• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.2
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• pp.75-80
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• 2006

In this paper, to detect and observation the void discharges pulse signal, AE signals and tree growth characteristics in case the high voltage is applied to a XLPE sample for a power cable. We also examined the partial discharge current pulse and AE signals with the increase of the applied voltage in XLPE insulation. The experimental results show that a branch-type tree grows in the presence of the voids, and a bush-type tree grows in the absence of the voids in both samples. A rate of tree growth increases abruptly in proportional to the deterioration time in the presence of the of the voids, but in the absence of the voids, a rate of tree growth decreases as time goes by and finally a breakdown occurs. The frequency band of AE signals that are generated from the partial discharges in a XLPE sample, one of solid dielectric materials, is about 1.0[MHz].

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.3-11
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• 1995

$(TiO_{2})$ thin films were deposited on p-Si(100) substrate by APMOCVD using titanium isopropoxide as a source material. The deposition mechanism was well explained by the simple boundary layer theory and the apparent activation energy of the chemical reaction controlled process was 18.2kcal /mol. The asdeposited films were polycrystalline anatase phase and were transformed into rutile phase after postannealing. The postannealing time and the film thikness as well as the postannealing temperature also affected the phase transition. The C-V plot exhibited typical charateristics of MOS diode, from which the dielectric constant of about 80 was obtained. The capacitance of the annealed film was decreased but those of the Nb or Sr doped films were not changed. I-V characteristics revealed that the conduction mechanism was hopping conduction. The postannealing and the doping of Nb or Sr cause to decrease the leakage current and to increase the breakdown voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.39-43
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• 1993

Electricial characteristics of gate dielectrics prepared by reoxidation of thermal $SiO_2$ in nitrous oxide gas have been investigated. 10 and 19nm-thick oxides were reoxidized at temperatures of $900-1000^{\circ}C$ for 10-60 min in $N_2O$ ambient. As reoxidation proceeds, it is shown that nitrogen concentration at $Si/SiO_2$ interface increases gradually through the AES analysis. Nitrogen pile-up at $Si/SiO_2$ interface acts as a oxidant diffusion barrier that reduces the oxidation rate significantly. And it not only strengthen oxynitride structure at the interface but improve the gate dielectric qualities. Reliabilities of oxynitride films are conformed by the breakdown distributions and constant current stress technique. Therefore, the oxynitride films made by this process show a good promise for future ULSI applications.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1202-1203
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• 2015

This paper describes the development of HVDC ${\pm}500kV$ polypropylene laminated paper (PPLP) mass-impregnated (MI) type cable system for HVDC transmission lines. As you know, mass-impregnated type cable generally has only insulating layer with the Kraft paper impregnated with a high-viscosity insulating compound. But polypropylene laminated paper is made of a layer of extruded polypropylene (PP) film sandwiched between two layers of Kraft paper. Thanks to PP film and its combination with Kraft paper, PPLP has higher AC, Impulse (Imp.) and DC breakdown (BD) strengths as well as lower dielectric loss than conventional Kraft paper insulation. In addition, Kraft MI cable has a limitation for the maximum conductor temperature as $55^{\circ}C$ But this PPLP MI cable has higher maximum conductor temperature than that of Kraft MI cable due to advantage of oil drainage characteristics. It is the most economic type of cable for HVDC transmission. Also HVDC ${\pm}500kV$ PPLP MI cable system was developed including land joints and outdoor-terminations. In order to prove the mechanical and electrical performances, the type test was carried out according to CIGRE recommendations. A full scale cable system has been tested successfully. And additional load cycle and polarity reversal tests on the cable system showed a higher performance compared with a similar mass impregnated paper cable.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Fire Science and Engineering
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• v.31 no.6
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• pp.91-98
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• 2017

The present paper is a study on the tracking characteristics depending on accelerated degradation of PVC insulation material. In order to insulation degradation of PVC insulation material, the Arrhenius equation, a type of accelerated degradation test formula, was used to conduct accelerated degradation experiments with experiment samples prepared at the following age equivalents: 0, 10, 20, 30 and 40 years. Afterwards, a tracking experiment was conducted on the accelerated experiment samples as part of the KS C IEC 60112 criteria. When measuring the PVC tracking features according to the accelerated aging, the results showed that when 0.1% of ammonium chloride was added to the PVC insulating material, but no tracking occurred. However, depending on the age equivalent, The results of analyzing the current waveform and voltage waveform of the tracking propagation process showed the age equivalent from 0 years to 40 years displayed a break down in insulation resistance and even the BDB(before dielectric breakdown) sections did not maintain the same functionality of the original material. Based on a criterion of an age equivalent of 0 years, material with an age equivalent of 10 years posed a 1.4 times greater risk, material with an age equivalent of 20 years posed a 2 times greater risk, material with an age equivalent of 30 years posed a 4.6 times greater risk, and material with an age equivalent of 40 years posed a 7 times greater risk.

• Applied Chemistry for Engineering
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• v.27 no.5
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• pp.495-501
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• 2016

Mineral oil has been widely used as an insulating oil for electrical transformers for a long time, but the necessity of employing new insulation oil such as vegetable oil has been increased due to urgent needs for the biodegradability when it leaks and also for the thermal stability at a higher operation temperature. Although specific periods are required between the production and consumption, there are still short of the data to prove the insulation oils' storage stability depending upon various circumstances and their resources. Thus, this paper demonstrates the insulation oils' oxidation characteristics of both mineral and vegetable oils when each was exposed to different environments for 12 weeks. From this test, some properties including total acid number, water content and dielectric breakdown were changed under specific conditions and resources. Vegetable oils showed higher hydrophilicity and water saturation than those of mineral oils due to their molecular compositions. Under sunlight exposure condition, all insulation oils oxidized and changed their properties when exposing to the direct light, regardless of the resource used.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.12 no.2
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• pp.99-107
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• 1998

This dissertationhas confirmed the non-flam mability of cast mold transformer that is increasingly used lately. As a research progress, the investigation has been performed on the installation status and each line of the subway system which have the most mold transformer accidents, and the impediment status of the transformer for rectifier and the high-voltage distribution transformer per each manufacturer. Then, a high voltage mold of the actual mold transformer has been installed in the horiwntal heating furnace and the heat has been applied by the standard heating temperature curve of KSF 2257(Fireproof testing meth od of the construction structures: 1993). Accordingly, the combustibility of the mold transformer based on the test results has been found that 78 minutes has been required for the complete burning per the KSF 2257 combustion test curve and that, after stopping the heat application of the horizontal furnace after ignition, the flame progress has not been made but shown as the self-extinguishing characteristics when the flame progress has been checked. Thus, the non-flammability and self-extinguishability of the mold transformer have been confirmed. The result of this dissertation has indicated that the accident involving mold transformer has been progressed and expanded by the dielectric breakdown or void due to the crack in the mold rather than a fire accident caused by a short-circuit or an overload.r an overload.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.83-90
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• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.