• 전자공학회논문지
• /
• 제50권1호
• /
• pp.131-136
• /
• 2013

칩 적층기술의 발달로 TSV(Through Silicon Via) 기반 3D IC가 개발되었다. 3D IC의 높은 신뢰성과 수율을 얻기 위해서는 pre-bond 와 post-bond 수준에서 다양한 TSV 테스트가 필수적이다. 본 논문에서는 pre-bond 다이의 TSV 연결부에서 발생하는 미세한 고장과 post-bond 적층된 3D IC의 TSV 연결선에서 발생하는 다양한 고장을 테스트할 수 있는 설계기술을 소개한다. IEEE 1500 표준 기반의 래퍼셀을 보완하여 TSV 기반 3D IC pre-bond 및 post-bond의 at speed test를 통하여 known-good-die와 무결점의 3D IC를 제작하고자 한다.

• 반도체디스플레이기술학회지
• /
• 제20권4호
• /
• pp.171-176
• /
• 2021

Die-to-wafer (D2W) hybrid bonding in the multilayer semiconductor manufacturing process is one of wafer direct bonding, and various studies are being conducted around the world. A noteworthy point in the current die-to-wafer process is that a lot of voids occur on the bonding surface of the die during bonding. In this study, as a suggested method for removing voids generated during the D2W hybrid bonding process, a flexible mechanism for implementing convex for die bonding to be applied to the bond head is proposed. In addition, modeling of flexible mechanisms, analysis/design/control/evaluation of static/dynamics properties are performed. The proposed system was controlled by capacitive sensor (lion precision, CPL 290), piezo actuator (P-888,91), and dSpace. This flexure mechanism implemented a working range of 200 ㎛, resolution(3σ) of 7.276nm, Inposition(3σ) of 3.503nm, settling time(2%) of 500.133ms by applying a reverse bridge type mechanism and leaf spring guide, and at the same time realized a maximum step difference of 6 ㎛ between die edge and center. The results of this study are applied to the D2W hybrid bonding process and are expected to bring about an effect of increasing semiconductor yield through void removal. In addition, it is expected that it can be utilized as a system that meets the convex variable amount required for each device by adjusting the elongation amount of the piezo actuator coupled to the flexible mechanism in a precise unit.

• 대한치과보철학회지
• /
• 제32권2호
• /
• pp.212-224
• /
• 1994

The purpose of this study was to evaluate and compare film thickness of five kinds of resin luting cements [Comspan, Panavia Ex, Maryland bridge adhesive, All-bond C & B cementation kit, and Super-bond C & B]. Zinc-phosphate cement and glass-ionomer cement were used as the control group. In order to measure the film thickness the methods used were in broad compliance with ADA Specification No. 8, a tapered-die system that simulates clinical conditions more closely, and the connected tapered-die system that simulates bridge conditions. The inorganic filler size of resin cements was also examined with scanning electron micrographs. The results were obtained as follows ; 1. The film thickness of resin cements was increased in the order of Comspan, Panavia Ex, Super-bond C & B, Maryland bridge adhesive, and All-bond C & B cementation kit. Maryland bridge adhesive and All-bond C & B cementation kit showed significantly higher film thickness than the control group(p<0.01). 2. For all resin cements, there was a significant difference of film thickness between the ADA method and the tapered-die system. Generally, the tapered-die system demonstrated lower film thickness than the ADA method(p<0.01). 3. There was no significant difference in film thickness between the tapered-die system and the tapered-die bridge system in all resin cements(p<0.01). 4. The scanning electron microscope showed that the cement with larger filler had a tendency to be higher in film thickness.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.390-391
• /
• 2007

LED Packaging 과정 중 Die bond 재료로 Silver epoxy를 사용하여 Packaging 한 후 T3Ster 장비로 열 저항 값(Rth)을 측정하였다. Silver epoxy 의 접착 두께를 조절하여 열 저항 값을 측정하였고, 열전도도 값이 다른 Silver epoxy를 사용하여 열 저항 값을 측정하였다. Silver epoxy 접착 두께가 충분하여 Chip 전면에 고루 분포되었을 경우 그렇지 않은 경우보다 평균 4.8K/W 낮은 13.23K/W의 열 저항 값을 나타내었고, 열전도도가 높은 Silver epoxy 일수록 열전도도가 낮은 재료보다 평균 4.1K/W 낮은 12K/W의 열 저항 값을 나타내었다.

