• Journal of Magnetics
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• v.12 no.2
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• pp.77-80
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• 2007

Recently there was a proposal for a spin filter by using the spin superlattice structure. In a certain energy range, the proposed structure exhibits a high spin filtering efficiency close to 100%. Unfortunately such energy range turns out to be narrow. In this paper, we report a method to widen the energy range by using an analogy to optical anti-reflection coating. In optics, it is well known that a stack of alternating layers of two dielectric materials can function as a highly transmissive or reflective filter for wide range of wavelength. Since electrons also have wave character as light, it would be possible to make an electronic analog of an optical filter. We demonstrate that alternating layers of two materials with different g-factors can function as a spin filter that allows electrons to be transmitted only when their spins point towards a certain particular direction. This spin-superlattice-based spin filter operates in wide energy ranges, curing the problem in the previous proposal.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.111-115
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• 2009

We present a study on the reflection of optically controlled microwave pulses from non uniform plasma layers in semiconductors. The transient response of the microwave pulses in different plasma layers has been evaluated by means of the reflection function of dielectric microstrip lines. The lines were used with an open-ended termination containing an optically induced plasma region, which was illuminated by a light source. The reflection characteristics impedance resulting from the presence of plasma is evaluated by means of the equivalent transmission line model. We have analyzed the variation of the transient response in a 0.01 cm layer with a surface frequency in the region of 128 GHz. In the reflection the variation of the diffusion length $L_D$ is large compared with the absorption depth $1/{\alpha}_l$. The variation of the characteristic response of the plasma layer with differentially localized pulses has been evaluated analytically. The change of the reflection amplitude has been observed at depths of 0.1 cm, 0.01 cm and $0.1{\times}10^{-5}$ cm respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.366-369
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• 2002

At present, the study of direct digital X-ray detector and indirect digital X-ray detector proceed actively. But it needs high thickness and high voltage in selenium for high ionization rate. Therefore, we carried out the study of electric characteristics of a-Se with additive ratio of Iodine in drafting study for developing Hybrid X -ray Sensor for complementing direct digital X -ray detector and indirect digital X-ray detector in this paper. On this, there are formed Amorphous selenium multi-layers by sticking phosphor layer$(Gd_{2}O_{2}S(Eu^{2+}))$ using optical adhesives of EFIRON Co. Amorphous selenium multi-layers having dielectric layer(parylene) has characteristics of low dark-current, high X-ray sensitivity. So we can acquired a enhanced signal to noise ratio. We make Amorphous selenium multi-layers with $30{\mu}m$ thickness on glass.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.122-122
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• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.05a
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• pp.28.1-28.1
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• 2007

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1019-1021
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• 2008

Multilayer transparent electrodes (MTE) based on an ultrathin metal layer assisted by additional dielectric or semiconducting layers are investigated as electrodes in OLEDs including an inverted geometry. A special attention is paid to their tuning capability in injection behavior and to their potential for ultra-flexible electrodes.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.159-161
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• 2007

We fabricated flexible OTFT-backplanes for the electrophoretic display(EPD). The OTFTs employed bottom contact structure on PEN substrate and used the cross-linked polyvinylphenol for gate insulator, pentacene for active layer. Especially, we used PVA/Acryl double layers for passivation of backplane as well as for pixel dielectric layer between backplane and EPD panel. The OTFT-EPD panel worked successfully anddemonstrated to display some patterns.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.207-207
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• 2012

Si quantum dot (QD) imbedded in a $SiO_2$ matrix is a promising material for the next generation optoelectronic devices, such as solar cells and light emission diodes (LEDs). However, low conductivity of the Si quantum dot layer is a great hindrance for the performance of the Si QD-based optoelectronic devices. The effective doping of the Si QDs by semiconducting elements is one of the most important factors for the improvement of conductivity. High dielectric constant of the matrix material $SiO_2$ is an additional source of the low conductivity. Active doping of B was observed in nanometer silicon layers confined in $SiO_2$ layers by secondary ion mass spectrometry (SIMS) depth profiling analysis and confirmed by Hall effect measurements. The uniformly distributed boron atoms in the B-doped silicon layers of $[SiO_2(8nm)/B-doped\;Si(10nm)]_5$ films turned out to be segregated into the $Si/SiO_2$ interfaces and the Si bulk, forming a distinct bimodal distribution by annealing at high temperature. B atoms in the Si layers were found to preferentially substitute inactive three-fold Si atoms in the grain boundaries and then substitute the four-fold Si atoms to achieve electrically active doping. As a result, active doping of B is initiated at high doping concentrations above $1.1{\times}10^{20}atoms/cm^3$ and high active doping of $3{\times}10^{20}atoms/cm^3$ could be achieved. The active doping in ultra-thin Si layers were implemented to silicon quantum dots (QDs) to realize a Si QD solar cell. A high energy conversion efficiency of 13.4% was realized from a p-type Si QD solar cell with B concentration of $4{\times}1^{20}atoms/cm^3$. We will present the diffusion behaviors of the various dopants in silicon nanostructures and the performance of the Si quantum dot solar cell with the optimized structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.286-286
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• 2016

Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

• Korean Journal of Materials Research
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• v.14 no.10
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• pp.731-736
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• 2004

Herein, we report on the co-firing of a low-K wiring substrate and a middle-K functional substrate in LTCC. Firstly, we researched the sintering behavior and dielectric properties of the low-k wiring substrate comprised by alumina and glass frit with ${\varepsilon}_r$, of $\sim7$ and the middle-k functional substrate comprised by $Ba_{5}Nb_{4}O_{15}$ and glass frit with ${\varepsilon}_r$, of $20\sim30$. The warpage and delamination between the hetero layers of the low-K and the middle-K composition were also studied. In particular, physical matching of the hetero layers could be possible by adjusting of the sintering properties of the composition. We observed that an introduction of the glass frit to the low- and middle-K substrate gives rise to a minimization of an effect given by separation of the hetero layers, and modification of the fraction of the glass frit accompanied by a variation of the composition could control the sintering behavior and its beginning temperature. In the case of co-firing of the L03 as the low-K wiring substrate composition and the M03 as the middle-K functional substrate composition at $875^{\circ}C$, we could fabricate a desirable structure of hetero layers without any kinds of structural defects such as separation, warpage, delamination, pore trap, etc. We suppose that the co-firing techniques described in this study would provide a helpful method to fabricate a LTCC multi-functional for the next generation.