• Journal of the Korean Applied Science and Technology
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• v.35 no.3
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• pp.676-682
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• 2018

In order to study electrical properties of epoxy composites with various frequency. To measure of dielectric characteristics have been performed over a frequency range from 30[Hz] to 3[MHz] and a temperature range of $20[^{\circ}C]$, $100[^{\circ}C]$, $140[^{\circ}C]$. We observed values of dielectric constant and dissipation of the epoxy composites with various frequency. We were observed dielectric loss and dispersion in low frequency region. Also, we observed to decrease of the dielectric constant due to the effects of filler in high temperature region.

• Advances in materials Research
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• v.2 no.2
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• pp.99-109
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• 2013

In the present investigation, nanocomposite films with poly(methyl methacrylate) (PMMA) as a polymer matrix and barium titanate as a filler were prepared by solution casting method. Barium titanate nano particles were prepared using Ti(IV) triethanolaminato isopropoxide and hydrated barium hydroxide as precursors and tetra methyl ammonium hydroxide (TMAH) as a base. The nanocomposite films were characterized using XRD, FTIR, SEM and dielectric spectroscopy techniques. Dielectric measurements were performed in the frequency range 100 Hz-10 MHz. Dielectric constant of nanocomposites were found to depend on the frequency, the temperature and the filler fraction. Dissipation factors were also influenced by the frequency and the temperature but not much influenced by the filler fractions. The 10 wt% of BT-PMMA nanocomposite had the lowest dielectric constant of 3.58 and dielectric loss tangent of 0.024 at 1MHz and $25^{\circ}C$. The dielectric mixing model of Modified Lichtenecker showed the close fit to the experimental data.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2001.05a
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• pp.219-223
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• 2001

The on-line cure monitoring during the cure process of composite materials is important for better quality and productivity. The dielectric sensor for cure monitoring consists of base film and electrodes. Because the characteristic of dielectric sensor for the on-line cure monitoring is dependent on the base material, width and number of electrode, etc, the dielectric sensor should be standardized. And the selection of base film material of sensor is very important. In order to prevent the measuring errors generated from the increase of environmental temperature, the base film material should have stable dielectric constant with respect to environmental temperature. In this study, the newly developed dielectric sensor for cure monitoring was designed and the dissipation factor which is function of degree of cure was measured using the sensor. The relationship between the dissipation factor and degree of cure with respect to environmental temperature was investigated.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.11
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• pp.561-565
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• 2004

SiO₂ thin films are fabricated using sol-gel method and dipping method. Gelation time is faster according to increasing the amount of H₂O except H₂O/Si(OC₂H/sub 5/)₄=4. Initial viscosity is highest at H₂O/Si(OC₂H/sub 5/)₄=6. Gelation time is faster according to increasing the amount of CH₃COOH. The relative dielectric constant of thin films decreases a little according to increasing the measuring frequency. The dielectric dissipation factor of thin films increases a little below 100kHz and it increases rapidly over 100kHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.52-62
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• 2004

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for high-K dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs. The degradation in high-K dielectric MOSFETs is also identified as due to the additional coupling between the drain-to-source that occurs through the gate insulator, when the gate dielectric constant is significantly higher than the silicon dielectric constant. The technology parameters required to minimize the coupling through the high-K dielectric are identified. It is also shown that gate dielectric stack with a low-K material as bottom layer (very thin $SiO_2$ or oxy-nitride) will be helpful in minimizing FEBL. The circuit performance issues with high-K MOS transistors are also analyzed in this paper. An optimum range of values for the dielectric constant has been identified from the delay and the energy dissipation point of view. The dependence of the optimum K for different technology generations has been discussed. Circuit models for the parasitic capacitances in high-K transistors, by incorporating the fringing effects, have been presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1989.06a
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• pp.105-106
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• 1989

The effects of pyrochlore phase and micostructure on the dielectric properties. such as dielectric constant, dissipation factor, diffusensess coefficient and dielectric hysteresis characteristics, of Lead magnesium niobate(PMN) ceramics have been studied as a function of the amount of excess MgO. The pyrochlore phase in PMN was completely eliminated with the addition of 5 m/o excess MgO. Also, the dielectric constant and remanent polarization increased with increase in grain size, density and then decreased with grain growth inhibitation for further addition of excess MgO. The diffuseness coefficient showed a tendency nearly reverse to that for the dielectric constant and remanent polarization change.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.2
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• pp.83-87
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• 1984

Influence of the metallization during the manufacturing of the ceramic multilayer capacitor on the dielectric properties was studied as a change of the capacity and the dissipation factor. Due to the change of the relative dielectric constant as a function of the measuring temperature the influence of the metallization could be obtained and the change of the dissipation factor as a function of the measuring frequency was anaysed. In order to investigate the boundary effect between the metallization and the dielectric a kind of microstructure model at the internal Grain and Grain Boundary was constructed and tried to analyse the change of the dielectric properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.125-129
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• 2004

[ $BaTi_4O_9$ ] thin film were grown on $Pt/Ti/SiO_2/Si$ substrate using rf magnetron sputter, and the microstructure and dielectric properties of the thin films were investigated. For the film grown at $350^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$, the $BaTi_5O_{11}$ Phase was formed. However, the $BaTi_4O_9$ phase was formed when the growing temperature exceeded $450^{\circ}C$ The dielectric constant of the $BaTi_4O_9$ thin film grown at $550^{\circ}C$ and rapidly thermal annealed at $900^{\circ}C$ was about 40 at low frequency range($100kHz{\sim}1MHz$) and 36 at microwave range($1{\sim}10GHz$) which is very close to that of the bulk $BaTi_4O_9$ phase. The dissipation factor was very low, about 0.005 at low frequency as well as microwave range.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.137-142
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• 2000

The sintering and electrical properties of YMnO3 bulk ceramics were investigated with Y/Mn ratios(Mn rich ;0.80/1.20, 0.90/1.10, 0.95/1.05, and Y rich ; 1.00/1.00, 1.05/0.95, 1.10/0.90). The crystal structure of samples showed a hexagonal structure, and the sample of Y/Mn = 0.95/1.05 indicated higher c-axis oriented peak than other samples. In the case of Mn rich samples, the grain sizes were about 7.8${\mu}{\textrm}{m}$ and they showed 95% of theoretical density. Whereas, in the case of Y rich samples, the grain sizes were about 2.3${\mu}{\textrm}{m}$ and they showed 86%. The dielectric constant and dissipation factor of the Mn rich samples were smaller than those of the Y rich samples. The samples of Y/Mn = 0.90/1.10 showed the lowest a dissipation factor, and their dielectric constant, dissipation factor and Curie temperature were 36, 0.0136 and 68$0^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05b
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• pp.7-10
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• 2004

This paper presents the electrical properties of PTFE nozzle for a electrical apparatus. In the arcing environment in a electrical apparatus, radiation is considered to be the major energy transport mechanism from the arc to the wall. The fraction of the radiation power is emitted out of the arc and reaches the nozzle wall, causing ablation at the surface and in the depth of the wall. The energy concentration in the material leads to the depolymerization and eventually leads to the generation of decomposed gas as well as some isolated carbon particles. Adding some fillers into PTFE is expected to be efficient for improving the endurability against radiation. In this experiment, three kinds of fillers that have endurance in the high temperature environment were added into PTFE. Light reflectance of fillers was investigated. Dielectric constan and dissipation factor of PTFE composites were investigated. Dielectric constant and dissipation factor of the PTFE composites increased with increasing contents of the fillers.