• Journal of Electrical Engineering and Technology
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• v.1 no.2
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• pp.263-267
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• 2006

A new thermal bimorph actuator for large out-of-plane displacement is designed, fabricated and tested. The deflecting beam is composed of polyimide, heater, and polyvinyl difluorides with tetrafluoroethylene (PVDF-TrFE). The large difference of coefficient of thermal expansion (CTE) of two polymer layers (polyimide and PVDF-TrFE) can generate a significant deflection with relatively small temperature rise. Compared to the most conventional micro actuators based on MEMS (micro-electro mechanical system) technology, a large displacement, over 1 mm at 20 mW, could be achieved. Additionally, we can achieve response time of 14.6 ms, resonance frequency of 12 Hz, and reliability ability of $10^5$ cycles. The proposed actuator can find applications where a large vertical displacement is needed while maintaining compact overall device size, such as a micro zooming lens, micro mirror, micro valve and optical application.

• Journal of the Optical Society of Korea
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• v.17 no.2
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• pp.172-176
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• 2013

For demonstrating widely tunable external cavity lasers operating for near-infrared (NIR) wavelength, a flexible polymer waveguide with an imbedded Bragg grating is incorporated. Due to the superior flexibility of the polymer material, the reflection wavelength of the Bragg grating is widely tunable by imposing tensile and compressive strains on the flexible Bragg grating. A third-order Bragg grating is formed on the device for facilitating the fabrication method. With a superluminescent laser diode as a gain medium of ECL, the tunable laser exhibited output power of -3 dBm and a tuning range of 32 nm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.10
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• pp.1-8
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• 2002

C- V method is a means to determine the effective channel length for miniaturized MOSFET's. This method achieves L$_{eff}$ by extracting a unique channel length independent extrinsic overlap length($\Delta$L) at a critical gate bias point. In this paper, we conducted an experiment on two different C-V methods. L$_{eff}$ extracted from experiment is compared with L$_{eff}$ simulated from a two-dimensional (2-D) device simulator, and the accuracy of C-V method for L$_{eff}$ extraction is analyzed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.191-197
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• 2016

In this paper, we investigated the hotcarrier injection (HCI) mechanism, one of the most important reliability issues, in 10 nm node Input/Output (I/O) bulk FinFET. The FinFET has much intensive HCI damage in Fin-bottom region, while the HCI damage for planar device has relatively uniform behavior. The local damage behavior in the FinFET is due to the geometrical characteristics. Also, the HCI is significantly affected by doping profile, which could change the worst HCI bias condition. This work suggested comprehensive understanding of HCI mechanisms and the guideline of doping profile in 10 nm node I/O bulk FinFET.

• Journal of environmental and Sanitary engineering
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• v.15 no.2
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• pp.102-111
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• 2000

As IR-sensor for detecting pollution material, the iron silicide has a fit band gap, high physicochemical stability at high temperature and good acid resistance. The growing film was formed with the Fe-Si bond and the organic compound because plasma resolved the injected precursors into various active species. In the Raman scattering spectrum, the Fe-Si vibration mode showed at 250 {TEX}$cm^{-1}${/TEX}. The FT-IR peak indicated that the various organic compounds were deposited on the films. The iron silicide was epitaxially grown to β-phase by the high energy of plasma. The lattice structure of films had [220]/[202] and [115]. The thickness of the films increased with the flow rate of silane. But rf-power increased with decreasing the thickness. The optical gap energy and the band gap were shown about 3.8 eV and 1.182∼1.194 eV. The band gap linearly increased and the formula was below: {TEX}$E_g^{dir}${/TEX}= 8.611×{TEX}$10^{-3}N_{D}${/TEX}＋1.1775

• Current Optics and Photonics
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• v.1 no.3
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• pp.239-246
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• 2017

A compact plasmonic switching scheme, based on the phase change of a thin-film chalcogenide material ($Ge_2Sb_2Te_5$), is proposed and numerically investigated at optical-communication wavelengths. Surface plasmon polariton modal analysis is conducted for various thicknesses of dielectric and phase-change material layers, and the optimized condition is induced by finding the region of interest that shows a high extinction ratio of surface plasmon polariton modes before and after the phase transition. Full electromagnetic simulations show that multiple reflections inside the active region may conditionally increase the overall efficiency of the on/off ratio at a specific length of the active region. However, it is shown that the optimized geometrical condition, which shows generally large on/off ratio for any length of active region, can be distinguished by observing the multiple-reflection characteristic inside the active region. The proposed scheme shows an on/off switching ratio greater than 30 dB for a length of a few micrometers, which can be potentially applied to integrated active plasmonic systems.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.53-57
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• 2012

This paper is for accurately simulating the breakdown of MHEMTs with an InP-etchstop layer. 2D-Hydrodynamic simulation parameters are investigated and calibrated for the InP-epitaxy layer. With these calibrated parameters, simulations are performed and analyzed for the breakdown of devices with an InP-etchstop layer. In the paper, the impact-ionization coefficients, the mobility degradation due to doping concentration, and the saturation velocity for InP-epitaxy layer are newly calibrated for more accurate breakdown simulation.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.2
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• pp.230-234
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• 1996

A new trenched Hybrid Schottky INjection Field Effect Transistor (HSINFET) is proposed and verified by 2-D semiconductor device simulation. The feature of the proposed structure is that the hybrid Schottky injector is implemented at the trench sidewall and p-n junction injector at the upper sidewall and bottom of a trench. Two-dimensional simulation has been performed to compare the new HSINFET with the SINFET, conventional HSINFET and lateral insulated gate bipolar transistor(LIGBT). The numerical results shows that the current handling capability of the proposed HSINFET is significantly increased without sacrificing turn-off characteristics. The proposed HSINFET exhibits higher latch-up current density and much faster switching speed than the lateral IGBT. The forward voltage drop of the proposed HSINFET is 0.4 V lower than that of the conventional HSINFET and the turn-off time of the trenched HSINFET is much smaller than that of LIGBT.

• Proceedings of the KIEE Conference
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• 1996.07b
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• pp.1380-1382
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• 1996

In this paper, a motion estimation module is made with ADSP-21020 based on MPEG-2 which is an international standard for moving picture compression. And, the block matching algorithm used as motion estimation method is easy for an hardware implementation. The ADSP-21020 of Analog Device is used for a main control processor. We used three block matching method (exhaustive search method, 2D-logarithmic search method, three step search method) for software simulation and implemented the three step search method to hardware. For the test of the estimation module, we used ping pong image sequences and mobile and calendar image sequences.

• Proceedings of the Korea Multimedia Society Conference
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• 2004.05a
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• pp.370-373
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• 2004

The rapid proliferation of mobile device such as PDA allows users more ubiquitous access to multimedia information. The user mobility provides users a uniform vision of their preferred working environment independently of their current points of attachment. Supporting the user mobility requires the Player capable of efficiently presenting the multimedia contents. MPEC-4 provides not only the description for coding audio and video (as its predecessors MPEG-1 and MPEG-2), but also for coding images, animations, interactivity and protecting content. With MPEG-4, we present interactive media using multiple objects - audio, video, image, 2D geometry, and text - in a single format. Therefore we propose the MPEC-4 Player for PDA. The proposed MPEG-4 Player for PDA supports mobility, portability and personality.