• Title/Summary/Keyword: Device to Device (D2D)

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Terra-Scope - a MEMS-based vertical seismic array

  • Glaser, Steven D.;Chen, Min;Oberheim, Thomas E.
    • Smart Structures and Systems
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    • v.2 no.2
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    • pp.115-126
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    • 2006
  • The Terra-Scope system is an affordable 4-D down-hole seismic monitoring system based on independent, microprocessor-controlled sensor Pods. The Pods are nominally 50 mm in diameter, and about 120 mm long. They are expected to cost approximately $6000 each. An internal 16-bit, extremely low power MCU controls all aspects of instrumentation, eight programmable gain amplifiers, and local signal storage. Each Pod measures 3-D acceleration, tilt, azimuth, temperature, and other parametric variables such as pore water pressure and pH. Each Pod communicates over a standard digital bus (RS-485) through a completely web-based GUI interface, and has a power consumption of less than 400 mW. Three-dimensional acceleration is measured by pure digital force-balance MEMS-based accelerometers. These accelerometers have a dynamic range of more than 115 dB and a frequency response from DC to 1000 Hz with a noise floor of less than $30ng_{rms}/{\surd}Hz$. Accelerations above 0.2 g are measured by a second set of MEMS-based accelerometers, giving a full 160 dB dynamic range. This paper describes the system design and the cooperative shared-time scheduler implemented for this project. Restraints accounted for include multiple data streams, integration of multiple free agents, interaction with the asynchronous world, and hardened time stamping of accelerometer data. The prototype of the device is currently undergoing evaluation. The first array will be installed in the spring of 2006.

Design and Fabrication of InP/InGaAs PIN Photodiode for Horizontally Integrated OEIC's (수평집적형 광전자집적회로를 위한 InP/InGaAs PIN 광다이오드의 설계 및 제작)

  • 여주천;김성준
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.4
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    • pp.38-48
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    • 1992
  • OEIC(Optoelectronic Integrated Circuit)'s can be integrated horizontally or vertically. Horizontal integration approach is, however, more immune to parasitic and more universally applicable. In this paper, a structural modeling, fabrication and characterization of PIN photodiodes which can be used in the horizontal integration are performed. For device modeling, we build a transmission line model from 2-D device simulation, from which lumped model parameters are extracted. The speed limits of the PIN photodiodes can also be calculated under various structural conditions from the model. Thus optimum design of horizontally integrated PIN photodiodes for high speed operation are possible. Such InGaAs/InP PIN photodiodes for long-wavelength communications are fabricated using pit etch, epi growth, planarization, diffusion and metallization processes. Planarization process using both RIE and wet etching and diffusion process using evaporated Zn$_{3}P_{2}$ film are developed. Characterization of the fabricated devices is performed through C-V and I-V measurements. At a reserve bias of 10V, the dark current is less than 5nA and capacitance is about 0.4pF. The calculated bandwidth using the measured series resistance and capacitance is about 4.23GHz.

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Development of Pressure Monitoring System and Pressure Changes during Kimchi Fermentation (김치발효 중 가스압력 변화와 압력측정시스템의 개발)

  • Lee, Young-Jin;Chun, Jae-Kun
    • Korean Journal of Food Science and Technology
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    • v.22 no.6
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    • pp.686-689
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    • 1990
  • For the monitoring of kimchi fermentation states, pressure detecting sensor and monitoring device were designed and fabricated. The system was consisted of an air tight fermenting tube(31.5 ml), strain gauge type pressure sensor and signal processing device built with operational amplifier and A/D converter, and interfaced to personal computer. Chiness cabbage kimchi was fermented in the plastic container($150{\times}220{\times}160mm$) at $25^{\circ}C\;and\;30^{\circ}C$. The fermentation was monitored with fermenting tubes containing kimchi. The pressure based kimchi fermentation curve was constructed and showed a typical kimchi curing curve having 2 stepwise pressure increasing pattern.

