• Title/Summary/Keyword: Device performance

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Fabrication of an Automatic Color-Tuned System with Flexibility Using a Dry Deposited Photoanode

  • Choi, Dahyun;Park, Yoonchan;Lee, Minji;Kim, Kwangmin;Choi, Jung-Oh;Lee, Caroline Sunyong
    • International Journal of Precision Engineering and Manufacturing-Green Technology
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    • v.5 no.5
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    • pp.643-650
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    • 2018
  • A self-powered electrochromic device was fabricated on an indium tin oxide-polyethylene naphthalate flexible substrate using a dye-sensitized solar cell (DSSC) as a self-harvesting source; the electrochromic device was naturally bleached and operated under outdoor light conditions. The color of the organic electrochromic polymer, poly(3,4-ethylenedioxythiophene) polystyrene sulfonate, was shifted from pale blue to deep blue with an antimony tin oxide film as a charge-balanced material. Electrochromic performance was enhanced by secondary doping using dimethyl sulfoxide. As a result, the device showed stable switching behavior with a high transmittance change difference of 40% at its specific wavelength of 630 nm for 6 hrs. To improve the efficiency of the solar cell, 1.0 wt.% of Ag NWs in the photoanode was applied to the $TiO_2$ photoanode. It resulted in an efficiency of 3.3%, leading to an operating voltage of 0.7 V under xenon lamp conditions. As a result, we built a standalone self-harvesting electrochromic system with the performance of transmittance switching of 29% at 630 nm, by connecting with two solar cells in a device. Thus, a self-harvesting and flexible device was fabricated to operate automatically under the irradiated/dark conditions.

Application of Seismic Base Isolation With Anti-Uplift Device for Arch Structure (아치 구조물의 지진응답 제어를 위한 들림방지 면진장치의 적용)

  • Kim, Gee-Cheol;Lee, Joon-Ho
    • Journal of Korean Association for Spatial Structures
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    • v.20 no.4
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    • pp.169-176
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    • 2020
  • When an unexpected excessive seismic load is applied to the base isolation of arch structure, the seismic displacement of the base isolation may be very large beyond the limit displacement of base isolation. These excessive displacement of the base isolation causes a large displacement in the upper structure and large displacement of upper structure causes structural damage. Therefore, in order to limit the seismic displacement response of the base isolation, it is necessary to install an additional device such as an anti-uplift device to the base isolation. In this study, the installation direction of the base isolation and the control performance of the base isolation installed anti-uplift device were investigated. The installation direction of the base isolation of the arch structure is determined by considering the horizontal and vertical reaction forces of the arch structure. In addition, the separation distance of the anti-uplift device is determined in consideration of the design displacement of the base isolation and the displacement of the arch structure.

Development of Automatic Sacking Device for the Combine Harvester (콤바인 곡물 포대 자동이송장치 개발)

  • 김철수;김기동;조기현;이정택;김진현
    • Journal of Biosystems Engineering
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    • v.28 no.6
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    • pp.491-496
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    • 2003
  • This study was performed to develop an automatic sacking device for the combine harvester which was constituted input/output signal system, controller, delivery device, shooting device, pneumatic system for shooting operation, vibration device fer sacking operation and a new developed sacking bag. A new developed automatic sacking device and new sacking bag were operated well in general. And they were possible to develop a new combine to reduce of fatigue, to improve the safety and the performance. In developed device, The optimum delivery velocity of conveyer for sacking was 5.16 mm/sec. In sacking device, sacking discharge was shown 94% with non-vibration condition and sacking discharge was shown 99% with vibration condition, respectively.

Metal Insulator Gate Geometric HEMT: Novel Attributes and Design Consideration for High Speed Analog Applications

  • Gupta, Ritesh;Kaur, Ravneet;Aggarwal, Sandeep Kr;Gupta, Mridula;Gupta, R.S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.1
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    • pp.66-77
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    • 2010
  • Improvement in breakdown voltage ($BV_{ds}$) and speed of the device are the key issues among the researchers for enhancing the performance of HEMT. Increased speed of the device aspires for shortened gate length ($L_g$), but due to lithographic limitation, shortening $L_g$ below sub-micrometer requires the inclusion of various metal-insulator geometries like T-gate onto the conventional architecture. It has been observed that the speed of the device can be enhanced by minimizing the effect of upper gate electrode on device characteristics, whereas increase in the $BV_{ds}$ of the device can be achieved by considering the finite effect of the upper gate electrode. Further, improvement in $BV_{ds}$ can be obtained by applying field plates, especially at the drain side. The important parameters affecting $BV_{ds}$ and cut-off frequency ($f_T$) of the device are the length, thickness, position and shape of metal-insulator geometry. In this context, intensive simulation work with analytical analysis has been carried out to study the effect of variation in length, thickness and position of the insulator under the gate for various metal-insulator gate geometries like T-gate, $\Gamma$-gate, Step-gate etc., to anticipate superior device performance in conventional HEMT structure.

