Journal of the Microelectronics and Packaging Society (마이크로전자및패키징학회지)

The Korean Microelectronics and Packaging Society (한국마이크로전자및패키징학회)
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A Review on the Bonding Characteristics of SiCN for Low-temperature Cu Hybrid Bonding

저온 Cu 하이브리드 본딩을 위한 SiCN의 본딩 특성 리뷰

  • Yeonju Kim (Department of Semiconductor Engineering, Seoul National University of Science and Technology) ;
  • Sang Woo Park (Department of Semiconductor Engineering, Seoul National University of Science and Technology) ;
  • Min Seong Jung (Department of Semiconductor Engineering, Seoul National University of Science and Technology) ;
  • Ji Hun Kim (Department of Semiconductor Engineering, Seoul National University of Science and Technology) ;
  • Jong Kyung Park (Department of Semiconductor Engineering, Seoul National University of Science and Technology)
  • 김연주 (서울과학기술대학교 지능형반도체공학과) ;
  • 박상우 (서울과학기술대학교 지능형반도체공학과) ;
  • 정민성 (서울과학기술대학교 지능형반도체공학과) ;
  • 김지훈 (서울과학기술대학교 지능형반도체공학과) ;
  • 박종경 (서울과학기술대학교 지능형반도체공학과)
  • Received : 2023.12.15
  • Accepted : 2023.12.30
  • Published : 2023.12.30
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Abstract

The importance of next-generation packaging technologies is being emphasized as a solution as the miniaturization of devices reaches its limits. To address the bottleneck issue, there is an increasing need for 2.5D and 3D interconnect pitches. This aims to minimize signal delays while meeting requirements such as small size, low power consumption, and a high number of I/Os. Hybrid bonding technology is gaining attention as an alternative to conventional solder bumps due to their limitations such as miniaturization constraints and reliability issues in high-temperature processes. Recently, there has been active research conducted on SiCN to address and enhance the limitations of the Cu/SiO2 structure. This paper introduces the advantages of Cu/SiCN over the Cu/SiO2 structure, taking into account various deposition conditions including precursor, deposition temperature, and substrate temperature. Additionally, it provides insights into the core mechanisms of SiCN, such as the role of Dangling bonds and OH groups, and the effects of plasma surface treatment, which explain the differences from SiO2. Through this discussion, we aim to ultimately present the achievable advantages of applying the Cu/SiCN hybrid bonding structure.

디바이스 소형화의 한계에 다다르면서, 이를 극복할 수 있는 방안으로 차세대 패키징 기술의 중요성이 부각되고 있다. 병목 현상을 해결하기 위해 2.5D 및 3D 인터커넥트 피치의 필요성이 커지고 있는데, 이는 신호 지연을 최소화 할 수 있도록 크기가 작고, 전력 소모가 적으며, 많은 I/O를 가져야 하는 등의 요구 사항을 충족해야 한다. 기존 솔더 범프의 경우 미세화 한계와 고온 공정에서 녹는 등의 신뢰성 문제가 있어, 하이브리드 본딩 기술이 대안책으로 주목받고 있으며 최근 Cu/SiO2 구조의 문제점을 개선하고자 SiCN에 대한 연구 또한 활발히 진행되고 있다. 해당 논문에서는 Cu/SiO2 구조 대비 Cu/SiCN이 가지는 이점을 전구체, 증착 온도 및 기판 온도, 증착 방식, 그리고 사용 가스 등 다양한 증착 조건에 따른 SiCN 필름의 특성 변화 관점에서 소개한다. 또한, SiCN-SiCN 본딩의 핵심 메커니즘인 Dangling bond와 OH 그룹의 작용, 그리고 플라즈마 표면 처리 효과에 대해 설명함으로써 SiO2와의 차이점에 대해 기술한다. 이를 통해, 궁극적으로 Cu/SiCN 하이브리드 본딩 구조 적용 시 얻을 수 있는 이점에 대해 제시하고자 한다.

Keywords

Acknowledgement

This research was supported by the National R&D Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (2022M3I7A4072293).

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