• Title/Summary/Keyword: Diamond CVD

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Synthesis of diamond thin films from $H_2-CH_4$ gas mixture by rf PACVD (고주파 플라즈마 CVD에 의한 $H_2-CH_4$ 계로부터 다이아몬드 박막의 합성)

  • Lee, Sang-Hee;Klm, Dae-Il;Park, Sang-Hyun;Kim, Bo-Youl;Lee, Jong-Tae;Woo, Ho-Whan;Han, Sang-Ok;Lee, Duck-Chool
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1514-1515
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    • 1998

  • Diamond thin films were deposited on n-type (100) Si wafers from $H_2-CH_4$ gas mixture by rf PACVD. Prior to deposition, mechanical scratching was done to improve density of nucleation sites with diamond paste of 3${\mu}m$. The microstructure of deposited diamond thin films was studied by using the following conditions : discharge power of 500W, $H_2$ flow rate of 50sccm, reaction pressure of 20torr, and $CH_4/H_2$ ratio of 0.3$\sim$1%. The deposited diamond thin films showed that the crystallite was increased at the lower methane concentration. The deposited thin films were characterized by Scanning Electron Microscopy. Raman Spectroscopy and Fourier-Transform Infrared Spectroscopy.

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The influence of crystalline direction of substrate and depostion conditions on the orientation of diamond films (기판의 결정 방향 및 증착 변수가 다이아몬드 박막의 배향성에 미치는 영향)

  • Lee, Tae-Hoon;Seo, Soo-Hyung;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1542-1545
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    • 2002

  • Experimental works were performed to implement the hetero-epitaxial growth of diamond films on the (100)- and (111)-oriented Si substrates. The deposition process used to prepare diamond films consisted of a bias-enhanced nucleation(BEN) step, accompanied with a growth step using a microwave plasma CVD system. The highly oriented diamond films were deposited under the growth condition of relatively low methane concentrations and high temperatures. Material properties and surface morphologies of deposited diamond films were improved by the addition of carburization step into the deposition process.

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The Study on Growls of diamond thin films Synthesized by Microwave Plasma Enhanced Chemical Vapor Deposition (Microwave Plasma CVD에 의한 Diamond 박막의 성장)

  • 이병수;이상희;박구범;박종관;박상현;유도현;이덕출
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.373-376
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    • 1997

  • Diamond thin films were deposited on P-type(100) Si wafers using MPECVD. Prior to deposition, mechanical scretching was done to improve density of nucleation sites with diamond paste of 0.25${\mu}{\textrm}{m}$ size. Diamond films were deposited under the following conditions : methane concentration of 0.5~5%, oxygen concentration of 0~70%, process pressure of 70Torr, process temperature of 900~95$0^{\circ}C$, and deposition time 5hrs. The changes of the morphology and the growth rates of the deposits with the experimental conditions are expriend by Scanning Electron Microscopy. Raman Spectroscopy and X-ray Diffraction method.

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