Oil Carrier, Development of on Optimized Anti-Splash Device Model for COT Vent Pipe (유조선, COT Vent Pipe용 Anti-Splash Device 최적 모델 개발)

  • Na, Ok-kyun;Jeon, Young-Soo;Park, Sin-kil;Kim, Jong-Ho
    • Special Issue of the Society of Naval Architects of Korea
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    • 2015.09a
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    • pp.50-55
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    • 2015
  • Application of newly conceptualized Anti-Splash Devices designed for COT vent pipes were studied on a P/V valve located on the upper deck of an oil carrier vessel. Anti-Splash devices are used in the shipbuilding industry in order to avoid oil overflow and spray accidents caused by excess pressure and vacuum condition in the cargo oil tanks. These conditions are caused by the transverse and longitudinal sloshing forces that arise from ship motion during sea voyages. The main issue with existing Anti-Splash device model is flux at the outlet of the Anti-Splash Device, and so, new conceptual models for the Anti-Splash device were developed and compared to existing Anti-Splash device model using CFD analysis. Transient analysis was used to capture the flow and velocity of each model and a comparative analysis was performed between old and new-concept models. This data was used to determine the optimal design parameters in order to develop an optimized Anti-Splash Device. A Factory acceptance test was performed on the new-concept models in order to verify the performance and efficiency against their design requirements and other criterion. The final step performed was to apply the optimized Anti-Splash Device models for COT vent pipes to an actual vessel and verify performance through a seawater cargo operation during a sea voyage as per the ship owner's request. The patent for the aforementioned device was obtained by the Korean Intellectual property Office dated Dec. 18th,2014.

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A study on the performance test and acoustic design of interference type noise reduction device for railway noise (철도소음 저감을 위한 간섭형 방음장치 음향 설계 및 성능시험에 관한 연구)

  • Cho, Jun-Ho;Koh, Hyo-In
    • Journal of Environmental Impact Assessment
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    • v.20 no.6
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    • pp.787-795
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    • 2011
  • Noise barrier is generally used with welding of joint rail for railway noise reduction in our country. But the noise barrier for high speed railway has weak point in low frequencies about 315Hz band. In this study, For developing of Interference-type Noise Reduction Device(INRD), acoustic analysis were performed using commercial software. For verifying the improvement in the noise reduction, noise measurement before and after installing of INRD were performed in Anechoic Chamber. From these acoustic analysis and noise measurement, it was known that developed INRD has a good noise reduction performance and can be used efficiently with conventional noise barrier.

Submicron CMOSFET에서 기판 방향에 대한 소자 성능 의존성 분석

  • Park, Ye-Ji;Han, In-Sik;Park, Sang-Uk;Gwon, Hyeok-Min;Bok, Jeong-Deuk;Park, Byeong-Seok;Lee, Hui-Deok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.7-7
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    • 2009
  • In this paper, we investigated the dependence of HCI (Hot Carrier Immunity) degradation and device performance on channel orientation in sub-micron PMOSFET. Although device performance ($I_{D.sat}$ vs. $I_{Off}$) was improved as the transistor angle increased HC immunity was degraded. Therefore, consideration of reliability characteristics as well as dc device performance is highly necessary in channel stress engineering of next generation CMOSFETs.

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Optimization of Heat Pump Systems (열펌프의 성능 최적화에 관한 연구)

  • Choi, Jong-Min;Yun, Rin;Kim, Yong-Chan
    • New & Renewable Energy
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    • v.3 no.4
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    • pp.22-30
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    • 2007
  • An expansion device plays an important role in optimizing the heat pumps by controlling refrigerant flow and balancing the system pressures. Conventional expansion devices are being gradually replaced with electronic expansion valves due to increasing focus on comfort, energy conservation, and application of a variable speed compressor. In addition, the amount of refrigerant charge in a heat pump is another primary parameter influencing system performance. In this study, the flow characteristics of the expansion devices are analyzed, and the effects of refrigerant charge amount on the performance of the heat pump and the variation of compressor speed are investigated at various operating conditions. Mass flow rate through capillary tube, short tube orifice, and EEV was strongly dependent on the upstream pressure and subcooling. The heat pump system is very sensitive with a variation of refrigerant charge amount. The performance of it can be optimized by adjusting the flow rate through expansion device to maintain a constant superheat at all test conditions.

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The Effect of Quinolate Metal Complex as an Electron Injection Layers on the Performance of Organic Light Emitting Devices (유기 전기 발광 소자의 전자 주입층)

  • Choi, Kyung-Hoon;Sohn, Byung-Chung;Kim, Young-Kwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.980-983
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    • 2002
  • We investigated the effect of quinolate metal complex layer as an electron injection layer on the performance of OLEDs and optimized the device efficiency by varying from 0.5 to 10nm thickness of Liq layer. OLED with a structure of indium tin oxide/$\alpha$-napthylphenylbiphenyl(NPB,40nm)/tris-(8-hydroxyquinoline)aluminum(Alq3, 50nm)/Aluminum(150nm) were fabricated in sequence. The device with 1nm Quinolate metal complex layer showed significant enhancement of the device performance.

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Influence of slot width on the performance of multi-stage overtopping wave energy converters

  • Jungrungruengtaworn, Sirirat;Hyun, Beom-Soo
    • International Journal of Naval Architecture and Ocean Engineering
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    • v.9 no.6
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    • pp.668-676
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    • 2017
  • A two-dimensional numerical investigation is performed to study the influence of slot width of multi-stage stationary floating overtopping wave energy devices on overtopping flow rate and performance. The hydraulic efficiency based on captured crest energy of different device layouts is compared with that of single-stage device to determine the effect of the geometrical design. The results show optimal trends giving a huge increase in overtopping energy. Plots of efficiency versus the relative slot width show that, for multi-stage devices, the greatest hydraulic efficiency is achieved at an intermediate value of the variable within the parametric range considered, relative slot width of 0.15 and 0.2 depending on design layouts. Moreover, an application of adaptive slot width of multi-stage device is investigated. The numerical results show that the overall hydraulic efficiency of non-adaptive and adaptive slot devices are approximately on par. The effect of adaptive slot width on performance can be negligible.