• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.869-873
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• 2004

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

• Composites Research
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• 제17권6호
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• pp.22-27
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• 2004

본 논문은 비대칭 샌드위치 구조체인 표면안테나 구조의 설계 및 제작 그리고 피로거동의 관한 연구이다. 사용될 재료는 전기적 특성. 유전율 그리고 기계적 특성을 동시에 만족하여야 한다. 안테나의 전기적 특성을 위해 샌드위치 구조 층 사이에 마이크로스트립 안테나를 삽입시켰고, 위성통신을 목적으로 적절한 대역에서 설계하였다. 최종 제작된 표면 안테나 구조물은 $16{\;}{\tiems}{\;}8$개의 배열안테나로 설계시의 목적에 부합하는 특성을 나타내었다. 4점 굽힘실험을 통하여 표면안테나 구조물의 정하중 및 피로거동을 분석하였다. 피로하중은 0.75(1.875 kN) 하중수준을 나타내었다. 파단 시 변위는 굽힘실험 변위량인 5 mm 보다 많은 5.42 mm에서 파괴가 발생함을 볼 수 있었다. 피로실험결과와 단일하중 시의 피로수명 예측 식을 비교하였다.

• 한국재료학회지
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• 제30권10호
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• pp.502-508
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• 2020

This paper focuses on the electrical properties and stability against DC accelerated aging stress of ZnO-V₂O₅-MnO₂-Nb₂O₅-Bi₂O₃-Co₃O₄-Dy₂O₃ (ZVMNBCD) varistor ceramics sintered at 850 - 925 ℃. With the increase of sintering temperature, the average grain size increases from 4.4 to 11.8 mm, and the density of the sintered pellets decreases from 5.53 to 5.40 g/㎤ due to the volatility of V₂O₅, which has a low melting point. The breakdown field abruptly decreases from 8016 to 1,715 V/cm with the increase of the sintering temperature. The maximum non-ohmic coefficient (59) is obtained when the sample is sintered at 875 ℃. The samples sintered at below 900 ℃ exhibit a relatively low leakage current, less than 60 mA/㎠. The apparent dielectric constant increases due to the increase of the average grain size with the increase of the sintering temperature. The change tendency of dissipation factor at 1 kHz according to the sintering temperature coincides with the tendency of the leakage current. In terms of stability, the samples sintered at 900 ℃ exhibit both high non-ohmic coefficient (45) and excellent stability, 0.8% in 𝚫E_B/E_B and -0.7 % in 𝚫α/α after application of DC accelerated aging stress (0.85 E_B/85 ℃/24 h).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.21-25
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• 2001

In this study, recovery of plasma etching· damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450 $\AA$/min at 30% additive Ar into $(Cl_2(80%)+CF_4 (20%))$ and 1100 $\AA$/min at 10% additive $O_2$ into $C(Cl_2(80%)+CF_4(20%))$. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

• 한국세라믹학회지
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• 제46권2호
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• pp.189-199
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• 2009

The Powder characteristics and sintering behavior of $SiO_2$ coated $BaTiO_3$ were studied. $BaTiO_3$ powders were synthesized by the liquid mix method developed by Pechini, and silica coating was prepared by alkoxide hydrolysis method with TEOS and ethanol. The particle size of the $BaTiO_3$ powders was 35 nm and the thickness of the $SiO_2$ coating layer was 5 nm. As the $SiO_2$ content increased, the $SiO_2$ layers improved the powder dispersion by increasing electrostatic repulsion between the $BaTiO_3$ particles. Effects of MgO coating on microstructure and dielectric properties of $BaTiO_3$ have been studied compared with mechanically MgO mixed $BaTiO_3$. MgO coated $BaTiO_3$ particles were prepared by a homogeneous precipitation method using $MgCl_2\cdot 6H_2O$ and urea. MgO coated $BaTiO_3$ exhibited homogeneous microstructure compared with mixed samples. XRD analysis revealed that Mg substitution for the Ti site in the MgO mixed sample was much greater than in the coated one. Electrical properties of MgO mixed and coated $BaTiO_3$ were affected by the diffusion behavior of Mg in $BaTiO_3$ lattice.

