• Title/Summary/Keyword: Device to Device (D2D)

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3D Numerical Investigation on Reservoir System for an Overtopping Wave Energy Convertor

  • Jin, Jiyuan;Liu, Zhen;Hong, Key-Yong;Hyun, Beom-Soo
    • Journal of Navigation and Port Research
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    • v.36 no.2
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    • pp.97-103
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    • 2012
  • Overtopping Wave Energy Convertor (OWEC) is an offshore wave energy convertor, which comprises the circular ramp and reservoir. It collects the overtopped waves and converting water pressure head into electric power through the hydro-turbines installed in the vertical duct, which is fixed in the sea bed. The performance of OWEC can be represented by the operating water heads of the device, which depends on the amount of the wave water overtopping into the reservoir. In the present paper, the reservoir with the duct connecting to the sea water are studied in the 3D numerical wave tank, which has been developed based on the computational fluid dynamics software Fluent 6.3. Both the overtopping motion and the discharges of the reservoir are investigated together, and several shape parameters and incident wave conditions are varied to demonstrate their effects on the performance of OWEC.

Fairing Design of Commercial Vehicles for Drag Force Reduction (항력 저감을 위한 지상차량용 페어링 형상설계)

  • Lee, Yonggyu;Park, Hyunbum
    • Journal of Aerospace System Engineering
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    • v.16 no.2
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    • pp.25-32
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    • 2022
  • A cab roof fairing is a device that reduces the drag coefficient of a commercial vehicle, by controlling the resistance of flow separation occurring in the front when the commercial vehicle travels. Commercial vehicles are designed to facilitate aerodynamic resistance that cannot be avoided from the driving direction of the vehicle, because they must structurally load containers in the rear. For this reason, it is closely related to oil costs and environmental pollutants. In this study, the 3D fairing shape was designed based on the Rankine half body theory, and the design results were verified through aerodynamic analysis.

Effect of High-Temperature Post-Oxidation Annealing in Diluted Nitric Oxide Gas on the SiO2/4H-SiC Interface (4H-SiC와 산화막 계면에 대한 혼합된 일산화질소 가스를 이용한 산화 후속 열처리 효과)

  • In kyu Kim;Jeong Hyun Moon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.1
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    • pp.101-105
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    • 2024
  • 4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) have been developed to achieve lower specific-on-resistance (Ron,sp), and the gate oxides have been thermally grown. The poor channel mobility resulting from the high interface trap density (Dit) at the SiO2/4H-SiC interface significantly affects the higher switching loss of the power device. Therefore, the development of novel fabrication processes to enhance the quality of the SiO2/4H-SiC interface is required. In this paper, NO post-oxidation annealing (POA) by using the conditions of N2 diluted NO at a high temperature (1,300℃) is proposed to reduce the high interface trap density resulting from thermal oxidation. The NO POA is carried out in various NO ambient (0, 10, 50, and 100% NO mixed with 100, 90, 50, and 0% of high purity N2 gas to achieve the optimized condition while maintaining a high temperature (1,300℃). To confirm the optimized condition of the NO POA, measuring capacitance-voltage (C-V) and current-voltage (I-V), and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) are employed. It is confirmed that the POA condition of 50% NO at 1,300℃ facilitates the equilibrium state of both the oxidation and nitridation at the SiO2/4H-SiC interface, thereby reducing the Dit.

K-band MMIC Oscillator Design Using the PHEMT (PHEMT소자를 이용한 K-band MMIC 발진 설계)

  • 이지형;채연식;조희철;윤용순;이진구
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.88-91
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    • 2000
  • An MMIC oscillator operating at the 24.55 GHz has been designed using 0.2 ${\mu}{\textrm}{m}$AlGaAs/InGaAs/GaAs Pseudomorphic HEMT technology. The active device used in the oscillator design has a 0.2 ${\mu}{\textrm}{m}$ gate length PHEMT with 4$\times$80 ${\mu}{\textrm}{m}$ gate width. We obtained 4.08 dB of S$_{21}$ gain and 317 mS/mm of transconductance, and extrapolated unit current gain cut-off frequency (f$_{T}$) and maximum oscillation frequency (fmax) were 62 GHz and 120 GHz, respectively. The circuit are based on a series feedback and negative resistance topology. Microstrip line open stub is used to terminating. The oscillator circuits has designed for delivering maximum power to load and conjugated matching. The simulated small signal negative resistance was 50 Ω. We obtained 1.002 of loop gain and 0.0005$^{\circ}$angle from the simulation by HP libra 6.1. The layout for oscillator is 1.2$\times$1.8 $\textrm{mm}^2$.>.

