• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.82-83
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• 2007

DBD type을 이용한 remote plasma에서 발생된 대기압 플라즈마를 이용하여, PR에 대한 식각 실험을 진행하였다. 과거 습식 화학적 공정에서 오던 기술적 제한의 극복과 진공 플라즈마 가지는 단점을 극복하기 위해 대기압 플라즈마를 이용한 건식 세정에 관한 연구를 진행하였고, 이 때 Gas는 $N_2/O_2$+$SF_6$ 의 조합으로 사용하였으며, 각 gas의 유량에 다른 remote 플라즈마의 전기적, 광학적 특성에 대해 관찰하였다.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.543-549
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• 2006

Polyimides (PI) are treated with $He/O_2$ and $He/O_2/NF_3$ atmospheric pressure rf dielectric barrier discharge in order to investigate the roles of $NF_3$ that is one of the PI etching gases. Surface changes are analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and contact angle measurement. The surface roughness of PI and the ratio of C=O, which is hydrophilic functional group, is more increased by $He/O_2/NF_3$ discharge than by $He/O_2$ discharge. The C=O species on the PI surface is increased up to 30 percent with rf power. The surface roughness of PI is increased from 0.4 to 11 nm with rf power. The water drop contact angles on PI, however, are reduced from $65^{\circ}\;to\;9^{\circ}$ by plasma treatment independently of $NF_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.719-722
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• 2003

Ferroelectric $Pb(Zr_{1-x}Ti_x)O_3$ (PZT) films were deposited on (001) MgO single crystals using sol-gel method. Structural properties and surface morphologies of PZT films were investigated using an X-ray diffractometer and a scanning electron microscopy, respectively. The dielectric properties of PZT films were investigated with the dc bias field using interdigitated capacitors (IDC) which were fabricated on PZT films using a thick metal layer by photolithography and dry etching process. The small signal dielectric properties of PZT films were calculated by a modified conformal mapping method with low and high frequency data, such as capacitance measured by an impedance gain/phase analyzer at 100 kHz and reflection coefficient (S-parameter) measured by a HP 8510C vector network analyzer at 1 -20 GHz. The IDC on PZT films exhibited about 67% of capacitance change with an electric field of 135 kV/cm at 10 GHz. These PZT thin films can be applied to tunable microwave devices such as phase shifters, tunable resonators and tunable filters.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.5-8
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• 2009

In this paper, a high-quality low-temperature co-fired ceramic (LTCC) solenoid inductor using a solder ball and an air cavity on a silicon wafer for three-dimensional (3-D) system-in-package (SiP) is proposed. The LTCC multi-layer solenoid inductor is attached using Ag paste and solder ball on a silicon wafer with the air cavity structure. The air cavity is formed on a silicon wafer through an anisotropic wet-etching technology and is able to isolate the LTCC dielectric loss which is equivalent to a low k material effect. The electrical coupling between the metal layer and the LTCC dielectric layer is decreased by adopting the air cavity. The LTCC solenoid inductor using the solder ball and the air cavity on silicon wafer has an improved Q factor and self-resonant frequency (SRF) by reducing the LTCC dielectric resistance and parasitic capacitance. Also, 3-D device stacking technologies provide an effective path to the miniaturization of electronic systems.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.113-120
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• 1994

Silicon flow sensor that can detect the velocity and direction of air flow was designed and fabricated by integrated circuit process and bulk micromachining technique. The flow sensor consists of three-layered dielectric diaphragm, a heater at the center of the diaphragm, and four thermopiles surrounding the heater at each side of diaphragm as sensing elements. This diaphragm structure contributes to improve the sensitivity of the sensor due to excellent thermal isolation property of dielectric materials and their tiny thickness. The flow sensor has good axial symmetry to sense 2-D air flow with the optimized sensing position in the proposed structure. The sensor is fabricated using CMOS compatible process followed by the anisotropic etching of silicon in KOH and EDP solutions to form I$\mu$ m thick dielectric diaphragm as the last step. TCR(Temperature Coefficient of Resistance) of the heater of the fabricated sensors was measured to calculate the operating temperature of the heater and the output voltage of the sensor with respect to flow velocity was also measured. The TCR of the polysilicon heater resistor is 697ppm/K, and the operating temperature of the heater is 331$^{\circ}C$ when the applied voltage is 5V. Measured sensitivity of the sensor is 18.7mV/(m/s)$^{1/2}$ for the flow velocity of smaller than 10m/s.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.171-175
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• 1995

