• 한국재료학회지
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• 제19권2호
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1001-1007
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• 2001

In this study, high dielectric materials, (Pb,La)Ti $O_3$ thin films were fabricated by PLD (Pulsed Laser Deposition) method and investigated in terms of structural and electrical characteristics in order to develope the dielectric materials for the use of new capacitor layers of Giga bit-level DRAM. The deposition conditions were examined in order to fabricate uniform thin films through systematic changes of oxygen pressures and substrate temperature. The uniform thickness and smooth morphology of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were obtained at the conditions of substrate-target distance 5.5[cm], laser energy density 2.1[J/$\textrm{cm}^2$], oxygen pressure 200[mTorr] and substrate temperature 500[$^{\circ}C$]. After the (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were fabricated under the above conditions, they were post-annealed by RTA process in order to increase the dielectric constant. The film thickness of 1200 [$\AA$] had dielectric constant 821. Assuming that operating voltage is 2V, leakage current density of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films would result into 10$^{-7}$ [A/$\textrm{cm}^2$] and satisfied the specification of 256M DRAM planar capacitor, 4$\times$10$^{-7}$ [A/$\textrm{cm}^2$]m}^2$]

• 대한원격탐사학회지
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• 제13권2호
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• pp.151-163
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• 1997

본 논문에서는 동축선 끝단에서의 마이크로파 반사를 측정하여 수분 함유량을 산출하는 알고리즘을 제시한다. 전파 반사는 공기층과 토양층 사이의 유전율 변화에 의해 발생하므로 반사 계수에서 유전율을 얻는 기술을 연구하였다. 우선, 유전체에 접촉한 동축선 끝단의 등가회로를 선 정하여 미지의 회로 정수를 설정하였다. 다음에, 수분함유량을 알고 있는 토양을 측정하여 미지 회로 정수를 발견하고 반사 계수와 유전율의 관계식을 실험적으로 찾았다. 토양의 유전율은 주파 수, 토양 형태에도 영향을 받지만 주로 수분 함유량에 의해 결정되므로 기존의 실험식을 이용하 여 유전율로부터 수분 함유량을 계산할 수 있었다. 본 연구에서는 Network Analyzer을 이용하여 4.65 GHz에서 각종 토양의 반사 계수의 크기와 위상을 측정하기를 반복하여 복소수 형태의 유전 율과의 관계식을 산출하였다. 이 실험식은 다른 토양에 이용되어 그 정확도가 검증되었다.

• 한국인터넷방송통신학회논문지
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• 제19권4호
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• pp.21-26
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• 2019

본 논문에서는 2중 유전체층 사이의 저항띠 격자구조에 의한 TE(transverse electric) 산란 문제는 전자파 수치해석 방법으로 알려진 PMM(point matching method)를 이용하여 해석하였다. 경계조건들은 미지의 계수를 구하기 위하여 이용하였고, 산란 전자계는 Floquet 모드 함수의 급수로 전개하였고, 저항띠의 해석을 위해 저항 경계조건을 적용하였다. 저항띠의 폭과 주기, 2중 유전층 사이의 비유전율, 두께, 입사각 및 균일저항율에 대해 정규화된 반사과 투과전력을 계산하였다. 전반적으로, 도체 스트립에 대한 반사 전력은 비유전율의 값이 증가함에 따라 증가하였고, 균일저항율을 갖는 저항띠에 대한 반사 전력은 저항율의 값이 증가함에 따라 감소하였다. 본 논문의 제안된 구조에 대한 수치결과들은 기존 논문의 수치해석 결과들과 비교하여 매우 잘 일치하였다.

