• 제목/요약/키워드: Dielectric Materials

검색결과 2,112건 처리시간 0.027초

A Review on Dielectric Breakdown of Anodic Oxide Films on Aluminum Alloys

  • Hien Van Pham;Cheolnam Yang;Sungmo Moon
    • 한국표면공학회지
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    • 제57권4호
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    • pp.254-264
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    • 2024
  • This paper reviews the dielectric breakdown resistance and behavior of anodic oxide films in air environment. It begins with a description of the dielectric breakdown mechanisms of dielectric materials. The paper then introduces different types of dielectric materials and compares them in terms of dielectric strength, thermal conductivity, mechanical strength and cost. Next, the paper summarizes various fabrication methods for dielectric aluminum oxide layers, discussing the advantages and disadvantages of each method. Finally, it provides an overview of current studies on the dielectric breakdown properties of anodic aluminum oxide films formed on different aluminum alloys in various electrolytes.

Fabrication and Characterization of Dielectric Materials of Front and Back Panel for PDP

  • Chang, Myeong-Soo;Pae, Bom-Jin;Lee, Yoon-Kwan;Ryu, Byung-Gil;Park, Myung-Ho
    • Journal of Information Display
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    • 제2권3호
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    • pp.39-43
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    • 2001
  • The glass compositions of $PbO-SiO_2-B_2O_3$ system and $P_2O_5-PbO-ZnO$ system for the transparent dielectric materials for front panel and $P_2O_5$-ZnO-BaO and $SiO_2-ZnO-B_2O_3$ for the reflective dielectric materials for back panel of PDP (Plasma Display Panel) were investigated. As a result, transparent dielectric materials for front panel showed good dielectric properties, high transparency, and proper thermal expansion matching to soda lime glass substrate. And the reflective dielectric layers for back panel were prepared from two series of parent glass and oxide filler. It was found that these glassceramics are useful materials for dielectric layers in PDP device, as they have similar thermal expansion to soda-lime glass plate, high reflectance, and low sintering temperature. In particular, the addition of $BPO_4$ and $TiO_2$ as fillers to $SiO_2-ZnO-B_2O_3$ system is considered to be the most effective for acquiring good properties of lower dielectric layer for PDP device.

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유전체를 활용한 초고속 에너지 충/방전 소자 기술 (Recent Progress in Dielectric-Based Ultrafast Charging/Discharging Devices)

  • 최현수;류정호;윤운하;황건태
    • 한국전기전자재료학회논문지
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    • 제35권4호
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    • pp.322-332
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    • 2022
  • Energy storage capacitors based on dielectric ceramics with superior polarization properties and dielectric constant can provide much higher output power density due to their very fast energy charging/discharging rates, which are particularly suitable for operating pulsed-power devices. For an outstanding energy storage performance of dielectric capacitor, a large recoverable energy density could be derived by introducing a slim polarization-electric field hysteresis loop into dielectric materials by various technical approaches. Many research teams have explored various dielectric capacitor technologies to demonstrate high output power density and ultrafast charging/discharging behavior. This article reviews the recent research progress in high-performance dielectric capacitors for pulsed-power electronic applications.

상온 분사 공정을 이용하여 제조한 고에너지 밀도 세라믹 유전체 커패시터 (High Energy Density Dielectric Ceramics Capacitors by Aerosol Deposition)

  • 송현석;이건;예지원;정지윤;정대용;류정호
    • 한국전기전자재료학회논문지
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    • 제37권2호
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    • pp.119-132
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    • 2024
  • Dielectric ceramic capacitors present high output power density due to the fast energy charge and discharge nature of dielectric polarization. By forming dense ceramic films with nano-grains through the Aerosol Deposition (AD) process, dielectric ceramic capacitors can have high dielectric breakdown strength, high energy storage density, and leading to high power density. Dielectric capacitors fabricated by AD process are expected to meet the increasing demand in applications that require not only high energy density but also high power output in a short time. This article reviews the recent progress on the dielectric ceramic capacitors with improved energy storage properties through AD process, including energy storage capacitors based on both leadbased and lead-free dielectric ceramics.

Gate dielectric based on organic-inorganic hybrid polymer in organic thin-film transistors

  • Lee, Seong-Hui;Jeong, Sun-Ho;Moon, Joo-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.727-729
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    • 2007
  • Inorganic-organic hybrid polymer provides various advantages including low-temperature process, high dielectric constant and direct photo-patterning. The hybrid dielectric was synthesized by the sol-gel process in which an acid-catalyzed solution of Si alkoxide and Zr alkoxide was used as a precursor. The electrical performance of transistors with hybrid dielectric was investigated.

