• 한국결정성장학회지
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• 제10권2호
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• pp.140-144
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• 2000

($Pb_{0.91}$$La_{0.09}$)($Zr_{0.65}$$Ti_{0.35}$)$O_3$ thin films were prepared on ITO-coated glass by spin-coating. As $Pb_{0.9}$$La_{0.1}$)$TiO_3$ thin films were used as seeding layers, formation temperature of perovskite was reduced and theUrosette" structure was disappeared. PLZT thin films with a seeding layer of 40 nm thick showed a (100) preferred orientation and better dielectric and ferroelectric properties.ties.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1327-1329
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• 1998

It is very important to select superior inter-layer PMD(Pre Metal Dielectric) materials which can act as penetration barrier to various impurities created by CMP processes. In this paper, hot carrier degradation and device characteristics were studied with material variation of PMD-1 layers, which were split by LP-TEOS, SR-Oxide, PE-Oxynitride, PE-Nitride, PE-TEOS films. It was observed that the oxynitride and nitride using plasma was greatly decreased in hot carrier effect in comparison with silicon oxide. Consequently, silicon oxide turned out to be a better PMD-1 material than PE-oxynitride and PE-nitride. Also, LP-TEOS film was the best PMD-1 material Among the silicon oxides.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.344-344
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• 2010

A capacitor with engineered tunnel barrier composed of High-k materials has been fabricated. Variable oxide thickness (VARIOT) barrier consisting of thin SiO2/HfO2/Al2O3 (2/1/3 nm) dielectric layers were used as engineered tunneling barrier. We studied the electrical characteristics of multi stacked tunnel layers for various RTA (Rapid Thermal Anneal) and FGA (Forming Gas Anneal) temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.352.2-352.2
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• 2014

In this present work, we report a Cu-Mn alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between Mn-based interlayer interlayer, thermal stability was measured with various low-k dielectrics. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the Mn based self-formed barriers after annealing were determined by the C concentration in the dielectric layers.

• 한국광학회지
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• 제9권5호
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• pp.300-306
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• 1998

광학용 유전체 다층박막의 증착시 높은 열로 인해 형성되는 층간확산의 광학적 효과를 연구하였다. 연속적으로 변하는 굴절률 분포함수를 갖고 하나의 부분구조가 주기적으로 반복되는, 다층박막의 광특성 계산방법을 제시한다. 이 방법을 이용하여 Fabry-Perot형 여과막, 넓은 영역에 걸쳐 높은 반사율을 갖는 전반사경 및 반사 방지막에 대해 층간확산이 미치는 영향을 계산하여 투과 및 반사 스펙트럼을 얻었다. 층간확산으로 인하여 전반사경의스펙트럼 대역폭이 줄어들었으며 다층 반사방지막의 경우층의 수가 많을 때 특성이 악화되고 파장에 따른 반사율의 변화가 크게 되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1044-1046
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• 2009

Here we report the architecture for a non-volatile n-type memory paper field-effect transistor. The device is built using the hybrid integration of natural cellulose fibers (pine and eucalyptus fibers embedded in an ionic resin), which act simultaneously as substrate and gate dielectric, with amorphous GIZO and IZO oxides as gate and channel layers, respectively. This is complemented by the use of continuous patterned metal layers as source/drain electrodes.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1539-1541
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• 2000

Insulation layers in XLPE power cables may have some patterns generated in the manufacturing process. They are called 'flow patterns' and show flow history of molten polyethylene between inner and outer semiconducting layers. Flow patterns are even seen with naked human eyes and suspected to be inhomogeniety of insulation, weakening insulation performance. Investigated in this paper is electrical treeing resistance and ac breakdown strength according to flow patterns. Experiments of electrical treeing and ac breakdown strength by means of ramp tests were conducted using newly developed electrode system with point-to-plane structure and sphere-to-sphere structure, respectively. All results were analyzed with the application of statistics, showing little differences.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.188-193
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• 2008

Epoxy/Organically Modified Layered Silicate Nanocomposites were prepared by dispersing synthetic layered silicate modified with alkyl ammonium ions. In the dispersing process, the organically modified layered silicate were mixed in epoxy resin with shearing, and aggregation of the silicate were removed by centrifugal separation after mixing epoxy resin and silicates. Micrographs taken by transmission electron microscopy(TEM) indicate that the nanocomposites have a mixed morphology including both parallel silicate layers and exfoliated silicate layers area, As the thermal properties, the glass transition temperature of the nanocomposites was shifted to a higher temperature($+6^{\circ}C$)than pure epoxy. Furthermore, dispersion of OMLS will prevented relative permittivity from increasing at a high temperature above the glass transition temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.34-37
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• 2001

In this study, the capacitance-voltage properties of (Sr$_{1-x}$ .Ca$_{x}$)TiO$_3$(0.05$\leq$x$\leq$0.20)-based grain boundary layer ceramics were investigated. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1480~150$0^{\circ}C$ and 4 hours, respectively. The 2nd phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, $\varepsilon$$_{r}$>50000, tan$\delta$<0.05, $\Delta$C<$\pm$10%. The capacitance is almost unchanged below about 20[V] but it decreases slowly about 20[V]. The results of the capacitance-voltage properties indicated that the grain boundary was composed of the continuous insulating layers.ulating layers.s.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2004년도 SMICS 2004 International Symposium on Maritime and Communication Sciences
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• pp.74-76
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• 2004

It is the new promising method of obtaining the information about the state of a surface of a solid body, thin and multilayer structures. An idea of the method consists in reading and analyzing the relations U(t), dU/dt(t), dU/dt(U) on an electrical cell when anodizing an investigated object. By these relation it is possible to control the presence of impurities in the metal on the path of the anodization front, a structure and characteristics of the object being oxidized as well as of an oxide which is being formed during anodizing, the change in composition of the oxide layer, the thickness and composition of metallic and dielectric layers being a part of the layers boundaries.