• Journal of Adhesion and Interface
• /
• v.23 no.2
• /
• pp.53-58
• /
• 2022

Here, the surface characteristics of the dielectric were controlled by introducing the self-assembled monolayers (SAMs) as the intermediate layers on the surface of the AlOx dielectric, and the electrical performances of the organic charge modulated transistor (OCMFET) were significantly improved. The organic intermediate layer was applied to control the surface energy of the AlOx gate dielectric acting as a capacitor plate between the control gate (CG) and the floating gate (FG). By applying the intermediate layers on the gate dielectric surface, and the field-effect mobility (μ_OCMFET) of the OCMFET devices could be efficiently controlled. We used the four kinds of SAM materials, octadecylphosphonic acid (ODPA), butylphosphonic acid (BPA), (3-bromopropyl)phosphonic acid (BPPA), and (3-aminopropyl)phosphonic acid (APPA), and each μ_OCMFET was measured at 0.73, 0.41, 0.34, and 0.15 cm2V-1s-1, respectively. The results could be suggested that the characteristics of each organic SAM intermediate layer, such as the length of the alkyl chain and the type of functionalized end-group, can control the electrical performances of OCMFET devices and be supported to find the optimized fabrication conditions, as an efficient sensing platform device.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.153-153
• /
• 2012

Endpoint detection with plasma impedance monitoring and self-plasma optical emission spectroscopy is demonstrated for dielectric layers etching processes. For in-situ detecting endpoint, optical-emission spectroscopy (OES) is used for in-situ endpoint detection for plasma etching. However, the sensitivity of OES is decreased if polymer is deposited on viewport or the proportion of exposed area on the wafer is too small. To overcome these problems, the endpoint was determined by impedance signal variation from I-V monitoring (VI probe) and self-plasma optical emission spectroscopy. In addition, modified principal component analysis was applied to enhance sensitivity for small area etching. As a result, the sensitivity of this method is increased about twice better than that of OES. From plasma impedance monitoring and self-plasma optical emission spectroscopy, properties of plasma and chamber are analyzed, and real-time endpoint detection is achieved.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.9
• /
• pp.87-92
• /
• 1998

TM mode coupling coefficients for a generic five-layer DFB structure with trapezoidal and triangular gratings are calculated using the extended additional layer method. To determine the unperturbed field distributions of TM modes, a grating region is replaced by a new uniform layer whose inverse dielectric constant is the average value of the inverse dielectric constant of grating region in both longitudinal and transverse directions. Based on the self-consistent check, the validity of this method is established by comparing the results calculated by partitioning the grating region up to six uniform layers.

• Proceedings of the IEEK Conference
• /
• 2004.06b
• /
• pp.363-366
• /
• 2004

PZT thin films were formed by rf-magnetron sputtering on $Pt/Ti/SiO_2/Si$ substrate. Bulk PZT target containing $5\%$ excess PbO was used. They were formed with in-situ process at $650^{\circ}C$ as total thickness of 175 and 250 nm after the depositing of thin PZT films at room temperature, i. e. 2-step Sputtering. It was found that the ferroelectric perovskite phase is formed at $650^{\circ}C$ by XRD and the interface between room temp.-layer and $650^{\circ}C$ -layer is not existent. In the samples undergoing 2-step sputtering the dielectric constant was 600 or more and the leakage current density was $2{\times}10^{-7}A/cm^2$. So, we found that the room temp.-layer on the bottom electrode stabilize the underlaid layers.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2004.08a
• /
• pp.1046-1048
• /
• 2004

Performances of organic thin film transistors (OTFTs) can be detrimentally affected by the state of the gate dielectric. Because of the bad stability of polymers, OTFTs with polymer gate dielectrics often provide abnormal characteristics. In this study, we report the condensation effect of the polymer gate dielectric layer. For the observations of the effect of the condensation, the spin-coated polymer layers with various deposition conditions were fabricated and left under low vacuum condition for several days. It is observed that the thickness of polymer layer and the electrical characteristic of OTFTs vary with the condensation time.

• Electrical & Electronic Materials
• /
• v.11 no.10
• /
• pp.94-99
• /
• 1998

Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.894-897
• /
• 2006

The detailed studies regarding to the front and rear panel geometries and optical properties of composed layers were needed to improve the luminance and efficiency. 3-dimensional optical code can be used to analyze the variation of geometries and the changing of optical properties. The visible light distributions and illuminance results were simulated depending on the bus electrode position, ITO geometries and optical properties of dielectric layer. As the ITO area was decreased and the bus electrode was located at the outer part of cell, the illumination was increased. And we could find quantification which is related between dielectric layer and visible light distribution of PDP cell.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.563-566
• /
• 2003

We present wide-viewing characteristics of a twisted nematic liquid crystal display (TN LCD) achieved by adopting dielectric surface gratings (DSGs) as alignment layers. The experimental data and the numerical analyses consistently show that the optical compensation effect inherent to the TN LCD with the DSGs greatly reduces the contrast inversion of the TN LCD.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.24 no.4
• /
• pp.646-651
• /
• 1987

The photoconductive multilayer composed of glassy, porous, and fine-grained layers was fabdricated with Se and Sb2S3 by vacuum evaporation in order to be used as vidicon target. And its electrical, optical properties were investigatee. The fabrication conditions were as follow: the glassy layer was first deposited to have the thickness of 6500 \ulcornerat the deposition rate of 250\ulcornersec. High photosensitivity(\ulcorner=1) was obtained but its shortcoming was high dielectric constant. Therefore, the porous layer was added to lower dielectric constant and had 7500\ulcornerthick in the argon gas ambikent of 7x10-\ulcorner And the fine-grained layer was formed to prevent secondary electron emission and obtain good resolution. Its thickness was about 1700\ulcorner For the given vidicon target, the light transfer characteristic, that is, photosensitivity (\ulcorner) was measured to be 0.8 at the applied voltage of 25V. The spectral sensitivity was quite similar to that of the human eyes.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.51 no.7
• /
• pp.311-315
• /
• 2002

Chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD), inter-level dielectric (ILD) layers of multi-layer interconnections. In this paper, we studied the characteristics of polishing pad, which can apply shallow trench isolation (STI)-CMP process for global planarization of multi-level interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the defect level has shown little difference, however, the counts of scratch was detected less than 2 on JR111 pad. Through the above results, we can select optimum polishing pad, so we can expect the improvements of throughput and device yield.