• Title/Summary/Keyword: Diamond powder

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Characteristics of Pre-alloyed Powders for Diamond Tools

  • Luo, Xi-Yu;Ma, Hong-Qiu;Kuang, Xing;Huang, Man;Tang, Ming-Qiang
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.1144-1145
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    • 2006
  • In this paper, the fundamental attributes, phase composition of three pre-alloyed powders for diamond tools by water atomization were investigated. The density, hardness, bend strength and bending modulus of their hot pressing samples were examined. The results showed that the three pre-alloyed powders have excellent low temperature sintering characteristics. The physical and mechanical properties of the samples were found to be nearly the same as those of fine cobalt powders.

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Comparison of Micro Trench Machining Characteristics with Nonferrous Metal and Polymer using Single Diamond Cutting Tool (단결정 다이아몬드 공구에 의한 비철금속과 폴리머 소재의 마이크로 트렌치 가공특성 비교)

  • Choi, Hwan-Jin;Jeon, Eun-Chae;Choi, Doo-Sun;Je, Tae-Jin;Kang, Myung-Chang
    • Journal of Powder Materials
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    • v.20 no.5
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    • pp.355-358
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    • 2013
  • Micro trench structures are applied in gratings, security films, wave guides, and micro fluidics. These micro trench structures have commonly been fabricated by micro electro mechanical system (MEMS) process. However, if the micro trench structures are machined using a diamond tool on large area plate, the resulting process is the most effective manufacturing method for products with high quality surfaces and outstanding optical characteristics. A nonferrous metal has been used as a workpiece; recently, and hybrid materials, including polymer materials, have been applied to mold for display fields. Thus, the machining characteristics of polymer materials should be analyzed. In this study, machining characteristics were compared between nonferrous metals and polymer materials using single crystal diamond (SCD) tools; the use of such materials is increasing in machining applications. The experiment was conducted using a square type diamond tool and a shaper machine tool with cutting depths of 2, 4, 6 and 10 ${\mu}m$ and a cutting speed of 200 mm/s. The machined surfaces, chip, and cutting force were compared through the experiment.

The Synthesis of Diamond Thin Films by MPECVD Using Organic Compounds (유기 화합물을 이용한 MPECVD에 의한 다이아몬드 박막 합성)

  • Ku, Ja-Chun;Oh, Jeong-Seob;Whang, Ki-Woong
    • Proceedings of the KIEE Conference
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    • 1990.11a
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    • pp.97-100
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    • 1990
  • Diamond thin films were synthesized by the MPECVD (Microwave Enhanced Chemical Deposition) using the mixture of the hydrogen and organic compounds($CH_3COCH_3$, $CH_3OH$). In X-ray Diffraction, the d values of all the deposits on the Si substrates with the experimental conditions coincide with those of natural diamond in POD (Powder Diffraction Data). The changes of the morphology of all the deposits were examined by SEM. The amount of amorphous carbon or graphite in the diamond films were increased as the acetone concentration was increased. The morphology of the diamond particles can be changed from ball-like to euhedral by adding the small amount of the methanol in the reaction gases of the high acetone concentration.

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A Study on the Effect of Si Surface on Diamond Film Growth by AES (Diamond 박막 성장에 미치는 Si 표면 영향의 AES에 의한 연구)

  • Lee, Cheol-Ro;Sin, Yong-Hyeon;Im, Jae-Yeong;Jeong, Gwang-Hwa;Cheon, Byeong-Seon
    • Journal of the Korean Vacuum Society
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    • v.2 no.2
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    • pp.199-208
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    • 1993
  • The effect of nucleation free energy related to Si surface states on diamond film growth behavior has been studied. Ar first, the three kinds of diamond thin films (A, B, C) were deposited on various Si substrates (A-Si, B-Si, C-Si) whose surfaces were polished with 1 ${\mu}m$ diamond paste, 6 ${\mu}m$ Al_2O_3$ powder and 12 ${\mu}m$ Al_2O_3$ powder respectively. And then, relative nucleation free energy calculated is ${\Delta}G_{A-Si}<{\Delta}G_{B-Si}<{\Delta}G_{C-Si}$. Although there are some difference in grain size, shape and nucleated size, the thin films on A-Si and B-Si were diamond including a small amount of DLC which was confirmed by AES, SEM, XRD, and RHEED. Namely, the diamonds of films (B) were not nucleated in scratches but in dents and larger in grain size compare with the film (C) of which diamond sere nucleated not only scratches but also dents. And, the sphere diamond which is not general shape was grown on C-Si. After all, the sphere was turned out to be the diamond including much graphite as a result of the AES in situ depth profiling. Consequently, the diamond shape and quality grown on Si were Changed from the crystal which the (100) and (110) planes were predominent to the crystal in which (111) plane was predominent, and newt to sphere shape diamond including much graphite according as the nucleation free energy increases.

