• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.182-187
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• 2011

In this paper, PBTI characteristics of NMOSFETs with La incorporated HfSiON and HfON are compared in detail. The charge trapping model shows that threshold voltage shift (${\Delta}V_{\mathrm{T}}$) of NMOSFETs with HfLaON is greater than that of HfLaSiON. PBTI lifetime of HfLaSiON is also greater than that of HfLaON by about 2~3 orders of magnitude. Therefore, high charge trapping rate of HfLaON can be explained by higher trap density than HfLaSiON. The different de-trapping behavior under recovery stress can be explained by the stable energy for U-trap model, which is related to trap energy level at zero electric field in high-k dielectric. The trap energy level of two devices at zero electric field, which is extracted using Frenkel-poole emission model, is 1,658 eV for HfLaSiON and 1,730 eV for HfLaON, respectively. Moreover, the optical phonon energy of HfLaON extracted from the thermally activated gate current is greater than that of HfLaSiON.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.258-262
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• 2000

$YMnO_3$thin films are deposited on Si(100) and $Y_2O_3/Si(100)$ substrate by radio frequency sputtering. The deposition condition of oxygen partial pressure and annealing temperature have significant influences on the preferred orientation of $YMnO_3$film and the size of memory window. The results of x-ray diffraction show that the film deposited in the oxygen partial pressure of 0% is highly oriented along c-axis after annealing at $870^{\circ}C$ for 1 hr in oxygen ambient. However, the films deposited on Si and $Y_2O_3/Si$ in the oxygen partial pressures of 20% show $Y_2O_3$ peak, the excess $Y_2O_3$ in the $YMnO_3$film suppresses the c-axis oriented crystallization. Especially memory windows of the $Pt/YMnO_3/Y_2O_3/Si$ capacitor are 0.67~3.65 V at applied voltage of 2~12 V, which is 3 times higher than that of the film deposited on $Y_2O_3/Si$ in 20% oxygen (0.19~1.21 V) at the same gate voltage because the film deposited in 0% oxygen is well crystallized along c-axis.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.2
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• pp.147-153
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• 2016

The lightning protection of information and communication facilities is very important factor to improve a reliability of the action of these equipment. Especially the transient potential rise of ground electrode being injected with the lightning current is to be a basic data of the dielectric strength for both power and communication facilities so that more accurate analysis should be required. The transient potential rise can be calculated from the ground impedance and the ground impedance is strongly dependent upon the shape of the ground electrode and the frequency-dependence of soil. The Debye's equation which is able to calculate the characteristics of dielectrics is used to analyze the frequency-dependent of soil. Also, the method to calculate the transient potential rise from the ground impedance is specified in this paper. In order to analyze the transient potential rise resulting from calculations with Debye's equation, TLM(transmission line method) and case of ${\rho}$(resistivity)-constant are simulated, respectively. The length of a horizontal ground electrode is 30 m and simulations were performed at 10, 100, $1000{\Omega}{\cdot}m$ with the standard lightning current waveform. In result, the transient potential rise of horizontal ground electrode calculating with Debye's equation is lower than it of other models.

• Korean Journal of Remote Sensing
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• v.26 no.5
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• pp.497-510
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• 2010

In this study, comparisons of the backscattering coefficients and the coherence values which had been extracted from SAR (Synthetic Aperture Radar) images such as JERS-1, ENVISAT and ALOS satellites with surface roughness, surface geometric and soil moisture content were carried out. As the results of analysis using the backscattering coefficient and coherence values from SAR images, the coherence was shown high in the region containing more of mud fraction due to higher viscosity of fine grain-size. A lot of tidal channels were well developed in the Ganghwa tidal flat, affecting the drainage of seawater and subsequent soil moisture content by exposure time of tidal flat. The backscattering coefficient. consequently, appeared to be lower in sand flat and mix flat with decrease of soil moisture. In contrast, most mud flats were distributed at high elevation so that soil moisture was not much influenced by seawater. The backscattering coefficient in mud flat seemed to have a relationship with the density of tidal channel. In addition, lowering backscattering coefficients in the all Ganghwa tidal flat was observed when surface remnant water increased according to the amount of rainfall. The correlation between backscattering coefficient, coherence and sediment environment factors in the Ganghwa tidal flat was investigated. In the future, more quantitative spatial analysis will be helpful to well understand the sedimentary influence of various sediment environment factors.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.10
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• pp.1240-1247
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• 2019

In this paper, we designed a four-band antenna that can be applied to WLAN and WiMAX systems by designing a microstrip feeding structure, four branch lines and a slit on the ground plane. The proposed antenna is designed with a size of 16.0 mm (W1) × 48.0 mm (L8) on a dielectric substrate of 18.0 mm (W) × 50.0 mm (L) × 1.0 mm(h). and a slit of 2.9 mm (W7) × 4.0 mm (L7) is inserted into the ground plane of 18.0 mm (W) × 18.7 mm (L6). Based on -10 dB production and measurement results, it obtained 60.8 MHz (8,730~9,338 MHz), 310 MHz (2.33~2.64 GHz) in the 2.4 GHz band, 420MHz (3.39~3.81 GHz) in the 3.4 GHz band, and 2,070 MHz (4.62~6.69 GHz) in the 5.0 GHz. In addition, the gain and radiation pattern characteristics of the quadrant band are measured from the measurement results anechoic chamber.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.97-105
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• 2020

