• Title/Summary/Keyword: Dielectric Test

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A Study on Failure Analysis of Low Voltage Breakers with Aging (경년열화에 따른 배선용 차단기류의 고장점 분석 연구)

  • Cho, Han-Goo;Lee, Un-Yong;Lee, You-Jung;Lee, Hae-Ki;Kang, Seong-Hwa
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.501-502
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    • 2006
  • In this paper, new and aging sample of MCCB and ELCB are investigated the main performance test such as short circuit test, mechanical and electrical endurance test, dielectric test and surge current test. The surface conditions of new and aging sample are analyzed by SEM, TGA and DSC. The ELCB occurred badness mainly in short circuit test and surge current test. The badness cause of short circuit test was confirmed due to imperfect contact of contact part.

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Sealing Integrity of polymeric ZnO Surge Arresters (고분자 피뢰기의 기밀특성에 관한 연구)

  • Liang, He-Jin;Han, Se-Won;Cho, Han-Goo;Kim, In-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.258-261
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    • 1997
  • The sealing integrity is related to the safe operation of arrester the prime failure reason of porcelain housed arresters is moisture ingress. To be a meaningful tests a polymer arrester sealing test must be a realistic acceleration of field service. We think the test should be an accelerating course of actual temperatures, the enduring property to mechanical load and temperatures should be considered together. A union test method consisting of the thermal mechanical test and thermal cycling test is proposed to test the sealing integrity of polymeric arresters, which uses dielectric loss, leakage current 1mA DC voltage and partial discharge as the diagnostic techniques, and the test results were presented. The comparison states that the TMTCUT method is suitable fur the test of sealing integrity of polymeric arresters. .

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An experimental study for boiling heat transfer enhancement under electric fields (전기장하에서의 비등 열전달 촉진에 관한 실험적 연구)

  • O, Si-Deok;Gwak, Ho-Yeong
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.20 no.7
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    • pp.2298-2314
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    • 1996
  • Electric field effect on boiling of refrigerants R11, R113, and FC72 has been investigated experimentally. One purpose of the experimental investigation is to determine the effects of the electrode arrangements on electrohydrodynamic boiling of the above mentioned liquids. The test equipment employed in the experiment consists of a shell and tube heat exchanger with six or six and twelve rows of electrode wires around the tube. It has been found that the applied voltage promotes the boiling heat transfer coefficient except FC72. Boiling heat transfer enhancement obtained is about 230% for R11, 280% for R113. It has also been observed that bubbles detached from the tube aggregate at the place where the electrical gradient force balances with the buoyancy one. These aggregated bubbles force to decrease the boiling heat transfer coefficient as well as to reduce the voltage needed to the dielectric breakdown.

A study of dielectric strength and insulating property for particle contamination Under SF6/N2 Mixture (혼합가스의 이물 존재시 절연 특성 연구)

  • Jeong, Dong-Hoon;Woo, Su-Youl;Seo, Kyoung-Bo;Kim, Jin-Ho
    • Proceedings of the KIEE Conference
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    • 2011.07a
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    • pp.1262-1263
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    • 2011
  • Sulfur hexafluoride is the most commly used insulation gas in electrical systems. Gas insulated systems are widely used in the electric power industry for transmission and distribution of electrical energy. When $SF_6$ was first discovered, the potential application was only considered for insulation because of good dielectric properties. But the widespread use of $SF_6$ gas by electric power and other industries has led to increase concentrations of $SF_6$ gas in the atmosphere. This concern as to possible effects on global warming because $SF_6$ is a potent greenhouse gas. That's why firstly we studied uniform and nonuniform field property by mixing $SF_6$ and N2 gas. This paper presents the dielectric strength and insulating property for particle contamination under $SF_6/N_2$ mixtures. Two types of mixed gases(50% $SF_6$_50%$N_2$, 20% $SF_6$_80%$N_2$) were applied. We performed tests for the length and shape of particle. Test gas pressure is from 0.3 to 0.7 Mpa. The study was conducted to develop environment-friendly insulating material for GIS that can reduce $SF_6$ gas and make a design criteria for mixtures.

