• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.29-32
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• 2005

Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1453-1456
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• 2009

Transparent sol-gel hybrid dielectric material (hybrimer) coating films were fabricated by spin coating and photo or thermal curing of sol-gel derived oligosiloxane resins. Hybrimer coating films are suitable as the passivation layer of TFT in AMLCD due to low dielectric constant, small loss tangent, low leakage current density, high transmittance and thermal stability.

• 센서학회지
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• 제30권1호
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• pp.51-55
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• 2021

We demonstrated a polymer dielectric with low leakage characteristics through an optimal blade coating method for low-cost and large-scale fabrication of metal-insulator-metal (MIM) capacitors. Cross-linked poly(4-vinylphenol) (C-PVP), which is a typically used polymer dielectric, was coated on a 10 × 10 cm indium-tin-oxide (ITO) deposited glass substrate by changing the deposition temperature (TD) and coating velocity (VC) in the blade coating. During the blade coating, the thickness of the thin c-PVP varied depending on TD and VC owing to the 'Landau-Levich (LL) regime'. The c-PVP-dielectric-based MIM capacitor fabricated in this study showed the lowest leakage current characteristics (10-6 A/㎠ at 1.2 MV/㎠, annealing at 200 ℃) and uniform electrical characteristics when TD was 30 ℃ and VC was 5 mm/s. In addition, at TD = 30 ℃, stable leakage characteristics were confirmed when a different electric field was applied. These results are expected to positively contribute to applications with next-generation electronic devices.

• Journal of Electrical Engineering and information Science
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• 제2권3호
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• pp.77-81
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• 1997

In his work, the influence of wire type conducting particles on the insulation reliability of GIS has been systematically investigated when the epoxy resin based dielectric coating was made on he inner side of outer electrode. For this purpose, coaxial cylinder-type electrode was adopted in 362 kV chamber and various sizes of Cu conducting particle were used under different gas pressures. In order to elucidate the coating effect on the gas insulation, different thickness of dielectric coating has been considered and then the lift-off voltage and flashover voltages have been measured. The results shown that the dielectric coating has a remarkable influence by restraining the movement of particle in GIS system, and thus GIS insulation reliability is noticeably improved.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권9호
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• pp.429-433
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• 2006

PZT(80/0) powder was prepared by a sol-gel method and PZT thick films were fabricated by the screen-printing method on the alumina substrates. The coating and drying procedure was repeated 4 times. And then the PZT(20/80) precusor solution was spin-coated on the PZT thick films. A concentration of a coating solution was 0.5mol/L and the number of coating was varied from 0 to 6. The porosity decreased and the grain size increased with increasing the number of coatings. The thickness of the PZT-6(6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PZT(20/80) sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 275 and 3.5%, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $19.8{\mu}C/cm^2$, 13.7kV/cm and 130kV/cm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.665-668
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• 1999

Thin films of Pb(Zr,Ti)O$_3$ were fabricated by means of the sol-gel spin-coating method and the multi-coating of eight coating numbers. The thin films were dried on the temperature range of 250 ~ 400($^{\circ}C$), whenever the specimens were dried after each coating Processing. The fabricated ferroelectric thin films of lead zirconate titanate(PZT) were treated with the rapid thermal annealing(RTA) at 650($^{\circ}C$),or 3(min), and direct insertion thermal annealing(DITA) at 650($^{\circ}C$), for 30(min). The measured properties of dielectric thin films were following: The good results of dielectric properties were shown by the RTA specimen. The saturation polarization(Ps), remanent polarization(Pr), coercive field (Ec), dielectric constant and dielectric loss factor of the RTA specimen were estimated to be about 27.1[ $\mu$ C/$\textrm{cm}^2$], 13.7[ $\mu$ C/$\textrm{cm}^2$], 55.6(kV/cm), 786 and 6.4(%) respectively.

• 한국정보통신학회논문지
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• 제19권6호
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• pp.1283-1288
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• 2015

일반적으로 암호연산이 수행되는 IC 칩 회로는 강한 전자기 신호를 외부로 방사시키는 경향이 있다. 암호 칩 근방에서 루프 안테나와 같은 전력 수집 계측 장비를 활용하면 계측된 전자기 신호에 의해 암호 키의 동정이 가능하다. 이와 같은 비침투형 공격에 대응하기 위한 한 방법으로서 IC 칩 외부로 방사되는 전자기 신호를 억압하기 위해 칩 상부에 다중 유전체 슬래브 구조를 가지도록 구성하는 방법을 도입하였다. 다중 유전체 슬래브는 Bragg 반사특성을 가지도록 적절하게 구성하여 구현하였고 반사응답 특성을 구하여 그 유효성을 검증하였다. 실험결과로서 유전체 코팅의 두께는 2mm로서 수직 입사파에 대한 반사응답 특성은 91% 수준을 달성하였다.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.53-58
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• 2002

Electrical insulation and mechanical properties of the plasma sprayed oxide ceramic coatings were studied before and after the sealing treatment of the ceramic coatings. Plasma sprayed A1$_2$O$_3$-TiO$_2$ coating as the reference coating was sealed using three commercial sealants based on polymer. Penetration depth of the sealants to the ceramic coating was evaluated directly from the optical microscope using a fluorescent dye. It is estimated that the penetration depth of the sealants to the ceramic coating is from 0.2 to 0.5 mm depending on the sealants used. The preliminary test results with a DC puncture tester imply that the dielectric breakdown voltage mechanism of plasma sprayed ceramic coatings has been determined to be a corona mechanism. Dielectric breakdown voltage of the as-sprayed and as-ground samples have shown a linear trend with regard to the thickness showing an average dielectric strength of 20 kV/mm for the thickness scale studied. It is also shown that grinding the coating before sealing and adding fluorescent dye do not agent the penetration depth of sealants. All of the microhardness, two-body abrasive wear resistance, bond strength, and surface roughness of the ceramic coating after the sealing treatment are improved. The extent of improvement is different from the sealants used. However, three-point bending stress of the ceramic coating after the sealing treatment is decreased. This is attributed to the reduced micro-crack toughening effect since the cracks propagate easily through the lamellar of the coating without crack deflection and/or branching after the sealing treatment.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1081-1084
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• 2003

Structural morphology, annealing behavior and dielectric properties of polyaniline-emeraldine base (Pani-EB) and poly methyl methacrylate (PMMA) thin films prepared by spin coating technique have been studied. MIM and MISM structures were used to investigate annealing and dielectric behavior. The XRD and AFM spectrum of as grown and annealed thin films indicates the amorphous nature. The observed amorphous phase, low loss, dielectric behavior and thermal stability even at high temperatures implies the feasibility of utilizing PMMA and Pani-EB thin films as gate dielectric insulator layer in organic thin film transistors which can find application in flat panel display.

• Applied Microscopy
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• 제46권3호
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• pp.155-159
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• 2016

This paper analyses the relationship between the distribution of a dielectric layer on the apex of a metal field electron emitter and the distribution of electron emission. Emitters were prepared by coating a tungsten emitter with a layer of epoxylite resin. A high-resolution scanning electron microscope was used to monitor the emitter profile and measure the coating thickness. Field electron microscope studies of the emission current distribution from these composite emitters (Tungsten-Clark Electromedical Instruments Epoxylite resin [Tungsten/CEI-resin emitter]) have been carried out. Two forms of image have been observed: bright single-spot images, thought to be associated with a smooth substrate and a uniform dielectric layer; and multi-spot images, though to be associated with irregularity in the substrate or the dielectric layer.