• 마이크로전자및패키징학회지
• /
• 제7권1호
• /
• pp.61-73
• /
• 2000

In traditional electronic packages the die and the substrate are interconnected with fine wire. Wire bonding technology is limited to bond pads around the peripheral of the die. As the demand for I/O increases, there will be limitations with wire bonding technology.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
• /
• pp.43-55
• /
• 2000

In traditional electronic packages the die and the substrate are interconnected with fine wire. Wire bonding technology is limited to bond pads around the peripheral of the die. As the demand for I/O increases, there will be limitations with wire bonding technology. Flip chip technology eliminates the need for wire bonding by redistributing the bond pads over the entire surface of the die. Instead of wires, the die is attached to the substrate utilizing a direct solder connection. Although several steps and processes are eliminated when utilizing flip chip technology, there are several new problems that must be overcome. The main issue is the mismatch in the coefficient of thermal expansion (CTE) of the silicon die and the substrate. This mismatch will cause premature solder Joint failure. This issue can be compensated for by the use of an underfill material between the die and the substrate. Underfill helps to extend the working life of the device by providing environmental protection and structural integrity. Flux residues may interfere with the flow of underfill encapsulants causing gross solder voids and premature failure of the solder connection. Furthermore, flux residues may chemically react with the underfill polymer causing a change in its mechanical and thermal properties. As flip chip packages decrease in size, cleaning becomes more challenging. While package size continues to decrease, the total number of 1/0 continue to increase. As the I/O increases, the array density of the package increases and as the array density increases, the pitch decreases. If the pitch is decreasing, the standoff is also decreasing. This paper will present the keys to successful flip chip cleaning processes. Process parameters such as time, temperature, solvency, and impingement energy required for successful cleaning will be addressed. Flip chip packages will be cleaned and subjected to JEDEC level 3 testing, followed by accelerated stress testing. The devices will then be analyzed using acoustic microscopy and the results and conclusions reported.

• 한국소성가공학회:학술대회논문집
• /
• 한국소성가공학회 2002년도 금형가공 심포지엄
• /
• pp.136-143
• /
• 2002

Warm draw die technique which is one of the new forming technologies to improve formability of sheet metal is applied to the cylindrical and square cup drawing of stainless-aluminum clad sheets. In experiments the temperature of die and blank holder is varied from room temperature to $180^{\circ}C$, while the punch is cooled by circulation of coolant to increase the fracture strength of workpiece on the punch comer area. Test materials chosen for experiments are STS304-A1050-STS304 clad sheets. Teflon film as a lubricant is used on both sides of a workpiece. The limit drawing ratio and relative drawing depth as well as quality of drawn cups(distribution of thickness)are investigated and validity of warm drawing process is also discussed. No separation between each laminated material after drawing occurred through inspection by microscope as well as application of penetrant remover and bond strength test. Therefore, warm forming technique was confirmed to give better results in deep drawing of stainless clad sheet metal.

• Design & Manufacturing
• /
• 제2권4호
• /
• pp.44-47
• /
• 2008

The magnetic polishing is the useful method to finish some machinery fabrications by using magnetic power. This method is one of the precision techniques and has an aim for clean technology in the transportation of the pure gas in the clean pipes. The magnetic abrasive polishing method is not so common in the field of machine that it is not known to widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper we deals with the development of the magnetic abrasive with the use of Sr-Ferrite. In this development, abrasive grain A has been made by using the resin bond fabricated at low temperature. And magnetic abrasive powder was fabricated from the Sr-Ferrite which was crushed into 200 mesh. The XRD analysis result shows that only A abrasive and Sr-Ferrite crystal peaks were detected, explaining that resin bond was not any more to contribute chemical reaction. From SEM analysis, we found that A abrasive and Sr-Ferrite were strongly bonding with each other.

• 마이크로전자및패키징학회지
• /
• 제27권1호
• /
• pp.1-7
• /
• 2020

The backside metallization process is typically used to attach a chip to a lead frame for semiconductor packaging because it has excellent bond-line and good electrical and thermal conduction. In particular, the backside metal with the Ag/Sn/Ag sandwich structure has a low-temperature bonding process and high remelting temperature because the interfacial structure composed of intermetallic compounds with higher melting temperatures than pure metal layers after die attach process. Here, we introduce a die attach process with the Ag/Sn/Ag sandwich structure to apply commercial semiconductor packages. After the die attachment, we investigated the evolution of the interfacial structures and evaluated the shear strength of the Ag/Sn/Ag sandwich structure and compared to those of a commercial backside metal (Au-12Ge).

• 기술사
• /
• 제30권6호
• /
• pp.144-152
• /
• 1997

Development of diamond wheel with fine grains and multi-pore structures were newely attempted to be studied in this paper. Wheels, that are employed for the smooth and mirrow finishing of die materials such as tungsten carbide alloy using tool and die materials, must have both performances to remove tool marks efficiently and to contact elastically with curved surfaces. Diamond abrasive grains were bonded firmly by a melamine to prevent the decrease of machining efficiency due to grain sinking within the bond materials. Also, highly foamed structures were developed to increase the flexibility of the wheel, and to induce active self-sharpening by increasing contact pressure between the wheel and work sufaces. In this paper, melamine-bonded diamond wheels are trial manufactured, then the forming method of wheels are explained.