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Highly efficient phosphorescent polymer OLEDs fabricated by screen printing

  • Lee, D.H.;Choi, J.S.;Cho, S.M.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.694-697
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    • 2007
  • We demonstrate the use of screen printing in the fabrication of highly efficient phosphorescent polymer organic-light-emitting devices (OLEDs) based on a green-emitting $Ir(ppy)_3$ and a host polymer PVK. We incorporate PBD in the polymer host as an electron-transporting dopant and ${\alpha}-NPD$ as a hole transporting dopant. The best screen printed single-layer device exhibits very high peak luminous efficiency of 63 cd/A at a relatively high operating voltage of 17.1 V at the luminance of $650\;cd/m^2$. We observed the highest luminance of $21,000\;Cd/m^2$ at 35V. Due to the high operating voltage, despite of the high peak luminous efficiency the peak power efficiency was found to be 12.2 lm/W at the luminance of $470\;cd/m^2$ (15.9 V).

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Electromigration Characteristics in PSG/SiO$_2$ Passivated Al-l%Si Thin Film Interconnections

  • Kim, Jin-Young
    • Journal of Korean Vacuum Science & Technology
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    • v.7 no.2
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    • pp.39-44
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    • 2003
  • Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to a quarter micron and below, which results in the high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in PSG(phosphosilicate glass)/SiO$_2$ passivated Al-l%Si thin film interconnections. Straight line patterns, wide and narrow link type patterns, and meander type patterns, etc. were fabricated by a standard photholithography process. The main results are as follows. The current crowding effects result in the decrease of the lifetime in thin film interconnections. The electric field effects accelerate the decrease of lifetime in the double-layered thin film interconnections. The lifetime of interconnections also depends upon the current conditions of P.D.C.(pulsed direct current) frequencies applied at the same duty factor.

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Synthesis and Properties of Novel T-type Nonlinear Optical Polyurethane Containing Tricyanovinylthienyl Group with Enhanced Thermal Stability of Dipole Alignment

  • Cho, You-Jin;Kim, Mi-Sung;Lee, Ju-Yeon
    • Bulletin of the Korean Chemical Society
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    • v.32 no.2
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    • pp.424-430
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    • 2011
  • A novel T-type polyurethane 7 containing 1-(2,5-dioxyphenyl)-2-(5-(1,2,2-tricyanovinyl)-2-thienyl)ethenes as NLO chromophores, which constitute part of the polymer backbone, was prepared. Polyurethane 7 is soluble in common organic solvents such as DMF and DMSO. It shows a thermal stability up to $270^{\circ}C$ from TGA thermogram with $T_g$ value obtained from DSC thermogram near $155^{\circ}C$. The second harmonic generation (SHG) coefficient ($d_{33}$) of poled polymer film at 1560 nm fundamental wavelength is $3.56{\times}10^{-9}$ esu. Polymer 7 exhibits a thermal stability even at $5^{\circ}C$ higher than $T_g$, and no significant SHG decay is observed below $160^{\circ}C$, which is acceptable for nonlinear optical device applications.

