2 mm. Therefore, this technology is very promising for extending the use of CMOS circuitry to higher RF frequencies.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.7 s.98
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• pp.760-767
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• 2005

In this paper, we proposed a new type SIR bandpass filter using DAMLs. This filter is consisted of 2 layers with MEMS resonator layer and CPW feed line. DAMLs ring resonator is elevated with $10{\mu}m$ height from GaAs substrate. Using MEMS processing, we are able to realize SIR bandpass filter easily. Furthermore it is useful to integrate on conventional MMICs because it has CPW interfaces and ring resonator is isolated from substrate by air-gap. We optimized and measured the results that $S_{21}$ attenuation at rejected band is over 15 dB, insertion loss is inside the limit of 3 dB, and relative bandwidth is about $10\%$ at 60 GHz.