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복합재료 경화도 측정을 위한 유전 센서 (Dielectric sensor for cure monitoring of composite materials)

  • 김학성;권재욱;김진국;이대길;최진경;김일영
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2001년도 춘계학술발표대회 논문집
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    • pp.219-223
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    • 2001
  • The on-line cure monitoring during the cure process of composite materials is important for better quality and productivity. The dielectric sensor for cure monitoring consists of base film and electrodes. Because the characteristic of dielectric sensor for the on-line cure monitoring is dependent on the base material, width and number of electrode, etc, the dielectric sensor should be standardized. And the selection of base film material of sensor is very important. In order to prevent the measuring errors generated from the increase of environmental temperature, the base film material should have stable dielectric constant with respect to environmental temperature. In this study, the newly developed dielectric sensor for cure monitoring was designed and the dissipation factor which is function of degree of cure was measured using the sensor. The relationship between the dissipation factor and degree of cure with respect to environmental temperature was investigated.

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Effects of Crystal Structure on Microwave Dielectric Properties of Ceramics

  • Kim, Eung-Soo;Jeon, Chang-Jun;Kim, Sung-Joo;Kim, Su-Jung
    • 한국세라믹학회지
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    • 제45권5호
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    • pp.251-255
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    • 2008
  • Microwave dielectric properties of $MgTiO_3,\;MgWO_4,\;MgNb_2O_6$, and $MgTa_2O_6$ were investigated based on the structural characteristics. The dielectric constant (K) was dependent on the dielectric polarizabilities of the specimens, and the deviation of the observed dielectric polarizabilities (${\alpha}_{obs.}$) from the theoretical dielectric polarizabilities (${\alpha}_{theo.}$) were decreased with increasing of Mg-site bond valence. Quality factors (Qf) were affected by the sharing type of $MgO_6$ and $BO_6$ octahedra. Temperature coefficient of resonant frequency (TCF) was decreased with increasing of average octahedral distortion.

Zirconium Titanate 세라믹 유전체에서 $Ta_2O_{5}$ 첨가가 유전특성에 미치는 영향 (The Influence of $Ta_2O_{5}$ Addition on Dielectric Characteristics of Zirconium Titanate Ceramics)

  • 이석진;이창화;이상석;최태구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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    • pp.129-132
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    • 1992
  • Rutile was among the first dielectric materials used. However, rutile exhibits a very high temperature coefficient of capacitance (about -750[ppm/$^{\circ}C$]) which resticts its practical application. Since this first use of titania, other materials have also been studied with the object of decreasing the temperature dependence whilst retaining favorable dielectric loss, Q, and relative permittivity. The temperature coefficient of temperature compensation capacitor is +100~750[ppm/$^{\circ}C$], dielectric constant 10~150. Low loss ceramics with dielectric constants in the 10~150 range also found application. Recently, their applications are extended in EMI filter and dielectric materials for microwave. There temperature coefficient of dielectric materials approaches 0[ppm/$^{\circ}C$]. The dielectric preperties of zirconia titanate ceramics prepared by addition of $Ta_2O_{5}$ were investigated.

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Dielectric Breakdown Behavior of Anodic Oxide Films Formed on Pure Aluminum in Sulfuric Acid and Oxalic Acid Electrolytes

  • Hien Van Pham;Duyoung Kwon;Juseok Kim;Sungmo Moon
    • 한국표면공학회지
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    • 제56권3호
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    • pp.169-179
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    • 2023
  • This work studies dielectric breakdown behavior of AAO (anodic aluminum oxide) films formed on pure aluminum at a constant current density in 5 ~ 20 vol.% sulfuric acid (SA) and 2 ~ 8 wt.% oxalic acid (OA) solutions. It was observed that dielectric breakdown voltage of AAO film with the same thickness increased with increasing concentration of both SA and OA solutions up to 15 vol.% and 6 wt.%, respectively, above which it decreased slightly. The dielectric breakdown resistance of the OA films appeared to be superior to that of SA films. After dielectric breakdown test, cracks and a hole were observed. The crack length increased with increasing SA film thickness but it did not increase with increasing OA film thickness. To explain the reason why shorter cracks formed on the OA films than the SA films after dielectric breakdown test, the generation of tensile stresses at the oxide/metal interface was discussed in relation to porosity of AAO films obtained from cross-sectional morphologies.