• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• Journal of the Korean Vacuum Society
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• v.7 no.3
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• pp.167-272
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• 1998

The fluorine doped silicon oxide (SiOF) intermetal dielectric (IMD) films havc been of interest due to their lower dielectric constant and compatibility with existing process tools. However, instability issues related to hond and increasing dielectric constant due to water absorption when the SiOF film was exposured to atmospheric ambient. Therefore, the purpose nf this research is to study the effect of post oxygen plasma treatment on the resistance of nioisture absorption and reliability of SiOF film. Improvement of moisture ahsorption resistance of SiOF film is due to the forming of thin $SiO_2$ layer at the SiOF film surface. It is thought that the main effect of the improvement of moisture absorption resistance was densification of the top layer and reduction in the numher of Si-F honds that tend to associate with OH honds. However, the dielectric constant was inucased when plasma treatment time is above 5 min. In this study, therefore, it is thought that the proper plasma treatment time is 3 min when plasma treatment condition is 700 W of microwave power, 3 mTorr of process pressure and $300^{\circ}C$ of substrate temperature.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.196-199
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• 2012

CdS thin film was prepared on glass substrate by chemical bath deposition in an alkaline solution. The optical properties of CdS thin film were investigated using spectroscopic ellipsometry. The real (${\varepsilon}_1$) and imaginary (${\varepsilon}_2$) parts of the complex dielectric function ${\varepsilon}(E)={\varepsilon}_1(E)+i{\varepsilon}_2(E)$, the refractive index n(E), and the extinction coefficient k(E) of CdS thin film were obtained from spectroscopic ellipsometry. The normal-incidence reflectivity R(E) and absorption coefficient ${\alpha}(E)$ of CdS thin film were obtained using the refractive index and extinction coefficient. The critical points $E_0$ and $E_1$ of CdS thin film were shown in spectra of the dielectric function and optical constants of refractive index, extinction coefficient, normal-incidence reflectivity, and absorption coefficient. The dispersion of refractive index was analyzed by the Wemple-DiDomenico single-oscillator model.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.8
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• pp.411-416
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• 2006

A new method on the evaluation of insulation oil was proposed. Terahertz time-domain spectroscopy (THz-TDS) was applied to investigate the properties of the insulating oil. For the diagnostics of oil degradation, three kinds of oils have been analyzed by THz-TDS. The degraded oil showed different optical and electrical constants compared with a new one. Generally, the power absorption coefficient, the refractive index, the dielectric constant and loss $tan{\delta}$ of the oil increase as the aging of insulating oil proceed. And the characteristics of two kind of insulation oil, 1-4 and 7-4, was compared in terahertz spectral region. Difference in refractive index and complex dielectric constant has been observed between the samples. The results of this study suggest that THz-TDS is a promising new means for evaluating degradation and identification of insulating oil.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.366-371
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• 2012

In this paper, fabricated by MEMS uncooled micro-bolometer detector for the study in the infrared sensitivity enhancement. Absorption layer SiOx-Metal series MDTF (metal-dielectric thin film) by high absorption rate and has a high thermal coefficient of resistance, low noise characteristics were implemented. Then MDTF were made in a vacuum deposition method. And MDTF for the analysis of the physical properties of silicon wafers were fabricated, TCR (temperature coefficient of resistance) value was made in order to measure the glass wafer and FT-IR (Fourier Transform Infrared spectroscopy) values were made in order to measure the germanium window. The analyzed results of MDTF -3 [%/K] has more characteristics of the TCR. And 8~12 um wavelength region close to 70% in the absorption characteristic.

