• Bulletin of the Korean Chemical Society
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• v.20 no.11
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• pp.1340-1344
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• 1999

The electrochemical behavior of oxide layers on aluminium was studied using electrochemical impedance spectroscopy. Impedance spectra were taken at a compact and a porous oxide layer of Al. The anodic films on Al have a variable stoichiometry with gradual reduction of oxygen deficiency towards the oxide-electrolyte interface. Thus, the interpretation of impedance spectra for oxide layers is complicated, with the impedance of surface layers differing from those of ideal capacitors. This layer behavior with conductance gradients was caused by an inhomogeneous dielectric. The frequency response cannot be described by a single RC element. The oxide layers of Al are properly described by the Young model of dielectric constant with a vertical decay of conductivity.

• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.161-168
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• 1996

For the improvement of microelectronic thin film interconnection materials, dielectric passivation effects on the electromigration phenomena were studied. Using Al-1%Si, various shaped patterns were fabricated and dielectric passivation layers of several structures were deposited on the $SiO_2$ layer. Lifetime of straight pattern showed 2~5 times longer than the other patterns that had various line width and area. It is believed that the flux divergence due to the structural inhomogeneity and so the current crowding effects shorten the lifetime of thin film interconnections. The lifetime of thin film interconnections seems to depend on both the passivation materials and the passivation thickness. PSG/$SiO_2$ dielectric passivation layers showed longer lifetime than $Si_3N_4$ dielectric passivation layers. This results from the PSG on $SiO_2$ layer reduces stress and from the improvement of resistance to the moisture and to the mobile ion such as sodium. This is also believed that the lifetime of thin film interconnections seems to depend on the passivation thickness in case of the same deposition materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.867-871
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• 2013

The Ti adhesion layers were deposited onto the glass substrate for transparent capacitors using $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) dielectric thin films. Graphene was transferred onto the Ti/glass substrate after growing onto the Ni/$SiO_2$/Si using rapid-thermal pulse CVD (RTPCVD). The BMNO dielectric thin films were investigated for the microstructure, dielectric and leakage properties in the case of capacitors with and without Ti adhesion layers. Leakage current and dielectric properties were strongly dependent on the Ti adhesion layers grown for graphene bottom electrode.

• The Journal of the Convergence on Culture Technology
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• v.9 no.3
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• pp.721-726
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• 2023

In this paper, TM electromagnetic scattering problems for conductive strip grating between grounded double dielectric layers are analyzed by applying the FGMM(fourier galerkin moment method) and PMM(point matching method) known as a numerical method of electromagnetic field. The boundary conditions are applied to obtain the unknown field coefficients. In order to deal with the problem of grounded double dielectric layers, numerical calculation was performed only when the thickness and relative permittivity of the dielectric layers had the same value. As the thickness of the dielectric layer and the relative permittivity increased, the overall reflected power increased, and the minimum values of the reflected power shifted in the direction of increasing the strip width. The numerical results obtained by applying the numerical methods of FGMM and PMM to the structure proposed in this paper agree very well.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.460-464
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• 2020

This study reports the fabrication and application of semitransparent Cu nanoparticle layers. Spin coating and subsequent drying of a Cu colloid solution were performed to deposit Cu nanoparticle layers onto Si and glass substrates. As the spin speed of the spin coating increases, the density of the nanoparticles on the substrate decreases, and the agglomeration of nanoparticles is suppressed. This microstructural variation affects the optical properties of the nanoparticle layers. The transmittance and reflectance of the Cu nanoparticle layers increase with increasing spin speed, which results from the trade-off between the exposed substrate area and surface coverage of the Cu nanoparticles. Since the glass substrates coated with Cu nanoparticle layers are semitransparent and colored, it is anticipated that the application of a Cu nanoparticle-dielectric bilayer structure to transparent solar cells will improve the cell efficiency as well as aesthetic appearance.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.211-214
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• 1999

