• Journal of the Optical Society of Korea
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• v.8 no.3
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• pp.132-136
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• 2004

Delayed luminescence of plant leaves was imaged by a 2-D cooled charge-coupled device. We report the delayed luminescence imaging of normal/injured leaves picked ami the leaves intact. The luminescent intensity was lower in leaf veins, scars and edge cut. The intensity of delayed luminescence from intact leaves was higher than that of picked leaves. These results indirectly support the argument that the delayed luminescence of a photosynthetic system is closely related to the electron transfer process of PSII in the thylakoid membrane.

• ETRI Journal
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• v.28 no.2
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• pp.205-215
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• 2006

Wireless data communication (WDC) services are increasingly penetrating the market. The two main alternative WDC technologies are wireless LAN and mobile Internet. Services based on these technologies display differences in quality attributes such as terminal device, data transmission speed, pricing scheme and so on. How consumers choose between these two alternatives will be determined by their preferences regarding such quality attributes. In turn, their preferences will affect the evolution of WDC services and related technologies. This study employs a conjoint analysis of consumer valuations of quality attributes of wireless LAN and mobile Internet services. Respondents rate hypothetical service alternatives featuring various combinations of quality attributes. By estimating consumer willingness to pay for the attributes of WDC services, the authors predict the evolution of WDC services and related technologies along various quality dimensions, make a comparison with the results of a previous study, and draw policy implications for national-and company-level R&D strategies.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.2
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• pp.24-34
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• 1979

In this paper characteristics of the Ebers-Mull , charge control and Linvill iumped models are reviewed. A 1%eery for systematically modeling solid state device by F.A Lind helm and D. J. Hamilton is discussed in detail. Nonlinear and linear modeds for the junction field effect transistor are derived from the systematic modeling theory. Computer program for the transient analysis is develooped and application of the program to the RC amplifler shows guod results.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.12-12
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• 2002

We present the new jaw tracking system that utilizes five degrees of freedom of head and lower jaw. The proposed method does not disturb the physiology because the system does not need to fix magnetic field sensors or clutch on the patient's body or mouth. The impact of this result goes beyond the conventional optical and magnetic tracking system of jaw movement [1][2]. Position accuracy within 1mm and reasonable cost is necessary for practical use of the jaw tracking system. (omitted)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.105-106
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• 2005

The impact ionization MOS (I-MOS) transistor with 50nm channel length is presented by using 2-D device simulator ISE-TCAD. The subthreshold slope cannot be steeper than kT/q since the subthreshold conduction is due to diffusion current. As MOSFETs are scaled down, this problem becomes significant and the subthreshold slope degrades which leads an increase in the off-current and off-state power dissipation. The I-MOS is based on a gated p-i-n structure and the subthreshold conduction is induced by impact ionization. The simulation results show that the subthreshold slope is 11.7 mV/dec and this indicates the I-MOS improves the switching speed and off-state characteristics.

• Current Applied Physics
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• v.18 no.11
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• pp.1415-1421
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• 2018

Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermediate silver source electrode has been demonstrated. The VOFET exhibits a high leakage current that induces an inversion polarity of its transistor behavior. Interestingly, a well-defined saturation current was observed in the linear scale of transfer characteristic. The VOFET operated with high-current density > $280mA/cm^2$ at $V_d=5V$. Overview potential of the fabricated device in display application is also presented. This preliminary work does open-up a new direction in VOFET fabrication and their application.

• Electronics and Telecommunications Trends
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• v.37 no.2
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• pp.21-29
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• 2022

Cosmic radiation environments having extremely high-energy particles and photons cause severe malfunctions of electrical components in space and terrestrial regions. In this study, we revisit basic knowledge on radiation effects in ICT electrical devices, such as single event effect, total ionizing dose, and displacement damage. To avoid such soft errors and system failures, we introduce essential technical approaches from the perspectives of materials, layouts, circuits, and systems, including current research trends. By considering several techniques and Space EEE part standards, we suggest possible directions that can invoke New Space Era technology.

• Journal of Magnetics
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• v.19 no.2
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• pp.126-129
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• 2014

We report the crystallographic and magnetic properties of $Ni_{0.3}Fe_{0.7}Ga_2S_4$ by means of X-ray diffractometer (XRD), a superconducting quantum interference device (SQUID) magnetometer, and a M$\ddot{o}$ssbauer spectroscopy. In particular, $Ni_{0.3}Fe_{0.7}Ga_2S_4$ was studied by M$\ddot{o}$ssbauer analysis for evidence of spin reorientation. The chalcogenide material $Ni_{0.3}Fe_{0.7}Ga_2S_4$ was fabricated by a direct reaction method. XRD analysis confirmed that $Ni_{0.3}Fe_{0.7}Ga_2S_4$ has a 2-dimension (2-D) triangular lattice structure, with space group P-3m1. The M$\ddot{o}$ssbauer spectra of $Ni_{0.3}Fe_{0.7}Ga_2S_4$ at spectra at various temperatures from 4.2 to 300 K showed that the spectrum at 4.2 K has a severely distorted 8-line shape, as spin liquid. Electric quadrupole splitting, $E_Q$ has anomalous two-points of temperature dependence of $E_Q$ curve as freezing temperature, $T_f=11K$, and N$\acute{e}$el temperature, $T_N=26K$. This suggests that there appears to be a slowly-fluctuating "spin gel" state between $T_f$ and $T_N$, caused by non-paramagnetic spin state below $T_N$. This comes from charge re-distribution due to spin-orientation above $T_f$, and $T_N$, due to the changing $E_Q$ at various temperatures. Isomer shift value ($0.7mm/s{\leq}{\delta}{\leq}0.9mm/s$) shows that the charge states are ferrous ($Fe^{2+}$), for all temperature range. The Debye temperature for the octahedral site was found to be ${\Theta}_D=260K$.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.2
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• pp.97-104
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• 2004

As a device that returns surplus energy, regenerated from trains to d.c. source, to a.c. system and reuses it, the thyristor Inverter has been widely used. Because the conventional thyristor inverter is a unidirectional phase-controlled device, it Is Impossible to control the power factor of its output. Moreover, harmonics emission is high and it needs to take a additional filter. In this paper, to solve the problems stated above, the inverter, which can control real and reactive power by adopting IGBT modules as switching elements and being controlled by means of space vector PWM, is developed. Considering high economical efficiency and reliability in order to apply to the system for commercial use, the developed inverter is equipped with fully digital control system and low pass filter, and reduces harmonics and has compact size. The detail description about the developed inverter is stated in various respects: design criteria, technical description, power circuits, control techniques, the developed system, test results, etc.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.1
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• pp.55-62
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• 2015

The electromagnetic force induced by an intense electric current pulse, which generates an electromagnetic field around the metal jet originating from a shaped charge, can disperse and scatter the high-speed metal jet. An electric device consisting of an RLC circuit applies an intense electric current pulse that flows in the circuit while the metal jet passes between two electrodes. In this study, the metal jet formation was simulated using the ALE technique in 2-D, and a 3-D finite element model was mapped using 2-D simulation results to induce the electric current directly. The deformed shapes of the metal jet and the electromagnetic force were calculated using a finite element analysis by inducing the electric current directly, and the major parameters of the intense electric current pulse for breaking up the metal jet were examined.