• 한국인터넷방송통신학회논문지
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• 제23권3호
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• pp.71-76
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• 2023

본 논문에서는 접지된 2중 유전체층 사이의 저항띠 격자구조에 의한 TE(transverse electric) 산란문제를 전자파 수치해석 방법으로 알려진 FGMM(fourier galerkin moment method)를 이용하여 해석하였다. 경계조건들은 미지의 계수를 구하기 위하여 이용하였고 산란 전자계는 Floquet 모드 함수의 급수로 전개하였으며, 저항띠의 해석을 위해 저항 경계조건을 적용하였다. 전반적으로 저항율이 작으면 저항띠에 유도되는 전류밀도의 크기가 증가하였고, 반사전력도 증가하였다. 균일 저항율을 가지는 경우, 유전체층의 비유전율이 증가하거나 또는 유전체 층의 두께가 증가할수록 반사전력은 감소하였다. 본 논문에서 제안된 구조에 대한 수치결과들은 기존 논문의 수치해석 결과들과 비교하여 매우 잘 일치하였다.

• 문화기술의 융합
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• 제9권3호
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• pp.619-624
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• 2023

본 논문에서는 2중 유전체층 사이의 저항띠 격자구조에 의한 TE(transverse electric) 산란 문제를 전자파 수치해석 방법으로 알려진 FGMM(fourier galerkin moment method)를 이용하여 해석하였다. 경계조건들은 미지의 계수를 구하기 위하여 이용하였고, 산란 전자계는 Floquet 모드 함수의 급수로 전개하였고, 저항띠의 해석을 위해 저항 경계조건을 적용하였다. 2중 유전체층의 문제를 취급하기 위하여 유전체층들의 두께와 비유전율을 동일한 값을 가지는 경우에 대해서만 수치계산하였다. 전반적으로, 저항띠 균일 저항율이 증가하면 저항띠에 유도되는 전류밀도는 감소하였고 반사 전력은 감소하였으며, 상대적으로 투과전력은 증가하였다. 본 논문에서 제안된 구조에 대한 수치결과들은 기존 논문의 수치해석 방법인 PMM의 결과들과 비교하여 매우 잘 일치하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.62-62
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• 2008

As micro-system move toward higher speed and miniaturization, requirements for embedding the passive components into printed circuit boards (PCBs) grow consistently. They should be fabricated in smaller size with maintaining and even improving the overall performance. Miniaturization potential steps from the replacement of surface-mount components and the subsequent reduction of the required wiring-board real estate. Among the embedded passive components, capacitors are most widely studied because they are the major components in terms of size and number. Embedding of passive components such as capacitors into polymer-based PCB is becoming an important strategy for electronics miniaturization, device reliability, and manufacturing cost reduction Now days, the dielectric films deposited directly on the polymer substrate are also studied widely. The processing temperature below $200^{\circ}C$ is required for polymer substrates. For a low temperature deposition, bismuth-based pyrochlore materials are known as promising candidate for capacitor $B_2Mg_{2/3}Nb_{4/3}O_7$ ($B_2MN$) multi layers were deposited on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system at room temperature. The physical and structural properties of them are investigated by SEM, AFM, TEM, XPS. The dielectric properties of MIM structured capacitors were evaluated by impedance analyzer (Agilent HP4194A). The leakage current characteristics of MIM structured capacitor were measured by semiconductor parameter analysis (Agilent HP4145B). 200 nm-thick $B_2MN$ muti layer were deposited at room temperature had capacitance density about $1{\mu}F/cm^2$ at 100kHz, dissipation factor of < 1% and dielectric constant of > 100 at 100kHz.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1744-1746
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• 1999

In this paper, we give pressure stimulation into organic ultra thin films and detected the induced displacement current properties, and then manufacture a device under the accumulation condition. In processing of a device manufacture, we can see the process is good from the change of a surface pressure and transfer ratio of area per molecule of organic ultra thin films. The structure of manufactured device is MIM(Au/polyimide LB films/AU), the number of accumulated 19 layers. I-V characteristic of the device is measured from -5[V] to +5[V]. The maximum value of measured current is increased as the number of accumulated layers are decreased. The insulation of a thin film is better as the interval between electrodes is larger, and the insulation properties of a thin film is better as the distance between electrodes is larger.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.1279-1282
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• 2005

Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. LB layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are $3{\sim}9$. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from -3 to +3[V].