• Journal of the Korean Ceramic Society
• /
• v.48 no.4
• /
• pp.307-311
• /
• 2011

Solid solutions of the (1-x)$BiFeO_3-xSrTiO_3$ ceramic system (x = 0~0.4) are explored here in attempts to obtain multiferroic properties in these systems. The polarization-electric field hysteresis, magnetization-magnetic field curves, and dielectric properties are also characterized. This solid-solution system shows a crystal structural transition from a noncentrosymmetric (R3c) structure to a centrosymmetric (Pm-3m) structure at 0.3 < x < 0.4. The solid solution ceramic shows unsaturated M-H behavior and low remanent magnetization over the composition region of 0.1 ${\leq}$ x ${\leq}$ 0.3. The $0.7BiFeO_3-0.3SrTiO_3$ system shows the largest value of $M_s$ at 0.17 emu/g and the smallest value of $H_c$ at 1.06 kOe. The P-E hysteresis curves were not saturated under an electric field as high as E = 70 kV/cm. This system is considered to have multiferroic characteristics in the composition range of 0.1 ${\leq}$ x ${\leq}$ 0.3.

• Journal of the Korean Ceramic Society
• /
• v.48 no.4
• /
• pp.323-327
• /
• 2011

The effects of $Dy_2O_3$ and $Er_2O_3$ co-doping on electrical properties and temperature stability of barium titanate ($BaTiO_3$) ceramics were investigated in terms of microstructure and structural analysis. The dielectric constant and the insulation resistance (IR) of 0.7 mol% $Dy_2O_3$ and 0.3 mol% $Er_2O_3$ co-doped dielectrics had about 60% and 20% higher than the values of undoped one, respectively, and the temperature coefficient of capacitance (TCC) met the X7R specification. The addition of $Dy_2O_3$ contributed to electrical properties caused by increase of tetragonality; however, preferential diffusion of $Dy^{3+}$ ions toward A site in $BaTiO_3$ grain exhibited an adverse effect on temperature stability by grain growth. On the other hand, The $Er_2O_3$ addition in $BaTiO_3$ could affect the TCC behavior and the IR with suppression of grain growth caused by reinforcement of grain boundary and electrical compensation. Therefore, the enhanced electrical properties and temperature stability through the co-doping could be deduced from the increase of tetragonality and the suppression of grain growth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.5
• /
• pp.337-343
• /
• 2020

This study investigated the low temperature sintering with various templates of Bi-based lead-free piezoelectric ceramics. The effects of using CuO-coated Na_0.5Bi_4.5Ti₄O₁₅ templates on the sintering behavior as well as the dielectric, ferroelectric, and piezoelectric properties of Bi_1/2(Na_0.78K_0.22)_1/2TiO₃ (BNKT) ceramics have been examined. In comparison with the specimens sintered with the Na_0.5Bi_4.5Ti₄O₁₅ templates without CuO coating, those sintered with the CuO-coated Na_0.5Bi_4.5Ti₄O₁₅ templates showed larger template sizes as well as a larger electric field induced strain (S_max/E_max) of 422 pm/V after sintering at temperatures as low as 975℃. These results are promising for low-cost multilayer ceramic actuator applications.

• Transactions on Electrical and Electronic Materials
• /
• v.14 no.3
• /
• pp.121-124
• /
• 2013

The incorporation of 90 nm alumina particles into an epoxy matrix to form a composite microstructure is described in present study. It is shown that the use of ultrafine particles results in a substantial change in the behavior of the composite, which can be traced to the mitigation of internal charges when a comparison is made with conventional $Al_2O_3$ fillers. A variety of diagnostic techniques have been used to augment pulsed electro-acoustic space charge measurement to provide a basis for understanding the underlying physics of the phenomenon. It would appear that, when the size of the inclusions becomes small enough, they act cooperatively with the host structure and cease to exhibit interfacial properties. It is postulated that the $Al_2O_3$ particles are surrounded by high charge concentrations. Since $Al_2O_3$ particles have very high specific areas, these regions allow limited charge percolation through $Al_2O_3$ filled dielectrics. The practical consequences of this have also been explored in terms of the electric strength exhibited. It would appear that there was a window in which real advantages accumulated from the nano-formulated material. An optimum filler loading of about 0.5 wt.% was indicated.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.66 no.5
• /
• pp.800-805
• /
• 2017

The accelerated thermal ageing of CSPE (chlorosulfonated polyethylene) was carried out for 16.82, 50.45, and 84.09 days at $110^{\circ}C$, equivalent to 20, 60, and 100 years of ageing at $50^{\circ}C$ in nuclear power plants, respectively. As the accelerated thermally aged years increase, the insulation resistance and resistivity of the CSPE decrease, and the capacitance, relative permittivity and dissipation factor of those increase at the measured frequency, respectively. As the accelerated thermally aged years and the measured frequency increase, the phase degree of response voltage vs excitation voltage of the CSPE increase but the phase degree of response current vs excitation voltage decrease, respectively. As the accelerated thermally aged years increase, the apparent density, glass transition temperature and the melting temperature of the CSPE increase but the percent elongation and % crystallinity decrease, respectively. The differential temperatures of those are $0.013-0.037^{\circ}C$ and, $0.034-0.061^{\circ}C$ after the AC and DC voltages are applied to CSPE-0y and CSPE-20y, respectively; the differential temperatures of those are $0.011-0.038^{\circ}C$ and $0.002-0.028^{\circ}C$ after the AC and DC voltages are applied to CSPE-60y and CSPE-100y, respectively. The variations in temperature for the AC voltage are higher than those for the DC voltage when an AC voltage is applied to CSPE. It is found that the dielectric loss owing to the dissipation factor($tan{\delta}$) is related to the electric dipole conduction current. It is ascertained that the ionic (electron or hole) leakage current is increased by the partial separation of the branch chain of CSPE polymer as a result of thermal stress due to accelerated thermal ageing.