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A study on the Improvement of Ferroeletric Characteristics of PZT thin film for FRAM Device (FRAM 소자용 PZT박막의 강유전특성에 관한 연구)

  • Lee, B.S;Chung, M.Y.;Shin, P.K.;Lee, D.C.;Lee, S.H.;Kim, J.S.
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.1881-1883
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    • 2005
  • In this study, PZT thin films were fabricated using sol-gel Processing onto $Si/SiO_2/Ti/Pt$ substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}\;A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

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Long-Range Surface Plasmon-Polariton Wavelength Filter based on Asymmetric Double-Electrode Structure (비대칭 이중-금속 장거리 표면-플라즈몬 도파로를 이용한 파장필터)

  • Shim, Yu-Tae;Joo, Yang-Hyun;Song, Seok-Ho
    • Korean Journal of Optics and Photonics
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    • v.19 no.6
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    • pp.429-434
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    • 2008
  • We propose a wavelength filter based on long-range surface plasmon-polaritons (LR-SPP) supported by a asymmetric doubleelectrode LR-SPP structure. For the case of the asymmetric double-layered LR-SPP waveguide, LR-SPPs exist with a much broader range of index mismatches between core and clad materials. Thus, the asymmetric double-electrode LR-SPP waveguide is adequate to form a plasmonic band-gap device as we report in this paper by studying Bragg-reflection wavelength filter based on it. The structure for wavelength filter operating telecommunications wavelength is designed by using the method of line (MoL) and the transfer matrix method. The fabricated device shows a relatively high extinction ratio of 50 dB with a bandwidth of 2 nm, and the performance is very consistent with numerical simulations.

Detection Technique and Device of Series Arcing Phenomena (직렬아크현상의 검출기술 및 장치)

  • Ji, Hong-Keun;Jung, Kwang-Suk;Park, Dae-Won;Kil, Gyung-Suk;Seo, Dong-Hoan;Rhyu, Keel-Soo
    • Journal of Advanced Marine Engineering and Technology
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    • v.34 no.2
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    • pp.332-338
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    • 2010
  • Annually, electrical fires caused by arcing phenomena in power system rapidly increase as the use of more electric appliances, but there is no established method for the prevention of the accidents. With this background, this paper dealt with the experimental results on a series arc detection technique and a device for air conditioners. Series arcing phenomena that is generated in incomplete connection of air conditioners was simulated, and the frequency spectrum was analyzed. The Fast Fourier Transform (FFT) of the arc pulse showed that the dominant frequency components exist in ranges of 190 kHz~250 kHz and 900 kHz~1.6 MHz. An arc detection circuit with low cut off frequency of 170 kHz to attenuate 60 Hz by 170 dB and a signal discriminator were designed. Also, an algorithm which separate series arc signal from unwanted noises produced by switching operation, inverter, and surge was proposed. Application experiment was carried out on several types of air-conditioners by using the arc generator specified in UL1699, and the results showed the over 99 % accuracy.

High Performance ESD/Surge Protection Capability of Bidirectional Flip Chip Transient Voltage Suppression Diodes

  • Pharkphoumy, Sakhone;Khurelbaatar, Zagarzusem;Janardhanam, Valliedu;Choi, Chel-Jong;Shim, Kyu-Hwan;Daoheung, Daoheung;Bouangeun, Bouangeun;Choi, Sang-Sik;Cho, Deok-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.4
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    • pp.196-200
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    • 2016
  • We have developed new electrostatic discharge (ESD) protection devices with, bidirectional flip chip transient voltage suppression. The devices differ in their epitaxial (epi) layers, which were grown by reduced pressure chemical vapor deposition (RPCVD). Their ESD properties were characterized using current-voltage (I-V), capacitance-voltage (C-V) measurement, and ESD analysis, including IEC61000-4-2, surge, and transmission line pulse (TLP) methods. Two BD-FCTVS diodes consisting of either a thick (12 μm) or thin (6 μm), n-Si epi layer showed the same reverse voltage of 8 V, very small reverse current level, and symmetric I-V and C-V curves. The damage found near the corner of the metal pads indicates that the size and shape of the radius governs their failure modes. The BD-FCTVS device made with a thin n- epi layer showed better performance than that made with a thick one in terms of enhancement of the features of ESD robustness, reliability, and protection capability. Therefore, this works confirms that the optimization of device parameters in conjunction with the doping concentration and thickness of epi layers be used to achieve high performance ESD properties.