• Journal of Radiation Protection and Research
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• v.41 no.4
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• pp.339-343
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• 2016

Background: Evaluation of deoxyribonucleic acid (DNA)-strand break is important to elucidate the biological effect of ionizing radiations. The conventional methods for DNA-strand break evaluation have been achieved by Agarose gel electrophoresis and others using an electrical property of DNAs. Such kinds of DNA-strand break evaluation systems can estimate DNA-strand break, according to a molecular weight of DNAs. However, the conventional method needs pretreatment of the sample and a relatively long period for analysis. They do not have enough sensitivity to detect the strand break products in the low-dose region. Materials and Methods: The sample is water, methanol and plasmid DNA solution. The plasmid DNA pUC118 was multiplied by using Escherichia coli JM109 competent cells. The resonance frequency and Q-value were measured by means of microwave dielectric absorption spectroscopy. When a sample is located at a center of the electric field, resonance curve of the frequency that existed as a standing wave is disturbed. As a result, the perturbation effect to perform a resonance with different frequency is adopted. Results and Discussion: The resonance frequency shifted to higher frequency with an increase in a concentration of methanol as the model of the biological material, and the Q-value decreased. The absorption peak in microwave power spectrum of the double-strand break plasmid DNA shifted from the non-damaged plasmid DNA. Moreover, the sharpness of absorption peak changed resulting in change in Q-value. We confirmed that a resonance frequency shifted to higher frequency with an increase in concentration of the plasmid DNA. Conclusion: We developed a new technique for an evaluation of DNA damage. In this paper, we report the evaluation method of DNA damage using microwave dielectric absorption spectroscopy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.656-661
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• 2013

In this study, the moisture content, charge discharge current, electrostatic capacity and dielectric loss tangent are measured for the specimen of bisphenol type epoxy resin which is mixed with squared amorphous silica filler and dipped in hot water of $50^{\circ}C$ for 169 days. The results of this study are listed below. The longer of deposition day, the charge and discharge current was increased. It is considered that the reason is because there was water attack through the squared silica surface. The longer of deposition day, the absorption rate of all specimens was increased. It found that the absorption rate reached saturated state after 100 days. The higher frequency and the longer of deposition day, the $tan{\delta}$ was decreased. Also, It found that the $tan{\delta}$ and electrostatic capacity of the specimen which is mixed with squared filler are greater.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.156-159
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• 2000

In this paper, the physical and electrical properties of epoxy composites are investigated at boiling absorption condition to observe the influences of moisture. Also, in order to improve water resistance of matrix resin, IPN method was introduced and the influence was investigated. In order to analyze the basic physical properties of samples, scanning electron microscopy method was utilized, and impulse voltage dielectric strength was measured. As a result, it was verified that, in case of IPN samples, the ratio of moisture absorption was decreased due to the improvement of adhesion strength, and impulse voltage dielectric strength of SN sample was degraded abruptly as boiling time and filler content were increasing, while IPN samples were slowly degraded due to the improvement of adhesion strength.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.47-52
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• 2009

We studied the electrical characteristics of low-k SiOCH interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1 sccm step with the constant flow rate of 60 sccm $O_2$ in process chamber. The vibrational groups of SiOCH thin films were analyzed by FT!IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. The heat treatment on SiOCH thin films reduced the FTIR absorption intensity of the Si-O-$CH_3$ bonding group and Si-$CH_3$ bonding group but increased the intensity of Si-O-Si(C) bonding group. The SiOCH ILD films could have low dielectric constant $k\;{\simeq}\;2$ and also be reduced further by decreasing the $CH_3$ group density and increasing Si-O-Si(C) group density through annealing process.

• 전기의세계
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• v.19 no.5
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• pp.8-16
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• 1970

The characteristics of dielectric absorption and dispersion in polymerized materials produced in Korea was investigated in MHz band and at several sets of temperature. For this study the theoretical basis stood on the Cole-Cole's empirical formula and it has been extended to the form convenient to investigate the observation. As the result, it has been confirmed that in most cases, two or much more sorts of dipole participate in dielectric propertics of these polymers and the materials containing aromatic molecular structure have, in general, greater loss angle than those constructed chain type molecular structure.