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Growth of Nanocrystalline Diamond Films on Poly Silicon (폴리 실리콘 위에서 나노결정질 다이아몬드 박막 성장)

  • Kim, Sun Tae;Kang, Chan Hyoung
    • Journal of Surface Science and Engineering
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    • v.50 no.5
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    • pp.352-359
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    • 2017
  • The growth of nanocrystalline diamond films on a p-type poly silicon substrate was studied using microwave plasma chemical vapor deposition method. A 6 mm thick poly silicon plate was mirror polished and scratched in an ultrasonic bath containing slurries made of 30 cc ethanol and 1 gram of diamond powders having different sizes between 5 and 200 nm. Upon diamond deposition, the specimen scratched in a slurry with the smallest size of diamond powder exhibited the highest diamond particle density and, in turn, fastest diamond film growth rate. Diamond deposition was carried out applying different DC bias voltages (0, -50, -100, -150, -200 V) to the substrate. In the early stage of diamond deposition up to 2 h, the effect of voltage bias was not prominent probably because the diamond nucleation was retarded by ion bombardment onto the substrate. After 4 h of deposition, the film growth rate increased with the modest bias of -100 V and -150 V. With a bigger bias condition(-200 V), the growth rate decreased possibly due to the excessive ion bombardment on the substrate. The film grown under -150V bias exhibited the lowest contact angle and the highest surface roughness, which implied the most hydrophilic surface among the prepared samples. The film growth rate increased with the apparent activation energy of 21.04 kJ/mol as the deposition temperature increased in the range of $300{\sim}600^{\circ}C$.

XPS Characterization and Morphology of MgO Thin Films grown on Single-Crystalline Diamond (100)

  • Lee, S.M.;Ito, T.;Murakami, H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.19-27
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    • 2003
  • Morphology and composition of MgO films grown on single-crystalline diamond (100) have been studied. MgO thin films were deposited in the substrate temperature range from room temperature (RT) to 723K by means of electron beam evaporation using MgO powder source. Atomic force microscopy images indicated that the film grown at RT without $O_2$ supply was relatively uniform and flat whereas that deposited in oxygen ambient yielded higher growth rates and rough surface morphologies. X-ray photoelectron spectroscopy analyses demonstrate that the MgO film deposited at RT without $O_2$ has the closest composition to the stoichiometric MgO, and that a thin contaminant layer composed mainly of magnesium peroxide (before etching) or hydroxide (after etching) was unintentionally formed on the film surface, respectively. These results will be discussed in relation to the interaction among the evaporated species and intentionally supplied oxygen molecules at the growth front as well as the interfacial energy between diamond and MgO.

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Deposition of diamond thin film by MPECVD method (마이크로웨이브 화학 기상 증착법을 이용한 다이아몬드 박막의 증착)

  • Sung Hoon Kim;Young Soo Park;Jo-Won Lee
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.1
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    • pp.92-99
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    • 1994
  • Diamond thin film was deposited on n type (100) Si substrate by MPECVD(Microwave plasma Enhanced Chemical Vapor Deposition). For the increase in nucleation density of diamond, Si substrate was pretreated by diamond powder or negative bias voltage was applied to the substrate during the initial deposition. In the case of retreated Si substrate, the diamond thin film quality was enhanced with increasing the total pressure in the range of 20~150 Torr. For the negative bias voltage, the formation condition of the diamond was seriously affected by $CH_4$ concentration and total pressure. The formation condition will be discussed with electrical current of substrate generated by plasma ions which depend on $CH_4$concentration, bias voltage, and total pressure.

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Machining Characteristics of Micro Structure using Single-Crystal Diamond Tool on Cu-plated Mold (단결정 다이아몬드공구를 사용한 Cu 도금된 몰드의 미세 구조체 가공특성)

  • Kim, Chang-Eui;Jeon, Eun-chae;Je, Tae-Jin;Kang, Myung Chang
    • Journal of Powder Materials
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    • v.22 no.3
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    • pp.169-174
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    • 2015
  • The optical film for light luminance improvement of BLU that is used in LCD/LED and retro-reflective film is used as luminous sign consist of square and triangular pyramid structure pattern based on V-shape micro prism pattern. In this study, we analyzed machining characteristics of Cu-plated flat mold by shaping with diamond tool. First, cutting conditions were optimizing as V-groove machining for the experiment of micro prism structure mold machining with prism pattern shape, cutting force and roughness. Second, the micro prism structure such as square and triangular pyramid pattern were machined by cross machining method with optimizing cutting conditions. Burr and chip shape were discussed with material properties and machining method.

Effect of Phase Transformation and Grain-size Variation on the Dry Sliding Wear of Hot-pressed Cobalt

  • Kim, Yong-Suk;Lee, Jong-Eun;Kang, Suk-Ha;Kim, Tai-Woong
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.879-880
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    • 2006
  • Effect of phase transformation and grain-size variation of hot-pressed cobalt on its dry sliding wear was investigated. The sliding wear test was carried out against glass (83% $SiO_2$) beads at 100N load using a pin-on-disk wear tester. Worn surfaces, cross sections, and wear debris were examined by an SEM. Phases of the specimen and wear debris were identified by an XRD. Thermal transformation of the cobalt from the hcp $\varepsilon$ phase to the $\gamma$ (fcc) phase during the wear was detected, which was deduced as the wear mechanism of the sintered cobalt.

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