RF Energy Harvesting and Charging Circuits for Low Power Mobile Devices

  • Ahn, Chang-Jun;Kamio, Takeshi;Fujisaka, Hisato;Haeiwa, Kazuhisa
    • IEIE Transactions on Smart Processing and Computing
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    • v.3 no.4
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    • pp.221-225
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    • 2014
  • Low power RF devices, such as RFID and Zigbee, are important for ubiquitous sensing. These devices, however, are powered by portable energy sources, such as batteries, which limits their use. To mitigate this problem, this study developed RF energy harvesting with W-CDMA for a low power RF device. Diodes are required with a low turn on voltage because the diode threshold is larger than the received peak voltage of the rectifying antenna (rectenna). Therefore, a Schottky diode HSMS-286 was used. A prototype of RF energy harvesting device showed the maximum gain of 5.8dBi for the W-CDMA signal. The 16 patch antennas were manufactured with a 10 dielectric constant PTFT board. In low power RF devices, the transmitter requires a step-up voltage of 2.5~5V with up to 35 mA. To meet this requirement, the Texas Instruments TPS61220 was used as a low input voltage step-up converter. From the evaluated result, the achievable incident power of the rectenna at 926mV to operate Zigbee can be obtained within a distance of 12m.

Microstructure and Soft Magnetic Properties of Fe-6.5 wt.%Si Sheets Fabricated by Powder Hot Rolling

  • Kim, Myung Shin;Kwon, Do Hun;Hong, Won Sik;Kim, Hwi Jun
    • Journal of Powder Materials
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    • v.24 no.2
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    • pp.122-127
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    • 2017
  • Fe-6.5 wt.% Si alloys are widely known to have excellent soft magnetic properties such as high magnetic flux density, low coercivity, and low core loss at high frequency. In this work, disc-shaped preforms are prepared by spark plasma sintering at 1223 K after inert gas atomization of Fe-6.5 wt.% Si powders. Fe-6.5 wt.% Si sheets are rolled by a powder hot-rolling process without cracking, and their microstructure and soft magnetic properties are investigated. The microstructure and magnetic properties (saturation magnetization and core loss) of the hot-rolled Fe-6.5 wt.% Si sheets are examined by scanning electron microscopy, electron backscatter diffraction, vibration sample magnetometry, and AC B-H analysis. The Fe-6.5 wt.% Si sheet rolled at a total reduction ratio of 80% exhibits good soft magnetic properties such as a saturation magnetization of 1.74 T and core loss ($W_{5/1000}$) of 30.7 W/kg. This result is caused by an increase in the electrical resistivity resulting from an increased particle boundary density and the oxide layers between the primary particle boundaries.

Acceleration of computation speed for elastic wave simulation using a Graphic Processing Unit (그래픽 프로세서를 이용한 탄성파 수치모사의 계산속도 향상)

  • Nakata, Norimitsu;Tsuji, Takeshi;Matsuoka, Toshifumi
    • Geophysics and Geophysical Exploration
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    • v.14 no.1
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    • pp.98-104
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    • 2011
  • Numerical simulation in exploration geophysics provides important insights into subsurface wave propagation phenomena. Although elastic wave simulations take longer to compute than acoustic simulations, an elastic simulator can construct more realistic wavefields including shear components. Therefore, it is suitable for exploration of the responses of elastic bodies. To overcome the long duration of the calculations, we use a Graphic Processing Unit (GPU) to accelerate the elastic wave simulation. Because a GPU has many processors and a wide memory bandwidth, we can use it in a parallelised computing architecture. The GPU board used in this study is an NVIDIA Tesla C1060, which has 240 processors and a 102 GB/s memory bandwidth. Despite the availability of a parallel computing architecture (CUDA), developed by NVIDIA, we must optimise the usage of the different types of memory on the GPU device, and the sequence of calculations, to obtain a significant speedup of the computation. In this study, we simulate two- (2D) and threedimensional (3D) elastic wave propagation using the Finite-Difference Time-Domain (FDTD) method on GPUs. In the wave propagation simulation, we adopt the staggered-grid method, which is one of the conventional FD schemes, since this method can achieve sufficient accuracy for use in numerical modelling in geophysics. Our simulator optimises the usage of memory on the GPU device to reduce data access times, and uses faster memory as much as possible. This is a key factor in GPU computing. By using one GPU device and optimising its memory usage, we improved the computation time by more than 14 times in the 2D simulation, and over six times in the 3D simulation, compared with one CPU. Furthermore, by using three GPUs, we succeeded in accelerating the 3D simulation 10 times.