Periodical surfaces with the sawtooth profile are studied on their backscattering by the TE plane wave incident. The backscattering is calculated by the mode-matching method. The surfaces are perfect conductor and are covered with dielectric materials to make a flat surface. It is observed that a cover filled with multiple dielectric layers can be used to reduce the backscattering at an arbitrary incident angle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1143-1146
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• 2003

This paper was simulated the electric field distribution in dielectric tube with two layers and spherical dielectric in water. The reactor was made up of the spherical dielectric that is diameter : 2.5[mm], ${\epsilon}_r$ : 5, 25, 100, 1000, 5000 respectively and two glass plate being 2[mm] thickness, ${\epsilon}_r$ : 5 as electrode. The discharge gap was 9[mm]. As a result of the simulation, in case of being about the same value between the dielectric constant of spherical dielectric and water, when the reactor was applied to high voltage, dielectric polarization characteristic was trending toward disappearance. To get more strong electric field, the dielectric constant should be higher comparatively, Increasing the spherical dielectric constant, the location of equippotential line was shifting from the interior to the exterior.

• Interaction and multiscale mechanics
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• v.3 no.2
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• pp.157-171
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• 2010

In this paper, a theoretical method has been developed for the electric double layer interaction under condition of the variable dielectric permittivity of water. Using Poisson-Boltzmann equation (PBE), for one plate and two plates having similar or dissimilar constant charge or constant potential, we have investigated the electric double layer potential, its gradient and the disjoining pressure as well as the effect of variation of dielectric permittivity on these parameters. It has been assumed that plates are separated by a specific distance and contain a liquid solution in between. It is shown that reduction of the dielectric permittivity near the interfaces results in compression of electric double layers and affects the potential and its gradient which leads to a decreased electrostatic repulsion. In addition, it is shown that variation of dielectric permittivity in the case of higher electrolyte concentration, leads to a greater change in potential distribution between two plates.

• Journal of Information Display
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• v.2 no.3
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• pp.39-43
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• 2001

The glass compositions of $PbO-SiO_2-B_2O_3$ system and $P_2O_5-PbO-ZnO$ system for the transparent dielectric materials for front panel and $P_2O_5$-ZnO-BaO and $SiO_2-ZnO-B_2O_3$ for the reflective dielectric materials for back panel of PDP (Plasma Display Panel) were investigated. As a result, transparent dielectric materials for front panel showed good dielectric properties, high transparency, and proper thermal expansion matching to soda lime glass substrate. And the reflective dielectric layers for back panel were prepared from two series of parent glass and oxide filler. It was found that these glassceramics are useful materials for dielectric layers in PDP device, as they have similar thermal expansion to soda-lime glass plate, high reflectance, and low sintering temperature. In particular, the addition of $BPO_4$ and $TiO_2$ as fillers to $SiO_2-ZnO-B_2O_3$ system is considered to be the most effective for acquiring good properties of lower dielectric layer for PDP device.

• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.13-20
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• 1995

Effects of thermal annealing on the dielectric/piezoelectric properties of $Pb(Zn, Mg)_{1/3}Nb_{2/3}O_3-PbTiO_3$ ceramics (PZMNPT) with Zn/Mg=6/4) were examined across the rhombohedral/tetragonal morphotropic phase boundary (MPB). Both the relative dielectric permittivity ($\varepsilon$r)and the piezoelectric constant($d_33$)/electromechanical coupling constant ($k_p$)were increased by thermal annealing ($800^{\circ}$~$900^{\circ}C$) after sintering at $1150^{\circ}C$ for 1 hr. Based on the dielectric analysis using the series mixing model and the concept of a random distribution of the local Curie points, the observed improvements in the dielectric and piezoelectric properties of PZMN-PT were interpreted in terms of the elimination of PbO-rich amorphous intergranular layers(~1nm) induced by thermal annealing. A concrete evidence of the presence of amorphous grain-boundary layers in the unannealed (as-sintered) specimen was obtained by examining the structure of intergranular region using a TEM.