• Journal of Biomedical Engineering Research
• /
• v.34 no.3
• /
• pp.141-147
• /
• 2013

Ultrasonic shears is currently in wide use as an energy device for minimal invasive surgery. There is an advantage of minimizing the carbonization behavior of the tissue due to the vibrational energy transfer system of the transducer by applying a piezoelectric ceramic. However, the vibrational energy transfer system has a pitfall in energy consumption. When the movement of the forceps is interrupted by the tissue, the horn which transfers the vibrational energy of the transducer will be affected. A study was performed to recognize different tissues by measuring the impedance of the transducer of the ultrasonic shears in order to find the factor of energy consumption according to the tissue. In the first stage of the study, the voltage and current of the transducer connecting portion were measured, along with the phase changes. Subsequently, in the second stage, the impedance of the transducer was directly measured. In the final stage, using the handpiece, we grasped the tissue and observed the impedance differences appeared in the transducer To verify the proposed tissue distinguishing method, we used the handpiece to apply a force between 5N and 10N to pork while increasing the value of the impedance of the transducer from 400 ${\Omega}$.. It was found that fat and skin tissue, tendon, liver and protein all have different impedance values of 420 ${\Omega}$, 490 ${\Omega}$, 530 ${\Omega}$, and 580 ${\Omega}$, respectively. Thus, the impedance value can be used to distinguish the type of tissues grasped by the forceps. In the future study, this relationship will be used to improve the energy efficiency of ultrasonic shears.

• Polymer(Korea)
• /
• v.24 no.2
• /
• pp.259-267
• /
• 2000

Gel polymer electrolytes were prepared from poly(vinylidene fluoride-co-hexafluoro propylene)[P(VdF-co-HFP)] that had higher mechanical properties as well as higher dielectric constant ($\varepsilon$=8~13) than other polymeric matrix. Mechanical properties and ionic conductivities have been investigated as a function of blend ratio of electrolyte solution and polymer matrix. Ethylene carbonate (EC)/${\gamma}$-butyrolactone (${\gamma}$-BL) and lithium triflate (LiCF$_3$SO$_3$) were used as solvent and salt, respectively. The mechanical properties such as tensile strength, tensile modulus, compression modulus, and dynamic shear modulus were evaluated. The highest ionic conductivity was 1.09$\times$10$^{-3}$ S/cm for PVH40 containing 28.6 wt% of P(VdF-co-HFP) at $25^{\circ}C$. Tensile strength, tensile modulus and compression modulus were increased with P(VdF-co-HFP) content and abruptly changed between PVH70 and PVH80. Dynamic shear moduli showed a typical gel behavior and changed with shear strain.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.723-727
• /
• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.

• Proceedings of the KWS Conference
• /
• 2010.05a
• /
• pp.78-78
• /
• 2010

모바일 정보통신기기를 중심으로 패키지의 초소형화, 고집적화를 위해 플립칩 공법의 적용이 증가되고 있고 있으며 접속피치의 미세화에 따라 솔더 및 언더필을 사용하는 C4 공법보다 ACA(Anisotropic Conductive Adhesive), NCA (Non-conductive Adhesive) 등의 접착제를 이용하는 칩본딩 공법에 대한 요구가 증가하고 있다. 특히, NCA 공법의 경우 산업 현장의 대량생산에 대응하기 위해서는 접착제의 속경화 특성이 요구되어 진다. 일반적으로 접착제의 경화거동은 DSC(Differential Scanning Calorimeter)를 사용해 확인하지만, 수초 이내에 경화되는 접착제의 경우는 적용되기 어렵다. 본 연구에서는 이러한 전자패키지용 접착제의 속경화 거동을 효과적으로 평가할 수 있는 방법을 조사 하였다. 실험에서 사용된 접착제는 에폭시계 레진 기반에 이미다졸계 경화제를 사용한 기본적인 포뮬레이션을 사용하였고, 경화시간은 160^{\circ}C에서 1분 이내에 경화되는 특성을 가지고 있다. 경화 거동을 확인하기 위해서 isothermal DSC와 DEA(Dielectric Analysis)의 두가지 방법을 사용해 비교하였다. 두 실험 방법 모두 $160^{\circ}C$를 유지하며 경화 거동을 확인하였고, DoC(Degree of Cure)의 측정오차를 비교 분석하였다. DEA는 이온 모빌리티 변화에 따른 유전손실율을 측정하는 방법으로 80~90% 이후의 경화도는 측정되지 않았지만, 수초 이내에 경화되는 속경화 특성을 평가하기에 적합한 것으로 확인되었다.

• Journal of the Microelectronics and Packaging Society
• /
• v.13 no.2 s.39
• /
• pp.15-19
• /
• 2006

The resistance switching characteristics of amorphous $SiO_2$ and poly-crystalline $TiO_2$ were investigated. Both films exhibit well defined switching characteristics with low and high resistance states. From I-V curve analyses, it was found that the low resistance states of both films obey an ohmic conduction mechanism and the high resistance states show generation of a Schottky potential barrier. Regarding the mechanism for resistance switching of the binary oxide, it is suggested that the generation and annihilation of potential barriers accounts for the changes to the high resistance state and low resistance state, respectively. The device operation characteristic parameters such as reset and set voltages of $TiO_2$ are distinctly smaller than those of $SiO_2$, indicating that the values are related to the dielectric constant.