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Development of Oil Change Warning Algorithm and Display Device (오일교환경보 알고리즘 및 표시장치 개발)

  • Chun, Sang Myung
    • Tribology and Lubricants
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    • v.30 no.3
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    • pp.168-176
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    • 2014
  • This paper presents an engine oil change warning algorithm based on the test results of a small dip-stick-gage-type engine-oil-deterioration-detection sensor, software to realize the algorithm and a display device to apply the software. The algorithm determines the engine oil deterioration condition from the rate of change in the dielectric constant based on the average measured capacitance at $80^{\circ}C$ after the engine stops. The rate of change in the dielectric constant at the time for oil change correlates with the time that one of recommended warning limits for engine oil physical properties such as TAN (Total Acid Number), TBN (Total Base Number) and viscosity is first reached. At this point, a warning signal for oil change appears on the display device like a smart-phone or individual display device. The frames of smartphone app have three stages. The user can directly input all of the thresholds into the frame of the smartphone app. The screen of the display device comprises one frame for each warning signature with the related message. The user can input the thresholds to the device through a USB cable connected to a personal computer.

Concentration dependent dielectric properties of Barium Titanate/Polyvenylidene Fluoride (PVDF) and (Bi0.5Na0.5)0.94Ba0.06TiO3/Poly(VDF-TrFE) composite

  • Roy, Ansu K.;Ahmad, Z.;Prasad, A.;Prasad, K.
    • Advances in materials Research
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    • v.1 no.4
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    • pp.285-297
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    • 2012
  • The present study addresses the problem of quantitative prediction of effective complex relative permittivity of Barium Titanate/Polyvenylidene Fluoride (PVDF) and $(Bi_{0.5}Na_{0.5})_{0.94}Ba_{0.06}TiO_3$/Poly(VDF-TrFE) biphasic ceramic-polymer composites. Theoretical results for effective relative permittivity derived from several dielectric mixture equations were fitted to the experimental data taken from the works of Prasad et al. (2010), Wang et al. (2004), Takenaka et al. (1991) and Yamada et al. (1982). The study revealed that out of the different test equations, only a few equations like modified Rother-Lichtenecker equation, Dias-Dasgupta equation or Rao equation for the real part and Bruggeman equation for the imaginary part of complex permittivity well fitted the corresponding experimental results. In the present study, some of the equations were used in their original forms, while some others were modified by choosing suitable shape-dependent parameters in order to get reasonably good agreement with experimental results. Besides, the experimental results have been proposed in the form of a mathematical model using first order exponential growth, which provided excellent fits.

Dielectric Characteristics in Smectic Phase

  • Song, Jun-Ho;Coi, Suck;Kim, Yong-Bae;Kumar, Satyendra;Souk, Jun-Hyung;Shin, Sung-Tae
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.419-422
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    • 2002
  • We have studied dielectric properties in the smectic phases of 4-(6-ethoxy-1-trifluoromethyl-hexyloxycarbonyl)-phenyl-4-Nonyloxybiphenyl-4-carboxylat ( TFMEOHPNBC ) having fluorine attached to one of its benzene rings. Homogeneous and homeotropic 1.5 and 5${\mu}m$ thick test cells were prepared to analyze molecular dynamic property. We measured capacitance as a function of temperature in the frequency range between 20 Hz and 100 kHz by using HP4284A LCR meter. We observed that the homogeneous cell has high dielectric constant causing dipole moment in smectic $C^{\ast}$ phase, but we can see the dipole moments are canceled out in antiferroelectric phase. It is found that there are two kind of the relaxation director fluctuation below 100 kHz. The first is ionic or space charge contribution below 10 Hz, and the second is Goldstone mode near 1-2 kHz. We will discuss molecular dynamics in smectic phase from extra information such as x-ray and electrooptic data.