Epitaxial Growth of Bi2Se3 on a Metal Substrate

  • Jeon, Jeong-Heum;Jang, Won-Jun;Yun, Jong-Geon;Gang, Se-Jong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.306-306
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    • 2011
  • Three dimensional(3D) topological insulators(TIs) of Bi binary alloys are characterized by a bulk energy gap with strong spin-orbit coupling and metallic surface states protected by time-reversal symmetry. It was reported that film forms of such materials were advantageous over bulk forms due to less defect density and better crystallinity. So far, the films have been prepared on several substrates including semiconductors and graphene. But, there were no studies on metal substrates. For electronic transport experiments and device applications, it is necessary to know epitaxial relation between TIs and metal electrodes. In this study, Atomically flat films of Bi2Se3 were grown on a Au(111) metal substrate by in-situ molecular beam epitaxy. Using home-built scanning tunneling microscope, we observed hexagonal atomic structures which corresponded to the outmost selenium atomic layer of Bi2Se3. Triangular-shaped defects known as Selenium vacancy were also found.

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Study on Improved Switching Characteristics of LIGBT by the Trap Injection (Trap 주입에 의한 LIGBT의 스위칭 특성 향상에 관한 연구)

  • 추교혁;강이구;성만영
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.2
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    • pp.120-124
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    • 2000
  • In this paper, the effects of trap distribution on switching characteristis of a lateral insulated gate bipolar transistor (LIGBT) are investigated. The simulations are performed in order to to analyze the effect of the positon, width and concentration of trap distribution model with a reduced minority carrier lifetime using 2D device simulator MEDICI. The turn off time for the proposed LIGBT model A with the trap injection is 0.8$mutextrm{s}$. These results indicate the improvement of about 2 times compared with the conventional LIGBT. It is shown that the trap distribution model is very effective to reduce the turn-off time with a little increasing of on-state voltage drop.

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Evaluation on Usefulness of Abdomen and Chest Motion Control Device (ABCHES) for the Tumor with a Large Respiratory Motion in Radiotherapy (호흡으로 인한 움직임이 큰 종양의 방사선치료 시 Abdomen and Chest Motion Control Device (ABCHES)의 유용성 평가)

  • Cho, Yoon-Jin;Jeon, Mi-Jin;Shin, Dong-Bong;Kim, Jong-Dae;Kim, Sei-Joon;Ha, Jin-Sook;Im, Jung-Ho;Lee, Ik-Jae
    • The Journal of Korean Society for Radiation Therapy
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    • v.24 no.2
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    • pp.85-93
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    • 2012
  • Purpose: It is essential to minimize the respiratory-induced motion of involved organs in the Tomotherapy for tumor located in the chest and abdominal region. However, the application of breathing control system to Tomotherapy is limited. This study was aimed to investigate the possible application of the ABCHES system and its efficacy as a means of breathing control in the tomotherapy treatment. Materials and Methods: Five subjects who were treated with a Hi-Art Tomotherapy system for lung, liver, gallbladder and pancreatic tumors. All patients undertook trained on two breathing methodes using an ABCHES, free breathing methode and shallow breathing methode. When the patients could carry out the breathing control, 4D-CT scan was a total of 10 4D tomographic images were acquired. A radiologist resident manually drew the tumor region, including surrounding nomal organs, on each of CT images at the inhalation phase, the exhalation phase and the 40% phase (mid-inhalation) and average CT image. Those CT images were then exported to the Tomotherapy planning station. Data exported from the Tomotherapy planning station was analyzed to quantify characteristics of dose-volume histograms and motion of tumors. Organ motions under free breathing and shallow breathing were examined six directions, respectively. Radiation exposure to the surrounding organs were also measured and compared. Results: Organ motion is in the six directions with more than a 5 mm displacement. A total of 12 Organ motions occurred during free breathing while organ motions decreased to 2 times during shallow breathing under the use of Abches. Based on the quantitative analysis of the dose-volume histograms shallow breathing showed lower resulting values, compared to free breathing, in every measure. That is, treatment volume, the dose of radiation to the tumor and two surrounding normal organs (mean doses), the volume of healthy tissue exposed to radiation were lower at the shallow breathing state. Conclusion: This study proposes that the use of ABCHES is effective for the Tomotherapy treatment as it makes shortness of breathing easy for patients. Respiratory-induced tumor motion is minimized, and radiation exposure to surrounding normal tissues is also reduced as a result.

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