Recently, as the data speed and operating frequencies of Ethernet keeps increasing, electro magnetic interference (EMI) also becomes increasing. The generation of such EMI will cause malfunction of near electronic devices. In this study, EMI filters were applied to reduce the EMI generated by DC-DC SMPS (switching mode power supply), which is the main cause of EMI generation of Ethernet switch. As the EMI filter, MLCCs with excellent withstanding voltage characteristics were used, which had advantages in miniaturization and mass production. Two types of EMI MLCC filters were used, which are X-capacitor and X, Y-capacitor. X-capacitor was composed of 2 MLCCs with 10 nF and 100 nF capacity and 1 Mylar capacitor. Y-capacitor was consisted of 6 MLCCs with a capacity of 27 nF. When only X-capacitor was applied as EMI filter, the conductive EMI field strength exceeded the allowable limit in frequency range of 150 kHz ~ 30 MHz. The radiative EMI also showed high EMI strength and very small allowable margin at the specific frequencies. When the X and Y-capacitors were applied, the conductive EMI was greatly reduced, and the radiation EMI was also found to have sufficient margin. In addition, X, Y-capacitors showed very high insulation resistance and withstanding resistance performances. In conclusion, EMI X, Y-capacitors using MLCCs reduced the EMI noise effectively and showed excellent electrical reliability.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.1
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• pp.13-22
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• 2022

In this paper, we propose single and array antenna with dual linear polarization characteristics for 28 GHz band. The proposed antenna is designed two microstirp feeding structure and Taconic TLY-5 substrate, which is thickness 0.5 mm, and the dielectric constant is 2.2. The size of single patch antenna is 3.4 mm×3.4 mm, and total size of single antenna is 15.11 mm×15.11 mm. Also, the size of array antenna is 3.15 mm×3.15 mm, and total size of array antenna is 21.5 mm×13.97 mm. From the fabrication and measurement results, for 1×2 array antenna, in case of vertical polarization, cross polarization ratios are obtained from 14.23 dB to 20.79 dB and in case of horizontal polarization, cross polarization ratios are obtained from 14.31 dB to 22.74 dB for input port 1. in case of vertical polarization, cross polarization ratios are obtained from 15.75 dB to 25.88 dB and in case of horizontal polarization, cross polarization ratios are obtained from 14.70 dB to 22.82 dB for input port 2.

• Journal of the Korea Society of Computer and Information
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• v.27 no.3
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• pp.71-77
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• 2022

In this paper, we propose 1×2 array antenna with dual linear polarization characteristics for mmWave band operation. The proposed antenna is designed two microstirp feeding structure and FR-4 substrate, which is thickness 0.4 mm, and the dielectric constant is 4.3. The size of 1×2 array antenna is 2.33 mm×2.33 mm, and total size of array antenna is 13.0 mm×6.90 mm. From the fabrication and measurement results, bandwidths of 1.13 GHz (28.52~29.65 GHz) for port 1 and 1.08 GHz (28.45~29.53 GHz) for port 2 were obtained based on the impedance bandwidth. Cross polarization ratios are obtained from 7.68 dBi to 16.90 dBi in case of vertical polarization, and from 7.46 dBi to 15.97 dBi in case of horizontal polarization for input port 1, respectively. Also, cross polarization ratios are obtained from 8.59 dBi to 13.72 dBi in case of vertical polarization and from 9.03 dB to 14.0 dB in case of horizontal polarization for input port 2, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.8-16
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• 2023

The importance of next-generation packaging technologies is being emphasized as a solution as the miniaturization of devices reaches its limits. To address the bottleneck issue, there is an increasing need for 2.5D and 3D interconnect pitches. This aims to minimize signal delays while meeting requirements such as small size, low power consumption, and a high number of I/Os. Hybrid bonding technology is gaining attention as an alternative to conventional solder bumps due to their limitations such as miniaturization constraints and reliability issues in high-temperature processes. Recently, there has been active research conducted on SiCN to address and enhance the limitations of the Cu/SiO₂ structure. This paper introduces the advantages of Cu/SiCN over the Cu/SiO₂ structure, taking into account various deposition conditions including precursor, deposition temperature, and substrate temperature. Additionally, it provides insights into the core mechanisms of SiCN, such as the role of Dangling bonds and OH groups, and the effects of plasma surface treatment, which explain the differences from SiO₂. Through this discussion, we aim to ultimately present the achievable advantages of applying the Cu/SiCN hybrid bonding structure.

• Journal of Advanced Technology Convergence
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• v.3 no.3
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• pp.9-15
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• 2024

This paper details research on the optimized design and fabrication of a 4x4 microstrip array antenna intended for X-Band applications. The study focuses on achieving the desired resonance frequency and gain by modifying the microstrip patch and array antenna parameters, including substrate type and patch size. It presents results from designing and fabricating a 4x4 array antenna with optimum substrate materials to enhance X-Band resonance characteristics and gain. The antenna dimensions are 10mm(W)x7.4mm(L)x 0.79mm(H), with an Rogers RO 4350B dielectric substrate (ε_r=3.54) and an inset-fed feeding method to minimize antenna size. Both the single patch and 4x4 array antennas demonstrated stable SWR (<1.5) and a gain of 18.5dBi at the target frequency of 10.3GHz in simulations. The fabricated antenna showed performance consistent with simulation results. This antenna design is suitable for X-Band applications, including military, satellite communications, and biomedical fields.