• 대한화학회지
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• 제33권5호
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• pp.496-503
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• 1989

란탄나이드 3가 (Pr(III)와 Yb(III))와 2,2,6,6-tetramethyl-3,5-heptanedione(dipivaloylmethane) 착물들의 전기화학적 거동을 DC와 DP 그리고 CV 방법으로 조사하였다. 란탄나이드 3가 착물들 중 Pr(III)의 환원은 Ag-AgCl 전극으로 Epc = -0.13 V와 -0.80 V 그리고 Yb(III)는 -0.02 Ⅴ로 1전자이동에 의한 것임을 알았고, 1차 화학평형반응이 가역과 비가역으로 진행되는 ErCr전극과정임을 DP와 CV로부터 알았다. 평형상수 lnK는 여러 용매들로부터 얻었고, 이들 상수는 용매의 유전상수가 감소함에 따라 증가됨을 알았다. 이들 반응에서 lnK는 여러 용매에 대한 ln(1/D)을 도시하면 좋은 직선관계에 있었고, 이 때 란탄나이드의 거동은 원자번호가 증가함에 따라서 lnK가 감소하였다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2001년도 추계종합학술대회
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• pp.644-647
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• 2001

이 연구에서는 P-MOS 커패시터에 Co $u^{60}$-${\gamma}$선을 조사한 후 조사선량 및 산화막 두께에 따른 전하의 거동을 고찰하고자 1[MHz]의 고주파 신호에서 정전용량-전압(C-V) 특성 및 유전손실계수-전압(D-V)특성을 측정하였다. C-V 특성에서 플랫밴드 전압과 문턱전압을 구하여 이들 파라메타와 D-V 특성의 피크와의 관련성을 검토하였다. C-V 특성이 P-MOS 커패시터의 정상상태의 전하의 거동 및 계면 상태특성을 해석하기가 편리하고 D-V 특성은 C-V 특성보다 산화막 내부의 공간전하분포와 계면상태의 밑도 등을 더 명확하게 파악할 수 있으며 산화막내 캐리어의 전도철상에 관한 미시적 전하 거동의 고찰에도 편리함이 확인되었다.

• 한국전기전자재료학회논문지
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• 제15권4호
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• pp.319-324
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• 2002

In this study, the reduce of plasma etching damage in PZT thin film with addictive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively coupled plasma. The etch rates of PZT thin films were 1450 ${\AA}/min$ at 30% additive Ar and 1100 ${\AA}/min$ at 10% auditive $O_2$ into $Cl_2/CF_4$ gas mixing ratio of 8/2. In order to reduce plasma damage of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures at $O_2$ atmosphere. From the hysteresis curries, the ferroelectric properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed PZT films is consistent wish the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x ray photoelectron spectroscopy (XPS) analysis, the intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.21-25
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• 2001

In this study, recovery of plasma etching damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of Cl$_2$/CF$_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450$\AA$/min at 30% additive Ar into (Cl$_2$(80%)+CF$_4$ (20%)) and 1100$\AA$/min at 10% additive $O_2$ into C(Cl$_2$(80%)+CF$_4$ (20%)). In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of Ti$_{x}$O$_{y}$ is recovered by $O_2$ recombination during rapid thermal annealing process.s.s.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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• pp.146-150
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• 2001

Microwave model and high-frequency measurement of the ACF flip-chip interconnection was investigated using a microwave network analysis. S-parameters of on-chip and substrate were separately measured in the frequency range of 200 MHz to 20 GHz using a microwave network analyzer HP8510 and cascade probe. And the cascade transmission matrix conversion was performed. The same measurements and conversion techniques were conducted on the assembled test chip and substrate at the same frequency range. Then impedance values in ACF flip-chip interconnection were extracted from cascade transmission matrix. ACF flip chip interconnection has only below 0.1nH, and very stable up to 13 GHz. Over the 13 GHz, there was significant loss because of epoxy capacitance of ACF. However, the addition of SiO$_2$filler to the ACF lowered the dielectric constant of the ACF materials resulting in an increase of resonance frequency up to 15 GHz. High frequency behavior of metal Au stud bumps was investigated. The resonance frequency of the metal stud bump interconnects is higher than that of ACF flip-chip interconnects and is not observed at the microwave frequency band. The extracted model parameters of adhesive flip chip interconnects were analyzed with the considerations of the characteristics of material and the design guideline of ACA flip chip for high frequency applications was provided.