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Turn-to-Turn Dielectric Characteristics of Coils for HTSFCL (고온초전도 한류기용 코일의 턴간 절연 특성)

  • Baek, Seung-Myeong;Joung, Jong-Man;Lee, Chang-Hwa;Nguyen, Van Dung;Kim, Sang-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.08a
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    • pp.15-18
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    • 2003
  • Fault current limiters (FCL) are extensively needed to suppress fault currents, especially for trunk power systems heavily connected to high voltage/large current transmission lines. Due to its ideal electrical behavior, high-temperature superconductor fault current limiter (HTSFCL) becomes one of the most important developing trends of limiters in power system. This paper describes the result of an investigation of the dielectric characteristics of turn-to-turn insulation for pancake and solenoid type reactor coil in liquid nitrogen. The influence of thickness in a variety length, on AC, DC and impulse surface flashover has been investigated. Also, the relationships between the number of turn and breakdown characteristics were clarified. The information gathered in this test series should be helpful in the design of liquid nitrogen filled DC reactor type HTSFCL.

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Ferroelectric Properties of Bi3.25La0.75 Ti3O12 Thin Films with Excess Bi Contents for Non-Volatile Memory Device Application (비휘발성 메모리 소자응용을 위한 과잉 Bi 첨가에 따른 BLT 박막의 강유전 특성)

  • 김경태;김창일;강동희;심일운
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.9
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    • pp.764-769
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    • 2002
  • The effect of excess Bi contents on the ferroelectric properties of B $i_{3.25}$ L $a_{0.75}$ $Ti_3$ $O_{12}$ (BLT) thin films has been investigated. Bismuth lanthanum titanate thin films with excess Bi contents were prepared onto Pt/Ti/ $SiO_2$/Si substrate by metalorganic decomposition (MOD) technique. The structure and morphology of the films were analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. From the XRD analysis, BLT thin films show polycrystalline structure and the layered-perovskite phase was obtained over 10% excess of Bi contents. As a result of ferroelectric characteristics related to the Bi content of the BLT thin film, the remanent polarization and dielectric constant decreased with increasing over Bi content of 10% excess. The BLT film with Bi content of 10% excess was measured to have a dielectric constant of 326 and dielectric loss of 0.024. The BLT thin films showed little polarization fatigue test up to 3.5$\times$10$^{9}$ bipolar switching cycling.

Dielectric Passivation and Geometry Effects on the Electromigration Characteristics in Al-1%Si Thin Film Interconnections

  • Kim, Jin-Young
    • Journal of Korean Vacuum Science & Technology
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    • v.5 no.1
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    • pp.11-18
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    • 2001
  • Dielectric passivation effects on the EM(electromigration) have been a great interest with recent ULSI and multilevel structure tends in thin film interconnections of a microelectronic device. SiO$_2$, PSG(phosphosilicate glass), and Si$_3$N$_4$ passivation materials effects on the EM resistance were investigated by utilizing widely used Al-1%Si thin film interconnections. A standard photolithography process was applied for the fabrication of 0.7㎛ thick 3㎛ wide, and 200㎛ ~1600㎛ long Al-1%Si EM test patterns. SiO$_2$, PSG, and Si$_3$N$_4$ dielectric passivation with the thickness of 300 nm were singly deposited onto the Al-1%Si thin film interconnections by using an APCVD(atmospheric pressure chemical vapor deposition) and a PECVD(plasma enhanced chemical vapor deposition) in order to investigate the passivation materials effects on the EM characteristics. EM tests were performed at the direct current densities of 3.2 $\times$ 10$\^$6/∼4.5 $\times$ 10$\^$6/ A/cm$^2$ and at the temperatures of 180 $\^{C}$, 210$\^{C}$, 240$\^{C}$, and 270$\^{C}$ for measuring the activation energies(Q) and for accelerated test conditions. Activation energies were calculated from the measured MTF(mean-time-to-failure) values. The calculated activation energies for the electromigration were 0.44 eV, 0.45 eV, and 0.50 eV, and 0.66 eV for the case of nonpassivated-, Si$_3$N$_4$passivated-, PSG passivated-, and SiO$_2$ passivated Al-1%Si thin film interconnections, respectively. Thus SiO$_2$ passivation showed the best characteristics on the EM resistance followed by the order of PSG, Si$_3$N$_4$ and nonpassivation. It is believed that the passivation sequences as well as the passivation materials also influence on the EM characteristics in multilevel passivation structures.

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