Optimum condition of remote plasma enhanced chemical vapor deposition using orthogonal array method was chosen. Characteristics of oxide films deposited by RPECVD with SiH$_{4}$ and N$_{2}$O gases were investigated. Etching rate of the optimized SiO$_{2}$ films in P-etchant was about 6[A/s] that was almost the same as that the high temperature thermal oxide. The films showed high dielectric breakdown field of more than 7[MV/cm] and a resistivity of 8*10$^{13}$ [.ohmcm] around at 7[MV/cm]. The interface trap density of SiO$_{2}$/Si interface around the midgap derived from the high frequency C-V curve was about 5*10$^{10}$ [/cm$^{2}$eV]. It was observed that the dielectric constant of the optimized SiO$_{2}$ film was 4.29.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.67 no.4
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• pp.214-220
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• 2018

Light sources induced by gas discharge using rare gases have been widely used in the thin film deposition, the surface modification and the polymer etching. A dielectric barrier discharge (DBD) has been developed in order to consistently emit light and control the wavelength of the emission light. However, much research on the characteristics of the movement of discharge particles is required to improve the efficiency of the light lamp and the life-time of the light apparatus in detail. In this paper, we developed a He DBD discharge simulation tool and investigated the characteristics of discharge particles which were electrons, two positive ions ($He^+$, $He_2^+$) and 5 excited particles ($He^*(1S)$, $He^*(3S)$, $He^*$, $He^{**}$, $He^{***}$). The discharge currents showed the transition from pulse mode to continuous mode with the increase of power. With the accumulated charges on the barrier walls, the discharge current was rapidly increased and caused oscillation of the discharge voltage. As the gas pressure increased, $He_2^+$ and $He^*(3S)$ became the dominant activated particles. The input power was mostly consumed by electrons and $He_2^+$ ion. And the change curve showed that power consumption by electrons increased more with gas pressure than with source voltage or frequency.

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.322-326
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• 2011

Etch process of silicon dioxide layer by using capacitively coupled plasma (CCP) is currently being used to manufacture semiconductor devices with nano-scale feature size below 50 nm. In typical CCP plasma etcher system, plasmas are generated by applying the RF power on upper electrode and ion bombardment energy is controlled by applying RF power to the bottom electrode with the Si wafer. In this case, however, etch results often drift due to heating of the electrode during etching process. Therefore, controlling the temperature of the upper electrode is required to obtain improvement of etch repeatability. In this work, we report repeatability improvement during the silicon dioxide etching under extreme process conditions with very high RF power and close gap between upper and bottom electrodes. Under this severe etch condition, it is difficult to obtain reproducible oxide etch results due to drifts in etch rate, critical dimension, profile, and selectivity caused by unexpected problems in the upper electrode. It was found that reproducible etch results of silicon dioxide layer could be obtained by controlling temperature of the upper electrode. Methods of controlling the upper electrode and the correlation with etch repeatability will be discussed in detail.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.8-11
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• 2001

In this study. the recovery of plasma induced damage in the etched PZT thin film with $O_2$ re-annealing have been investigated. The PZT thin films were etched as a function of $Cl_2/Ar$ and additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etch rates of PZT thin films were $1600\dot{A}/min$ at $Cl_{2}(80%)/Ar(20)%$ gas mixing ratio and $1970\dot{A}/min$ at 30 % additive $CF_4$ into $Cl_{2}(80%)/Ar(20)%$. The etched profile of PZT films was obtained above 70 by SEM. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT phase revealed by x-ray diffraction (XRD). From XPS analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of TixOy is recovered by $O_2$ recombination during rapid thermal annealing process. From AFM images, it shows that the surface roughness of re-annealed sample after etching is improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.21-25
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• 2001

In this study, recovery of plasma etching· damage in PZT thin film with additive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively induced plasma. The etch rates of PZT thin films were 1450 $\AA$/min at 30% additive Ar into $(Cl_2(80%)+CF_4 (20%))$ and 1100 $\AA$/min at 10% additive $O_2$ into $C(Cl_2(80%)+CF_4(20%))$. In order to recovery properties of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures in at $O_2$ atmosphere. From the hysteresis curves, ferroelectrical properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed sample is consistent with the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x-ray photoelectron spectroscopy (XPS) analysis, intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.